IS43TR16256AL-125KBL vs K4B4G1646D-BHMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc dan K4B4G1646D-BHMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IS43TR16256AL-125KBL | K4B4G1646D-BHMA |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SDRAM - DDR3L | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Antaramuka | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V (backward compatible to 1.5V) | 1.35 V (1.283 V to 1.45 V) |
| Kemasan | 96-TWBGA (9x13mm) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | 0°C ~ 95°C | -40°C to +95°C (TC) |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| Kadar Data | 1600 Mbps | 1866 Mbps |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Number of Terminals | 96 | 96 |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Latensi CAS | — | 13 (at 1866 Mbps) |
| Burst Length | — | 8 and 4 |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |
| Refresh Mode | — | Auto and Self Refresh |