MPXAZ4115AC6U vs MPXA6115AC6U Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MPXAZ4115AC6U disebabkan oleh NXP Semiconductors dan MPXA6115AC6U disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MPXAZ4115AC6U MPXAZ4115AC6U - 15-115kPa Absolute Pressure Sensor | NXP

MPXAZ4115AC6U - 15-115kPa Absolute Pressure Sensor | NXP

MPXAZ4115AC6U ✓ Aktif
NXP Semiconductors
MPXA6115AC6U MPXA6115AC6U - 15-115 kPa Absolute Pressure Sensor | NXP

MPXA6115AC6U - 15-115 kPa Absolute Pressure Sensor | NXP

MPXA6115AC6U ✓ Aktif

Pengandingan Spesifikasi

Parametr MPXAZ4115AC6U MPXA6115AC6U
Merek NXP Semiconductors NXP Semiconductors
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Aktif Aktif
Pressure Type Absolute Absolute
Pressure Range 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) —
Jenis Output Analog Voltage Analog, ratiometric
Gambaran Tegangan Output 0.2 V to 4.8 V 0.2 V to 4.7 V (at 5 V supply)
Tegangan Pemberi Arus 4.85 V to 5.35 V (5 V typical) 4.75 V to 5.25 V
Accuracy ±1.5% ±1.5% (0°C to +85°C)
Port Style Top port, Male - 0.13 in (3.17 mm) tube stub Single axial top port, 0.13" (3.17 mm) tube
Port Style Detail Barbless —
Suhu Operasi -40 °C to +125 °C -40°C to +125°C
Kemasan 8-SMD, Gull Wing, Top Port 8-SMD, Gull Wing (Case 1320-02, SOP-8)
Case Outline CASE 482A (Small Outline Package) —
Jenis Pemasangan Surface Mount Surface Mount
Sensing Technology Piezoresistive silicon, on-chip signal conditioned —
Ciri-ciri Temperature compensated, calibrated, media resistant —
Status RoHS [DATA_NEEDED: RoHS status not in provided web data] Compliant
Output Impedance [DATA_NEEDED: not in provided web data] —
Operating Pressure Range — 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI)
Maximum Over Pressure — [DATA_NEEDED: maximum over pressure rating]
Sensitivity — 45.9 mV/kPa (typical)
Arus Pemberi Arus — [DATA_NEEDED: supply current typical]
Response Time — 1.0 ms (typical)
Signal Conditioning — On-chip bipolar op-amp, temperature compensated
Element Type — Piezoresistive MEMS silicon

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