ISC015N06NM5LF2ATMA1 vs IQEH50NE2LM7UCGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifInfineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC015N06NM5LF2ATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | — |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8 FL (5x6 mm) | PG-WHTFN-9-1 (surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |