K4B4G1646E-BYK0 vs K4B4G1646D-BMK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics dan K4B4G1646D-BMK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | — |
| Kadar Data | DDR3-1600 (800 MHz) | 1600 Mbps |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96FBGA (TFBGA) |
| Suhu Operasi | 0°C to +95°C (TC) | -40°C to 95°C |
| Latensi CAS | 11 (CL-tRCD-tRP) | — |
| Burst Length | 8 (fixed), 4 (burst chop) | — |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Speed Grade | — | 1600 Mbps (PC3L-12800) |
| Voltage | — | 1.35 V |
| Die Version | — | D-die |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Number of Functions | — | 1 |