K6X0808C1D-BF70T vs K6X0808C1D-BF55 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70T disebabkan oleh Samsung Electronics dan K6X0808C1D-BF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Aktif
Samsung Electronics
K6X0808C1D-BF55 K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 ✓ Aktif

Pengandingan Spesifikasi

Parametr K6X0808C1D-BF70T K6X0808C1D-BF55
Merek Samsung Electronics Samsung Electronics
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan SRAM - Asynchronous Asynchronous SRAM
Saiz Ingatan 256 Kbit 256 Kbit
Memory Organization 32K x 8 —
Memory Interface Parallel —
Access Time 70 ns 55 ns
Write Cycle Time - Word, Page 70 ns —
Voltage - Supply 4.5 V to 5.5 V —
Suhu Operasi -40C to +85C (TA) [DATA_NEEDED: operating temperature range]
Kemasan 28-SOP 28-SOP
Jenis Pemasangan Surface Mount Surface Mount
Process Technology CMOS —
Address Bus Width 15 bit (A0-A14) —
Lebar Bus Data 8 bit (I/O0-I/O7) —
Control Signals CE, OE, WE CE, OE, WE
I/O Compatibility TTL compatible —
Refresh Requirement None (fully static operation) —
Status RoHS Compliant unknown
Organisasi — 32K x 8
Antaramuka — Parallel
Tegangan Pemberi Arus — 5 V
Technology — CMOS
Standby Current — [DATA_NEEDED: standby current]
Operating Current — [DATA_NEEDED: operating current]
Memory Format — SRAM
Clock Frequency — N/A (asynchronous)
Refresh — Not required (static memory)

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