BAP64-05-TP - 175V Dual PIN Diode 3GHz SOT-23 | MCC
MPN: BAP64-05-TP β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.12 | $0.12 |
| 10 | $0.096 | $0.96 |
| 100 | $0.072 | $7.20 |
| 500 | $0.054 | $27.00 |
| 1,000 | $0.042 | $42.00 |
BAP64-05-TP Overview
A PIN diode is a semiconductor diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. Unlike a standard PN junction diode, the intrinsic layer gives the PIN diode a controllable resistance under forward bias and very low capacitance under reverse bias, making it the preferred switching and variable-resistance element in the RF front-end hierarchy of antennas, transceivers and test equipment.
Key features include very low diode capacitance (0.35 pF typical at 20 V reverse bias, 1 MHz), low diode forward resistance for low insertion loss, and low series inductance for minimal parasitic impact in high-frequency layouts. The dual common-cathode arrangement (anode-cathode-anode pinning: pin 1 anode, pin 2 common cathode, pin 3 anode) simplifies shunt/series attenuator topologies such as T-bridged and Pi attenuator networks.
Architecturally, the device is a silicon epitaxial PIN structure in an epoxy package meeting UL 94 V-0 flammability classification, with moisture sensitivity level 1 and a matte tin-plated, lead-free finish. Operating junction temperature spans -65 C to +150 C. As frequency rises, the stored charge in the intrinsic layer keeps the diode impedance linear and resistive, which is why this part stays usable to 3 GHz.
Typical applications include RF antenna switch matrices, step and variable RF attenuators in cellular and broadband equipment, transmit/receive switching in RF front ends, and protect/bias switching circuits in RF instrumentation.
Design consideration: because the PIN diode is a current-controlled resistor, RF performance depends directly on the forward bias current source quality - use a stable, low-noise DC bias network and adequate DC-blocking capacitors to isolate RF from the control path.
This page synthesizes distributor pricing, drop-in alternatives, pinout detail, and practical design notes not found in a single manufacturer datasheet.
Drop-in alternatives for BAP64-05-TP β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAP64-04-TP
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BAP64-06-TP
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BAP64-05
β Drop-Inπ Reference alternative (not in catalog)
BAP64-05
β Drop-Inπ Reference alternative (not in catalog)
BAP64-05
β Drop-Inπ Reference alternative (not in catalog)
BAP64-05-TP Maximum Ratings & Electrical Characteristics
| Diode Type | PIN diode, silicon |
| Configuration | Dual, common cathode (1 pair) |
| Reverse Voltage (Vr) | 175 V |
| Forward Current | 100 mA |
| Power Dissipation | 250 mW |
| Diode Capacitance (Cd) | 0.35 pF @ 20 V, 1 MHz |
| Applications | RF switching and attenuators, up to 3 GHz |
| Forward Voltage (Vf) | 1.1 V (typ, at rated current) |
| Operating Temperature Range | -65 C to +150 C (TJ) |
| Package | SOT-23-3 (TO-236-3, SC-59) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Number of Diodes | 2 |
| Series Inductance | Low (per datasheet feature list) |
| Moisture Sensitivity Level | 1 |
| Flammability Rating | UL 94 V-0 epoxy |
| Terminal Finish | Matte tin plated, lead free |
| Packaging | Tape & Reel (-TP suffix) |
| RoHS Status | Compliant |
| Halogen Free | Yes |
BAP64-05-TP Pin Configuration
| Pin 1 | Anode 1 β Anode of PIN diode 1 |
| Pin 2 | Common Cathode β Shared cathode connection of both diodes |
| Pin 3 | Anode 2 β Anode of PIN diode 2 |
Typical Applications
BAP64-05-TP is suitable for 6 applications: RF Antenna Switching, Step and Variable RF Attenuators, RF Front-End Protect / Limiter Circuits, RF Test and Measurement Instrumentation, Cellular and Broadband Infrastructure, VHF/UHF Radio and Amateur Equipment.
RF Antenna Switching
The BAP64-05-TP fits antenna T/R and diversity switching because its 175 V reverse voltage withstands high RF line swings while the 0.35 pF off-state capacitance at 20 V preserves port isolation at frequencies to 3 GHz. In a typical shunt SPDT switch, each diode is biased with a few milliamperes through an RF choke, presenting low forward resistance in the ON arm and near-open circuit in the OFF arm. The dual common-cathode die allows both legs to share one control node, halving control-line count. Compared with GaAs switch ICs, the PIN approach tolerates higher incident RF power and requires no negative supply rails.
Recommended
Step and Variable RF Attenuators
Because a forward-biased PIN diode behaves as a current-controlled resistor, the BAP64-05-TP is well suited to Pi and bridged-T attenuator networks in cellular, broadband and instrumentation front ends. With two common-cathode diodes in one SOT-23, a single package implements the series-shunt pairs of a balanced attenuator, keeping the two arms thermally and parametrically matched. Typical bias of 1-20 mA sets attenuation over a wide range with sub-ohm minimum resistance at high bias. The 100 mA / 250 mW ratings bound the maximum RF power per branch, and the low series inductance keeps insertion-loss flatness at 2-3 GHz.
Recommended
RF Front-End Protect / Limiter Circuits
In receiver protect circuits, PIN diodes shunt RF energy away from sensitive LNAs. The BAP64-05-TP's 175 V breakdown gives substantial headroom against high-power incident signals, and its silicon PIN structure self-actuates: rectified signal current lowers the diode resistance, clamping the input. The 0.35 pF capacitance keeps the limiter nearly invisible to the receiver in normal operation, limiting added noise figure and loss to fractions of a dB through L-band and S-band. Pair it with a backing diode or a second shunt stage for higher power-handling in radar and professional radio designs.
Recommended
RF Test and Measurement Instrumentation
Signal generators, network analyzers and RF switching matrices use PIN diode switch trees because they are fast, small, and free of relay wear. The BAP64-05-TP supports these designs with repeatable RF resistance versus bias current, low capacitance of 0.35 pF, and the 175 V rating needed to survive incidental overdrive. Its MSL 1 and matte tin finish suit standard SMT reflow in high-volume instrument manufacturing. The common-cathode dual configuration simplifies balanced switch cells in path selectors, where matching between the two diodes improves crosstalk and flatness performance from a few MHz to 3 GHz.
Recommended
Cellular and Broadband Infrastructure
Base station and CPE front ends employ PIN diodes in bias-tee controlled switch and attenuator functions where linearity matters. The BAP64-05-TP's charge-storage behavior keeps the RF resistance linear under modulation, minimizing intermodulation products compared with junction FET switches at comparable cost. Operating junction range of -65 C to +150 C supports outdoor enclosure environments, and the UL 94 V-0 epoxy meets telecom flammability requirements. Designers should budget dissipation per diode below 250 mW using worst-case bias current and RF drive, and verify isolation at the highest channel frequency where the 0.35 pF capacitance dominates.
Recommended
VHF/UHF Radio and Amateur Equipment
VHF/UHF transceivers, repeaters and amateur radio front ends use the BAP64-05-TP for T/R switching, RX preselection bypass, and simple AGC-controlled attenuators. At HF through UHF, the 0.35 pF off-capacitance yields more than 20 dB isolation per shunt diode at 50 ohms, and two diodes stacked achieve higher isolation. The 175 V rating comfortably handles the RF line voltages of 100 W-class transmitters when the switch network is arranged for voltage division. The SOT-23's low profile and low series inductance simplify stripline or lumped-element layouts in compact handheld and mobile radios.
Recommended
Recommended Products Summary
Engineering reference data for BAP64-05-TP β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAP64-04-TP | BAP64-06-TP | BAP64-05 (NXP) | BAP64-05 (JSCJ) |
|---|---|---|---|---|---|
| Package | SOT-23-3 (TO-236-3) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) | NXP Semiconductors | JSCJ |
| Configuration | Dual common cathode | Dual common cathode | Dual common cathode | Dual common cathode | Dual common cathode |
| Max Frequency | 3 GHz | 3 GHz | 3 GHz | 3 GHz | 3 GHz |
Key Differentiators
- 175 V reverse voltage headroom (vs Lower-voltage switching PIN diodes (e.g., BAR63 class))
- Two matched diodes in one package (vs BAP64-05 (single-diode pin diode packages from other families))
- Cost and sourcing (vs BAP64-05 (NXP))
Design Notes
The BAP64-05-TP is a current-controlled RF resistor: its RF resistance is set by forward bias current, not by voltage. Design the bias network as a stable current source (1-20 mA typical range for attenuator control) and never drive it from a raw voltage rail. Estimated dissipation check: at 100 mA forward current and roughly 1.1 V forward voltage, dissipation is about 110 mV*A = 110 mW, comfortably under the 250 mW rating - but at high RF drive add the rectified RF contribution before finalizing the budget.
Place DC-blocking capacitors and bias chokes/ resistors at each diode terminal with minimal stub length; at 3 GHz the SOT-23's own series inductance is already a meaningful fraction of the matching budget, so every extra millimeter of trace adds insertion loss and reduces isolation. Use a solid ground plane directly beneath the diode with via stitching around the pad to shorten return paths, and keep the common-cathode pin 2 bond path symmetric so both diodes see equal parasitics in balanced attenuator cells.
Do not exceed the 250 mW package dissipation in limiter or high-RF-drive applications: the 100 mA average current rating is an absolute limit, and second-breakdown-style failure in PIN diodes is usually thermal. Also, PIN diodes require carrier storage time to appear resistive - at very low bias currents the device behaves more like a junction diode, generating intermodulation distortion. Keep at least 1 mA forward bias in linear RF paths, and verify recovery time when switching high-power RF, since stored charge must be swept out before the diode turns off.
Compliance Information
Per the MCC/GME BAP64 family datasheet: RoHS compliant, lead-free matte tin-plated terminals, halogen free, epoxy meets UL 94 V-0, MSL 1.
