MT53E2G32D4DE-046 WT:A vs MT53E1G32D2FW-046 WT:B Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT53E2G32D4DE-046 WT:A disebabkan oleh Micron Technology dan MT53E1G32D2FW-046 WT:B disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MT53E2G32D4DE-046 WT:A ✓ AktifMicron Technology
MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron
MT53E1G32D2FW-046 WT:B ✓ AktifPengandingan Spesifikasi
| Parametr | MT53E2G32D4DE-046 WT:A | MT53E1G32D2FW-046 WT:B |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $98.44 |
| Jenis Ingatan | Mobile LPDDR4X SDRAM (volatile) | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) |
| Density | 64 Gbit | — |
| Organisasi | 2G × 32 bit | 1G x 32 |
| Speed Grade | -046 (2133 MHz tCK) | — |
| Clock Frequency | 2.133 GHz | — |
| Access Time (tCK) | 3.5 ns | — |
| Kadar Data | 4266 MT/s (DDR, dual-edge) | — |
| Supply Voltage (VDD1/VDD2/VDDQ) | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) | — |
| Antaramuka | Parallel command/address; HSUL_12 data | — |
| Kemasan | 200-ball TFBGA (10 × 14.5 mm) | 200-ball TFBGA (10 mm x 14.5 mm) |
| Ball Pitch | 1.0 mm | — |
| Suhu Operasi | -25 °C to +85 °C | -25C to +85C |
| Device Configuration | Dual-rank / dual-channel x32 | — |
| Write Cycle Time (typical) | 18 ns | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL-3 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Memory Capacity | — | 32 Gbit (4 GB) |
| Interface / Bus Width | — | Parallel, 32-bit |
| Clock Frequency (max) | — | 2.133 GHz (2133 MHz) |
| Data Rate (per pin) | — | 4266 MT/s |
| Clock Access Time (tCK) | — | 3.5 ns |
| Speed Bin | — | -046 |
| Supply Voltage VDD2 | — | 1.1 V |
| Supply Voltage VDDQ | — | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) |
| Die Configuration | — | Dual-Die Package (DDP) |
| On-Die Features | — | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset |