K9PKGY8S7M-CCK0 vs K9PRGY8S7M-CCK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9PKGY8S7M-CCK0 disebabkan oleh Samsung Electronics dan K9PRGY8S7M-CCK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ AktifPengandingan Spesifikasi
| Parametr | K9PKGY8S7M-CCK0 | K9PRGY8S7M-CCK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Capacity | 128 Gb (16 GB) | — |
| Jenis Ingatan | NAND Flash | NAND Flash |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Kemasan | BGA | BGA (surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | [DATA_NEEDED: interface type] |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | Lead free / RoHS compliant | Lead free / RoHS compliant |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Density | — | [DATA_NEEDED: density] |
| Memory Bus Width | — | [DATA_NEEDED: bus width] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Ball Count | — | [DATA_NEEDED: BGA ball count] |