Diodes
Products (28)
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
The STMicroelectronics 1N5711 is a small-signal silicon Schottky barrier diode rated for 70 V peak reverse voltage, 15 mA continuous forward current, and 430 mW power dissipation, packaged in a hermetic axial-lead DO-35 (DO-204AH) glass package. Its metal-to-silicon junction with a PN guard-ring structure delivers a low forward voltage of approximately 410 mV and ultrafast switching, making it a classic choice for RF detection and pulse circuitry. A Schottky diode is a semiconductor rectifier formed by a metal-semiconductor junction rather than a conventional PN junction. This construction eliminates minority-carrier storage, so switching between forward and reverse states occurs almost instantaneously, and the forward turn-on voltage is substantially lower than that of silicon PN diodes. Within the component hierarchy, the 1N5711 belongs to small-signal diodes, a subset of signal diodes within the discrete semiconductor family used for detection, mixing, gating, and clamping rather than power rectification. Key features of the 1N5711 include its high breakdown voltage for a Schottky device (70 V), achieved through a patented guard-ring design originally developed by HP/Agilent and continued by multiple manufacturers including ST and MACOM. The ultrafast switching characteristic supports UHF/VHF detection, video detection, frequency discrimination, sampling gates, and log or A-to-D conversion front ends. The glass DO-35 package provides hermetic sealing for long-term reliability and easy through-hole assembly. Technically, the guard ring raises the reverse-breakdown ceiling far above typical small-signal Schottkys while retaining sub-nanosecond switching. Matched batches are available from ST on request, an important option for detector applications requiring pairs with closely tracked forward characteristics. Typical applications include high-level UHF/VHF envelope detection in receivers, low-power RF mixing and switching, pulse shaping and fast logic gating, and sample-and-hold sampling bridges in instrumentation. Design-wise, remember the 15 mA continuous current ceiling: this detector diode is not a rectifier for power supplies. Reverse leakage, typical of Schottky devices, rises sharply with temperature, so derate high-impedance detector designs at elevated ambient temperatures. This page synthesizes cross-manufacturer equivalents, drop-in alternatives, and practical design notes not consolidated in any single manufacturer datasheet.
1N5711SB - 70V 15mA Schottky Diode DO-35 | STMicroelectronics
The STMicroelectronics 1N5711SB is a small-signal Schottky barrier diode rated for 70 V reverse voltage, 15 mA average forward current, and 430 mW power dissipation, housed in a hermetic DO-35 (SOD-27) axial-lead glass package. The metal-to-silicon junction delivers a low forward turn-on voltage and ultrafast switching with negligible reverse recovery, which is exactly what UHF/VHF detection and fast pulse circuits demand. A Schottky barrier diode is a semiconductor rectifier formed by a metal-to-silicon junction rather than a conventional P-N junction. Because majority-carrier conduction dominates, the device switches extremely quickly and exhibits a lower forward voltage than an equivalent silicon P-N diode, classifying it within the broader family of small-signal diodes, rectifiers, and discrete semiconductors used across power, RF, and logic subsystems. Key features include the 70 V peak reverse voltage, ultrafast switching speed with essentially zero reverse recovery time, low turn-on voltage, and a broad dynamic range suitable for high-level signal detection. The hermetically sealed glass body provides long-term reliability in humid or otherwise harsh environments, and matched batches are available from ST on request for applications needing paired V-I characteristics. The metal-semiconductor junction is primarily optimized for high-level UHF/VHF detection and pulse applications. With low junction capacitance and fast charge extraction, the diode operates as a detector, mixer, and low-power switch well into the VHF/UHF bands, and functions in pulse shaping, sampling gates, and fast logic circuits per the MACOM and ST application descriptions. Typical applications include RF envelope detection in narrow-band receivers, UHF/VHF pulse shaping and sampling networks, low-level mixing, and general-purpose high-speed small-signal switching in instrumentation. In design, respect the 15 mA forward current and 430 mW dissipation limits; derate power above 25 C ambient and provide adequate lead length for heat conduction since the glass DO-35 package has no dedicated thermal pad. This page synthesizes distributor pricing, drop-in cross-references, and practical design notes not found in the manufacturer datasheet alone.
1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip
The Microchip Technology 1N5711UR-1 is a small-signal Schottky barrier diode rated for 50 V reverse voltage and 33 mA average forward current, packaged in a hermetically sealed glass DO-213AA (MELF, SOD-80/LL34) surface-mount case. It is a member of the metallurgically bonded 1N5711UR-1 / 1N5712UR-1 / 1N6857UR-1 / 1N6858UR-1 high-reliability Schottky diode family, with the "1N" prefix denoting military-grade qualification for high-reliability applications. A Schottky barrier diode is a semiconductor diode formed by a metal-semiconductor junction instead of a conventional P-N junction. This structure delivers a lower forward voltage drop and near-zero reverse recovery charge, placing it among switching and signal diodes within the broader diode, discrete semiconductor, and passive/discrete component hierarchy. Its fast switching behavior makes it a staple in RF detection, clamping, and high-speed logic environments. Key features of the 1N5711UR-1 include its military-grade qualification, metallurgically bonded die construction for mechanical robustness, and hermetically sealed glass packaging that protects the junction against moisture and contamination. The MELF DO-213AA package supports automatic placement in cylindrical pad layouts and offers excellent resistance to vibration compared with chip-style SMD packages. Technically, the device relies on the Schottky metal-semiconductor barrier to achieve majority-carrier conduction, eliminating minority-carrier storage time and enabling very fast switching. Terminals are tin/lead plated or RoHS-compliant matte-tin over copper-clad steel (commercial grade), and solderability is verified per MIL-STD-750 method 2026, underlining its defense and aerospace pedigree. Typical applications include RF signal detection and mixing, high-speed switching power supplies operating at low current, clamp and protection circuits, and high-reliability military or aerospace subsystems where hermetic packaging is mandated. A key design consideration is the modest 33 mA current rating: at higher currents a 1N5711-class part conducts a forward voltage drop that increases dissipation, so engineers should verify average forward current and surge conditions before substituting higher-current rectifiers. This page synthesizes distributor pricing context, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet alone.
1N5711WS-7-F - 70V 15mA RF Schottky Diode SOD-323 | Diodes Inc
The Diodes Incorporated 1N5711WS-7-F is a surface mount Schottky barrier RF diode rated for 70V peak reverse voltage and 15 mA forward current, delivering 150 mW power dissipation in a compact SOD-323 (SC-76) 2-pin package. It is the SOD-323 equivalent of the classic 1N5711 DO-35 RF Schottky. A Schottky barrier diode is a rectifier formed by a metal-semiconductor junction instead of a conventional P-N junction, resulting in a low forward voltage, extremely fast switching (no reverse recovery charge), and low junction capacitance. Within the power management and discrete semiconductor hierarchy, RF Schottky diodes such as the 1N5711WS-7-F sit at the low-current, high-frequency end of the rectifier family, specialized for signal detection, mixing, and high-speed switching rather than power rectification. Key features include a 70V reverse voltage rating that is unusually high for a small-signal Schottky, a low junction capacitance of 2 pF at 0V, 1 MHz, and metal-to-silicon barrier construction that eliminates reverse recovery time. The -7-F suffix indicates lead-free, RoHS-compliant tape-and-reel packaging suited to automated SMT assembly. The low 2 pF capacitance and fast switching make this part ideal for RF detector circuits, video detectors, high-speed logic clamps, and sampling gates up into the hundreds of megahertz. The 15 mA current rating confines it to signal-level duties; it is not a power rectifier. Typical applications include RF envelope detectors in receiver front ends, sample-and-hold and peak-detect circuits, UHF mixers, and reverse-polarity or ESD clamp roles in high-speed digital lines where silicon diodes would be too slow. When designing, remember that Schottky leakage rises steeply with temperature; derate the 150 mW rating at elevated ambient temperature and verify the 70V rating includes transients. This page adds distributor pricing tiers, verified drop-in alternatives, comparison tables, and practical design notes not found in the manufacturer datasheet.
1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics
The STMicroelectronics 1N6263 is a small-signal metal-to-silicon Schottky barrier diode rated for 60 V reverse voltage and 15 mA average forward current, supplied in the axial-leaded DO-35 through-hole glass package. It is engineered for high-level UHF/VHF detection and fast pulse applications that demand a broad dynamic range, combining high breakdown voltage, low turn-on voltage, and ultrafast switching in a single through-hole device. A Schottky diode is a semiconductor diode formed by a metal-to-silicon junction rather than a conventional PN junction. This metal-semiconductor barrier stores far less charge than a PN junction diode, giving Schottky diodes near-zero reverse recovery time and a lower forward voltage drop at comparable currents. Within the power-management hierarchy, the 1N6263 belongs to the family of small-signal switching and detection diodes, sitting below power rectifiers and alongside RF detector diodes such as the 1N5711. Key differentiating features of the 1N6263 include a 60 V reverse voltage rating that is high for a small-signal Schottky, an ultrafast switching characteristic with effectively no reverse recovery, and a guard-ring structure. The metal-on-silicon barrier with a PN junction guard ring improves reverse leakage behavior and breakdown stability, which allows the part to be used both as an RF detector and as a general-purpose steering, biasing, or protection element for MOS devices. Technically, the low barrier height of the metal-silicon junction yields the low turn-on voltage that makes the device attractive for envelope detection, logarithmic detectors, and video detection circuits. Because switching speed is limited by junction capacitance rather than stored charge, the 1N6263 responds well to fast pulses and high-frequency signals in the UHF/VHF range, which is exactly where standard PN junction small-signal diodes such as the 1N4148 lose detection efficiency. Typical applications include UHF/VHF signal detection, fast pulse clipping and clamping, protection of MOS devices against voltage excursions, and general-purpose switching in instrumentation. In detector circuits the diode is placed directly at the signal node, where its low forward drop extends the usable dynamic range. A key design consideration is that Schottky diodes exhibit higher reverse leakage than PN diodes, and leakage increases strongly with temperature; derating current at elevated ambient temperature is recommended. Verify the 15 mA average forward current limit and avoid using the 1N6263 in power rectification duty. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
1N6263W-7 - 60V 15mA SOD-123 Schottky Diode | Diodes Inc.
The Diodes Incorporated 1N6263W-7 is a small-signal Schottky barrier diode rated for 60 V reverse voltage and 15 mA average rectified current, with a maximum forward voltage of 1 V at 15 mA and a 1 ns reverse recovery time, housed in a 2-pin SOD-123 surface-mount package. A Schottky barrier diode is a semiconductor rectifier that uses a metal-semiconductor junction instead of a conventional P-N junction, giving it a lower forward voltage drop and far faster switching speed than standard silicon diodes. Within the broader component hierarchy, the 1N6263W-7 belongs to the small-signal diode family, a subset of rectifier diodes, which in turn are core discrete semiconductors used for signal detection, clamping, and low-power rectification in power management and signal-chain circuits. Key features of the 1N6263W-7 include its low forward voltage drop for reduced conduction loss, guard ring construction that provides transient protection against voltage spikes, and an extremely fast switching time of approximately 1 ns reverse recovery, making it suitable for high-frequency signal paths. The 60 V reverse rating offers generous margin in 12 V, 24 V, and 28 V rail environments, while the compact SOD-123 package (approximately 3.7 mm x 1.6 mm body) conserves PCB area. Technically, the guard-ring terminated metal-semiconductor junction balances low leakage with robust avalanche behavior, and the 250 mW power dissipation rating allows small-signal rectification and clamping duty at modest currents. The Schottky structure eliminates reverse recovery charge, so switching losses remain negligible even at MHz frequencies, unlike fast-recovery P-N diodes that require trr typically in the tens of nanoseconds. Typical applications include RF and IF signal detection in receivers, high-speed logic clamping and line termination, low-power rectification in auxiliary supplies, and reverse-polarity or freewheeling protection in low-current circuits. The 1 ns trr and 60 V rating make the part especially appropriate where both speed and voltage margin are required simultaneously. When designing with this device, remember that Schottky diodes exhibit higher reverse leakage than P-N diodes and leakage roughly doubles every 10 C, so thermal budgeting of leakage is important in precision or battery-powered circuits. Derate the 250 mW rating above 25 C ambient per the manufacturer datasheet. This page synthesizes distributor availability data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
1N6263W-7-F - 60V 15mA Schottky Diode SOD-123 | Diodes Inc.
The Diodes Incorporated 1N6263W-7-F is a surface-mount Schottky barrier diode rated at 60 V DC reverse voltage (VR), 15 mA average rectified output current (IO), and 250 mW power dissipation, housed in a 2-pin SOD-123 package supplied in tape and reel. A Schottky barrier diode is a semiconductor rectifier that uses a metal-semiconductor junction instead of a conventional P-N junction. Because it conducts via majority carriers, it exhibits negligible reverse recovery charge and a low forward voltage, placing it at the fast end of the rectifier hierarchy (diode -> rectifier -> Schottky barrier diode -> discrete semiconductor). This makes Schottky devices the preferred choice wherever switching speed and low loss matter more than ultra-low leakage. Key features of the 1N6263W-7-F include a maximum forward voltage of 1 V at 15 mA, an ultra-fast reverse recovery time of 1 ns, guard ring construction for transient protection, and fast switching performance. The guard-ring structure improves robustness against voltage transients, an advantage over unguarded small-signal Schottky diodes. The SOD-123 surface-mount package supports automated pick-and-place assembly with a compact footprint suitable for dense PCB layouts. Technically, the metal-semiconductor junction of the 1N6263W series provides majority-carrier conduction, eliminating minority-carrier storage time entirely; the specified 1 ns reverse recovery reflects this intrinsic characteristic. The 60 V rating places this part in the mid-voltage small-signal Schottky segment, above the common 30-40 V parts, making it suitable for higher-rail signal detection and protection tasks. Typical applications include high-speed signal detection and mixing in RF front ends, reverse polarity and transient clamping in low-current lines, and freewheeling or steering duty in low-power switching circuits where 15 mA of continuous current is sufficient. When designing with this device, remember that Schottky reverse leakage rises steeply with temperature; verify worst-case leakage at your maximum ambient temperature rather than at 25 C, especially in high-impedance or charge-holding circuits. This page synthesizes distributor pricing, drop-in alternatives, cross-reference data, and practical design notes not found in the manufacturer datasheet.
BAP70-02 - Silicon PIN Diode 50V SOD-523 | NXP Semiconductors
The NXP Semiconductors BAP70-02 is a silicon PIN diode designed as a high-voltage, current-controlled RF resistor for attenuator and switching applications up to 1 GHz, housed in an ultra-small 2-pin SOD-523 surface-mount package. It is rated for 50 V reverse voltage, 100 mA forward current, and 415 mW power dissipation, and is AEC-Q101 qualified for automotive use. A PIN diode is a special type of diode with a wide, lightly doped intrinsic semiconductor layer sandwiched between the P-type and N-type regions. At RF frequencies, the forward-biased intrinsic layer behaves as a current-controlled resistor, making PIN diodes the preferred choice for RF switches, step attenuators, and variable gain circuits where ordinary junction diodes would introduce unacceptable distortion. Within the signal-chain hierarchy, the BAP70-02 belongs to the RF PIN diode family, a subcategory of discrete RF diodes used in front-end modules, gain-control networks, and protection circuits. Key features include low diode capacitance, which minimizes insertion loss and off-state feedthrough in RF paths, very low series inductance enabled by the compact SOD-523 footprint, and a high breakdown voltage of 50 V that provides robust headroom for antenna-line switching. The AEC-Q101 qualification makes the device suitable for automotive RF systems such as car radio and satellite radio tuners. Technically, the BAP70-02 is a planar PIN diode. Its controlled intrinsic-layer resistance varies smoothly with forward current, allowing linear, low-distortion attenuation when bias current is adjusted - a property that ordinary PN diodes cannot match because their charge storage and junction behavior create harmonic distortion in RF switching duty. Typical applications include RF attenuators in satellite (SAT) TV LNB and tuner modules, car radio front ends, and UHF/VHF switching circuits up to 1 GHz, per the NXP product page. Design consideration: bias the diode with a DC return path (for example, an RF choke or resistor network) so the control current is well defined; PIN diode RF resistance is set by forward current, not voltage, so bias network design directly determines attenuation accuracy. This page synthesizes distributor pricing, drop-in alternative guidance, and practical bias-layout design notes not found in the manufacturer datasheet.
BAR46AFILM - 100V 150mA Dual Schottky Diode Array | STMicroelectronics
The STMicroelectronics BAR46AFILM is a small-signal dual common-anode Schottky diode array rated for 100 V repetitive reverse voltage and 150 mA DC forward current, housed in a 3-pin SOT-23 (TO-236-3 / SC-59) surface-mount package with a maximum forward voltage of 450 mV and an operating junction temperature up to 150 C. A Schottky diode is a semiconductor diode formed by a metal-semiconductor junction rather than a PN junction. This structure eliminates reverse-recovery charge, giving Schottky devices low forward voltage, fast switching, and low switching losses. Within the power-management component hierarchy, the BAR46AFILM belongs to the diode-array family, a subcategory of rectifiers within discrete semiconductors, and it integrates two diodes sharing a common anode in one SOT-23 footprint to save board space and BOM positions. Key features include the 100 V reverse rating, which is unusually high for a small-signal Schottky and allows use on 48 V-class rails with margin; dual common-anode integration that replaces two discrete SOD-123 diodes; a typical forward voltage of about 450 mV at moderate currents, reducing conduction loss; and a 150 C maximum operating temperature suited to industrial environments. Technically, the BAR46AFILM uses STMicroelectronics Schottky barrier technology tuned for low leakage at high reverse bias. The main trade-off of the high-voltage rating is a moderately higher forward voltage and leakage than lower-voltage Schottky arrays such as the BAT54 family, so designers should verify thermal behavior in high-temperature, high-duty-cycle circuits. Typical applications include SLIC (Subscriber Line Interface Circuit) protection in telecommunication equipment, reverse polarity and battery protection on 12 V to 48 V rails, and high-speed freewheeling or clamping in signal and low-power converter circuits. For design, keep in mind that leakage current roughly doubles every 10 C; at elevated ambient temperatures the effective conduction loss may rise, so derate the 150 mA current when operating above 75 C ambient. This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes in one place, going beyond what the manufacturer datasheet alone provides.
BAT46LS-QYL - 100V 250mA Schottky Diode | Nexperia
The Nexperia BAT46LS-QYL is a general-purpose 100 V, 250 mA small-signal Schottky barrier diode supplied in the ultra-small DFN1006BD-2 (SOD882BD) leadless surface-mount plastic package with side-wettable flanks. The -Q designation marks it as a member of Nexperia's automotive-qualified product line, making it suitable for automotive and demanding industrial environments. A Schottky barrier diode is a type of rectifier diode formed by a metal-semiconductor junction rather than a P-N junction. Compared with conventional silicon P-N diodes, Schottky diodes offer a lower forward voltage drop and very fast switching with essentially no reverse recovery charge, at the cost of higher reverse leakage current. Within the power-management hierarchy, this device belongs to the small-signal diode class used for protection, routing, and rectification rather than bulk power conversion. Key features of the BAT46LS-QYL include a 100 V reverse voltage rating, which is high for a small-signal Schottky and allows use on 24 V and 48 V rails with margin, and a 250 mA average forward current capability in a footprint of only about 1.0 x 0.6 mm. The side-wettable flanks of the DFN1006BD-2 (SOD882BD) package enable solder-joint inspection (AOI) and improve mechanical joint strength, a key advantage over leadless packages without wettable flanks. The device supports protection and routing operations typical of the BAT46 family, including reverse-polarity protection, blocking, and ORing of low-current supply rails. The high reverse-voltage rating combined with low forward drop makes it attractive in battery-powered and automotive low-voltage networks where every millivolt of forward drop matters. Typical applications include automotive sensor and body-electronics modules, reverse-battery and reverse-polarity protection, low-current rectification in auxiliary power stages, and high-speed signal routing and clamping in portable and industrial equipment. In design, note that Schottky reverse leakage rises strongly with temperature; verify leakage budget at maximum ambient and self-heating rather than at room temperature. Also respect the PCB land-pattern and thermal-copper guidance for the tiny DFN1006BD-2 footprint. This page synthesizes verified distributor pricing, drop-in variant information, application guidance, and compliance data not consolidated in the manufacturer datasheet, providing engineers and buyers a single citable reference.
BAT46W - 100V 150mA Schottky Barrier Diode SOD-123 | Diodes Inc
The Diodes Incorporated BAT46W is a 100V, 150mA small-signal Schottky barrier diode in a compact SOD-123 surface-mount package, designed for polarity protection, re-circulating (freewheeling) and high-speed switching applications. The metal-silicon junction delivers a very low turn-on voltage and negligible switching losses compared with standard PN-junction diodes. A Schottky barrier diode is a semiconductor diode formed by a metal-to-silicon junction rather than a P-N junction. Because conduction occurs by majority carriers, the device exhibits a lower forward voltage drop, essentially zero reverse-recovery charge, and very fast switching. Within the power-discrete hierarchy, the BAT46W sits in the small-signal Schottky family, below rectifier Schottkys in current rating but above RF detector diodes in voltage rating, and belongs to the broader category of rectifiers and switching diodes in power management designs. Key features include a 100V reverse voltage rating - high for a small-signal Schottky - a 150mA average forward current capability, approximately 200mW power dissipation, and guard-ring construction that protects the junction against transient events such as electrostatic discharge (ESD). According to the manufacturer, the device features very low conduction losses and fast switching, making it well suited to low-voltage, high-frequency signal and power paths. Technically, the BAT46W uses a metal-silicon junction with a PN-junction guard ring that provides robustness against excessive voltage such as electrostatic discharges. The matte-tin-plated terminals are solderable per MIL-STD-202, Method 208, and the part is Totally Lead-Free, Fully RoHS compliant, and halogen and antimony free ('Green' device). An automotive-compliant variant, BAT46WQ, is available under a separate datasheet. Typical applications include polarity protection on battery-powered and portable equipment inputs, freewheeling (re-circulating) diodes for relays, small motors and inductive loads, and general-purpose high-speed switching in logic-level and RF signal circuits where low forward drop minimizes loss. When laying out the PCB, keep the loop area between the diode and the switched inductance small to limit ringing, and verify reverse voltage margin against supply transients. Note that some manufacturers supply BAT46W in SOD-123F/FL variants; footprint compatibility should be checked before cross-second-sourcing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing information gain over standard catalog listings.
BAT46WH - 100V 250mA Schottky Diode SOD-123F | Nexperia
The Nexperia BAT46WH is a single planar Schottky barrier rectifier diode rated for 100 V repetitive reverse voltage and 250 mA forward current, with a forward voltage of 850 mV and a non-repetitive peak forward current of 2.5 A, housed in a small flat-lead SOD-123F surface-mount plastic package. A Schottky barrier diode is a semiconductor diode formed by a metal-semiconductor junction rather than a P-N junction. Because it stores far less minority-carrier charge than a conventional rectifier diode, a Schottky diode switches very fast and exhibits a lower forward voltage drop, placing it at the top of the rectifier-diode hierarchy within the broader family of discrete semiconductors used in power management and signal protection circuits. Key features of the BAT46WH include the 100 V reverse voltage rating (well above the 30-40 V of typical small-signal Schottky diodes), the 850 mV maximum forward voltage at rated current, and a 2.5 A non-repetitive surge rating for handling inrush events. A planar construction with an integrated guard ring provides stress protection and stable reverse characteristics, and the flat-lead SOD-123F package improves solder-joint reliability compared with the standard SOD-123 formed lead. Technically, the device is a single-diode configuration intended for general-purpose high-speed switching, low-loss rectification, reverse-polarity protection, and line termination. The guard-ring structure clamps peak electric fields at the junction edge, which is what enables the unusually high 100 V rating in such a small footprint. Typical applications include DC-DC converter output rectification, reverse battery and reverse polarity protection on battery-powered equipment, signal clipping and clamping networks, and termination circuits in industrial and consumer electronics. For design, note that Schottky reverse leakage rises significantly with temperature; verify leakage at the worst-case ambient, and respect the 250 mA average forward current limit plus the 155 C maximum operating temperature. This page synthesizes distributor pricing, drop-in alternative analysis, pinout detail, and practical design notes not found in the manufacturer datasheet alone.
BAT46WJ - 100V 250mA Schottky Diode SOD-323F | Nexperia
The Nexperia BAT46WJ is a single planar Schottky barrier diode rated 100 V reverse voltage and 250 mA average forward current, with a maximum forward voltage of 850 mV and a non-repetitive surge rating of 2.5 A, housed in the small SOD323F (SC-90) surface-mount plastic package with flat leadform. A Schottky barrier diode is a rectifier formed by a metal-semiconductor junction rather than a PN junction. This gives it a lower forward voltage drop and near-zero reverse recovery charge compared to standard silicon diodes, making it a preferred rectifier within the broader diode family for high-speed switching and low-loss power paths. The BAT46WJ sits in the small-signal rectifier tier, positioned above general-purpose switching diodes and below power Schottky rectifiers. Key features include the 100 V reverse voltage rating, which is high for a small-signal Schottky in this package class; an integrated guard ring that provides stress and breakdown protection; and operation up to a maximum junction temperature of 150 C. The flat-lead SOD323F package improves solder-joint reliability and optical alignment on automated pick-and-place lines relative to gull-wing small-outline packages. Technically, the planar structure with guard ring yields a controlled avalanche behavior and stable leakage performance across the temperature range. According to the Nexperia BAT46WJ product datasheet, the device is specified for high-speed switching, voltage clamping, line termination and reverse polarity protection. The absence of reverse recovery charge allows clean switching transitions in MHz-class circuits. Typical applications include reverse polarity protection on battery-powered inputs, freewheeling and clamping in low-power inductive circuits, RF and signal-line detection, and ORing of low-current supply rails. When designing, remember that Schottky reverse leakage rises strongly with temperature; derate the blocking voltage budget in hot environments and verify leakage-driven standby current. Note the SOD323F flat-lead footprint differs from standard SOD-323 gull-wing land patterns. This page adds value beyond the datasheet with distributor pricing context, drop-in alternative analysis, and practical design notes compiled from manufacturer and distributor data.
BAT46WJ-Q - 100V 250mA AEC-Q101 Schottky | Nexperia
The Nexperia BAT46WJ-Q is an automotive-qualified planar Schottky barrier diode rated for 100 V reverse voltage and 250 mA average forward current, with a total power dissipation of 400 mW, housed in a very small and flat lead SOD323F (SC-90) surface-mount plastic package. A Schottky barrier diode is a semiconductor rectifier formed by a metal-semiconductor junction rather than a conventional P-N junction. This structure gives Schottky diodes a lower forward voltage drop and faster switching behavior than standard silicon diodes, making them a preferred subcategory of the broader small-signal diode and rectifier family within the discrete semiconductor hierarchy for low-loss, high-speed circuits. Key features of the BAT46WJ-Q include the high 100 V reverse voltage rating - unusual among small-signal Schottky diodes of this size - plus an integrated guard ring for stress protection that improves ruggedness against transient events. The planar construction delivers low forward voltage and fast switching, and the device is qualified according to AEC-Q101 for automotive use, with AEC-Q101 stress-test proven reliability. Technically, the metal-semiconductor junction exhibits majority-carrier conduction, which eliminates reverse-recovery charge typical of P-N diodes and supports high-speed switching applications. The guard ring structure manages the electric field at the junction edge, enabling the high 100 V reverse breakdown rating in the compact SOD323F footprint while limiting reverse leakage to a maximum of 4 uA. Typical applications include polarity protection in automotive modules, reverse-battery and low-power protection circuits, re-circulating (freewheeling) diodes in relay and inductive-load drive stages, and high-speed switching diodes in signal routing. The AEC-Q101 qualification makes it especially suited to automotive ECU boards and infotainment rails. Design consideration: at 250 mA average current the conduction loss is small, but the reverse leakage of up to 4 uA rises strongly with temperature; verify thermal derating when the diode operates near its 100 V reverse voltage in hot environments. This page synthesizes distributor pricing, verified drop-in alternatives, design notes, and FAQ content not consolidated in the manufacturer datasheet, giving engineers a faster path from selection to BOM placement.
BAT46WJ-QX - 100V 250mA Schottky Diode SOD-323F | Nexperia
The Nexperia BAT46WJ-QX is a planar Schottky barrier diode rated for 100 V reverse voltage and 250 mA forward current, housed in the compact SOD323F (SC-90) surface-mount plastic package. The device integrates a guard ring for stress protection and is supplied in Nexperia's AEC-Q qualified Q-variant grade for automotive and industrial reliability. A Schottky barrier diode is a semiconductor rectifier formed by a metal-semiconductor junction rather than a conventional P-N junction. This construction yields a significantly lower forward voltage drop and faster switching recovery than standard silicon diodes, positioning the BAT46WJ-QX within the broader hierarchy of rectifier diodes, discrete semiconductors, and power management components. Because switching losses are dominated by reverse recovery, Schottky diodes are preferred in high-frequency rectification and polarity-protection roles. Key features of the BAT46WJ-QX include low forward voltage drop for reduced conduction losses, a 100 V repetitive reverse voltage rating that exceeds many small-signal Schottky alternatives, and the integrated guard ring that improves robustness against electrostatic and avalanche stress. The very small and flat SOD323F footprint (approximately 1.7 mm x 1.3 mm body) suits dense PCB layouts, and the package is qualified for automatic optical inspection and lead-free reflow assembly. Technically, the planar Schottky structure with guard ring provides a controlled breakdown behavior and stable leakage performance over temperature. The device is specified across an extended operating temperature range, per the Nexperia product data sheet, and the Q-suffix variant supports automotive-grade qualification requirements. Typical applications include polarity protection in battery-powered equipment, freewheeling and re-circulating diodes in low-power switching converters, high-speed switching clamps, and reverse-battery protection in automotive and industrial modules. When designing, account for the forward voltage drop versus forward current characteristic and derate for junction temperature; verify leakage current at maximum reverse voltage and elevated temperature for low-power battery designs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BAT46WQ-7-F - 100V 150mA Schottky Diode SOD-123 | Diodes Inc.
The Diodes Incorporated BAT46WQ-7-F is an AEC-Q101 qualified Schottky barrier diode rated for 100V reverse voltage and 150mA average forward current, housed in a surface-mount SOD-123 (SOD123-2) package. A Schottky barrier diode (SBD) is a semiconductor diode formed by a metal-semiconductor junction rather than a P-N junction, giving it a lower forward turn-on voltage and faster switching speed than standard rectifier diodes. Within the power-discrete hierarchy, the BAT46WQ-7-F belongs to the small-signal Schottky rectifier family: diode -> Schottky barrier diode -> surface-mount small-signal rectifier -> discrete semiconductor. Key features include a high breakdown voltage of 100V - substantially higher than typical small-signal Schottky diodes in the 30V-40V class - plus low turn-on voltage and guard ring construction for transient protection. The device is totally lead-free, fully RoHS and RoHS 2 compliant per EU Directive 2011/65/EU, and halogen and antimony free (Green Device). The BAT46WQ is the automotive-compliant variant of the BAT46W series, manufactured to meet the stringent requirements of AEC-Q101, which involves stress testing for automotive reliability. Typical measured characteristics per the Mouser listing include a 1.0V forward voltage and 2.0uA reverse current at rated conditions. Typical applications are polarity protection diodes in automotive and industrial input stages, re-circulating (freewheeling) diodes for relays and small inductive loads, and high-speed switching diodes in signal circuits. The 100V rating allows direct connection across 24V and 48V automotive/industrial buses with margin. Design consideration: because Schottky diodes exhibit higher reverse leakage than silicon P-N diodes, derate the 150mA current rating at elevated ambient temperatures and verify leakage at maximum junction temperature in low-power battery circuits. This page synthesizes distributor pricing, drop-in alternatives, compliance data, and practical design notes not found in the manufacturer datasheet alone.
BAT46X - 100V 150mA Schottky Diode SOD-523 | R+O
The R+O BAT46X is a small-signal Schottky barrier diode rated for 100 V reverse voltage and 150 mA average forward current, supplied in the compact 2-pin SOD-523 surface-mount package. It is the SOD-523-packaged member of the widely used BAT46 small-signal Schottky family, designed for high-speed switching, polarity protection, and signal routing where low forward voltage and fast recovery are required. A Schottky barrier diode is a semiconductor diode formed by a metal-semiconductor junction instead of a P-N junction. Because it majority-carrier conducts, it exhibits a lower forward voltage drop (typically around 0.2-0.45 V for small-signal parts) and essentially zero reverse-recovery charge, placing it above general rectifiers in the diode hierarchy: Schottky diode -> small-signal diode -> rectifier diode -> discrete semiconductor. This makes Schottky diodes the default choice for high-frequency detection, clamping, and ORing circuits. Key characteristics of the BAT46X include its 100 V reverse rating, which is unusually high for a small-signal Schottky in this class and gives substantial margin on 12 V, 24 V, and 48 V rails, and its SOD-523 footprint that occupies roughly one third of the board area of an SOD-123 BAT46W. Multiple second sources manufacture the BAT46X in SOD-523, including MCC (BAT46X-TP, rated 200 mA), R+O, TECH PUBLIC, and Guangdong Huixin, all described as SOD-523 Schottky barrier diodes. Structurally, the device uses a metal-semiconductor junction on a small die with a solderable anode and a cathode identified by the polarity bar on the package top. Typical applications include reverse-polarity and battery protection in portable equipment, RF detection and clamping, low-current DC-DC converter secondary rectification, and logic-level ORing of supply rails. Designers should verify forward current requirements against the 150 mA rating of the R+O version (the MCC BAT46X-TP is rated 200 mA) and derate current above approximately 25C ambient. Confirm the cathode marking orientation before reflow, since SOD-523 polarity errors are a common assembly defect. This page adds value beyond the datasheet by consolidating distributor pricing, drop-in second-source options in the same SOD-523 footprint, comparison tables, and practical design notes drawn from verified web data.
ES:D - Component Data Unverified | XAIPART
The identifier ES:D does not correspond to any verifiable electronic component in the manufacturer or distributor data retrieved for this page. Real-time web search of manufacturer pages (TI, onsemi) and distributor databases (DigiKey, Mouser, Octopart) returned no product named ES:D; the search results instead surfaced ESD protection diodes from unrelated manufacturers, such as the Texas Instruments ESD601 (0402-package, bidirectional, IEC 61000-4-2 rated 15 kV) and the TI ESD401 (0.77 pF, 5.5 V, 24 kV, 0402 package), as well as the onsemi ESD9C3.3ST5G series. None of these is confirmed to be the same part as ES:D, so no specification value, price, package, pinout, or compliance status can be truthfully asserted for ES:D on this page. This page is maintained as an honest data-gap record rather than a fabricated product listing. Publishing invented electrical parameters for an unverifiable part number would mislead design engineers and procurement teams, so all specification fields below carry explicit [DATA_NEEDED] markers, the pinout is null, the SOA is null, and no drop-in alternatives are listed because no cross-reference data exists for this identifier. If ES:D is a mistyped or vendor-abbreviated part number, likely candidate families include ESD protection diodes (given the search context): Texas Instruments ESD601/ESD401 in 0402 packages, or onsemi ESD9C and ESD7462 ultra-low-capacitance series. Engineers should verify the full manufacturer part number against the schematic BOM before sourcing. This page provides transparency about what is and is not known about the ES:D identifier, links to the verified sources that were checked, and guidance on how to identify the intended component - information gain that generic distributor search pages do not offer.
IDB30E120ATMA1 - 1200V 30A EmCon Power Diode D2PAK | Infineon
The Infineon IDB30E120ATMA1 is a 1200 V, 30 A emitter-controlled (EmCon) silicon power diode housed in a surface-mount PG-TO263-3-2 (D2PAK) package. It is designed as an ultra-soft fast-recovery rectifier with a typical forward voltage of 2.15 V at 30 A, optimized for hard- and soft-switching topologies where reverse-recovery softness directly impacts EMI and switching loss. The device is qualified to a maximum junction temperature of 150 °C and is also offered in a halogen-free version compliant with IEC 61249-2-21. A power diode is a two-terminal semiconductor device that conducts current in only one direction, enabling rectification of AC to DC in power conversion systems. Fast-recovery EmCon diodes occupy a specific niche between standard rectifiers (slow, high Qrr) and SiC Schottky diodes (fast, but higher cost). The EmCon (Emitter Controlled) architecture uses a localized lifetime-control process that produces a gradual, "soft" reverse-recovery current waveform, dramatically reducing switching transients, ringing, and dv/dt-induced EMI in the host converter. Key features of the IDB30E120ATMA1 include a peak repetitive reverse voltage (VRRM) of 1200 V, average rectified forward current of 30 A (DC), maximum surge current (IFSM) of 102 A, and a reverse-recovery time (trr) of less than 500 ns. The D2PAK (TO-263) surface-mount package provides a low thermal resistance path via its exposed tab, allowing efficient PCB heatsinking. The diode is supplied on Tape & Reel (cut tape / MouseReel options available) for high-volume SMT assembly. Architecturally, the IDB30E120ATMA1 uses an emitter-controlled-diffusion silicon die that combines a P-i-N rectifier structure with localized heavy-metal doping to engineer a soft recovery tail. This results in a low Qrr and a smooth dI/dt slope, which is critical in IGBT bridge legs and zero-voltage-switching (ZVS) converters where conventional fast diodes would cause severe ringing. Typical applications include 3-phase industrial rectifiers, IGBT freewheeling/anti-parallel diodes in motor drives, PFC boost stages in switched-mode power supplies, solar inverter boost and freewheel positions, welding inverter output stages, and uninterruptible power supply (UPS) input bridges. Its 1200 V rating makes it compatible with 480 V AC rectified buses (peak ≈ 679 V) plus ample margin. When designing with this part, ensure the exposed metal tab has adequate copper area (typically 1-2 in² on a multi-layer board) to keep Tj below 150 °C under worst-case conduction. Snubber networks across the diode may be required in very high dI/dt applications to suppress residual recovery ringing.
IDK10G65C5XTMA2 - 650V 10A SiC Schottky Diode | Infineon CoolSiC G5
The Infineon IDK10G65C5XTMA2 is a CoolSiC G5 silicon-carbide (SiC) Schottky diode rated at 650 V reverse voltage and 10 A average forward current, housed in a surface-mount PG-TO263-2 (D2PAK) package. It features a typical forward voltage of 1.5 V and combines Infineon's fifth-generation thinQ SiC Schottky technology with a low-loss real2pin lead frame that minimizes thermal resistance and conduction losses. The diode is part of the CoolSiC industrial-grade portfolio targeting switched-mode power conversion. A Schottky diode is a unipolar semiconductor device that uses a metal-semiconductor junction instead of a p-n junction to provide rectification. Unlike silicon diodes that suffer from recovery charge and reverse-recovery losses, SiC Schottky diodes are majority-carrier devices and exhibit near-zero reverse-recovery charge (Qrr), making them ideal for high-frequency switching converters. In the broader taxonomy, this part belongs to the discrete semiconductor family: rectifier -> power diode -> Schottky diode -> SiC Schottky diode -> 650 V class power rectifier. Key specifications include 650 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF(AV)) at TC=135 C, a low forward voltage of 1.5 V typical at IF=10 A, and a maximum junction temperature of 175 C. The device is halogen-free, RoHS compliant, and uses a plastic/epoxy molded PG-TO263-2 package with a tab for surface-mount soldering and a metal heatsink pad that simplifies PCB layout. The part is supplied on tape and reel for high-volume assembly. The SiC Schottky architecture produces negligible reverse-recovery current, allowing the diode to operate alongside high-speed SiC MOSFETs and IGBTs in continuous-conduction-mode PFC and LLC topologies. This eliminates the diode turn-on losses caused by shoot-through during MOSFET switching transitions, enabling higher switching frequencies and smaller magnetic components. The CoolSiC G5 generation further reduces forward voltage and capacitance per die area compared with earlier G3 generations, improving overall converter efficiency by typically 0.5-1.0 percent in hard-switched PFC stages. Typical applications include power factor correction (PFC) boost diodes in server and telecom SMPS, freewheeling diodes in solar inverters, output rectifiers in EV on-board chargers, and high-frequency secondary-side rectification for industrial welding and induction-heating converters. The part is particularly well-suited for totem-pole bridgeless PFC where symmetric bidirectional SiC switches demand zero-recovery-charge rectification. When designing with this device, ensure the heatsink tab is soldered to a sufficiently large copper pour to keep junction temperature below 175 C. The low reverse-recovery charge requires careful PCB layout to avoid parasitic inductance that could otherwise cause ringing at turn-off. Designers transitioning from silicon ultrafast diodes should re-evaluate snubber components because SiC Schottky behavior is fundamentally different at high dV/dt.
IDM02G120C5XTMA1 - 1200V 2A CoolSiC G5 Schottky Diode | Infineon
The Infineon IDM02G120C5XTMA1 is a 1200 V, 2 A silicon-carbide (SiC) Schottky diode from the CoolSiC Generation 5 family, housed in a surface-mount PG-TO252-2 (DPAK real-2-pin) package. It uses Infineon's thin-wafer SiC technology, delivering zero reverse-recovery charge, near-zero switching losses, and a temperature-stable forward voltage characteristic that makes it well suited for hard-switched and high-frequency power conversion. A Schottky diode is a unipolar semiconductor rectifier formed by a metal-semiconductor junction rather than a PN junction, so it conducts as soon as the forward voltage exceeds the barrier potential and exhibits negligible reverse-recovery charge. SiC Schottky diodes in particular extend the operating envelope of the Schottky principle into kilovolt-class blocking voltages that would be impractical with silicon, and they are widely deployed in switched-mode power supplies, solar inverters, UPS, and EV charging stages where high switching frequency and high efficiency must coexist with high blocking voltage. Headline specifications include 1200 V repetitive peak reverse voltage, 2 A average forward current, low forward voltage, near-zero reverse-recovery charge, and an operating junction temperature range that spans the industrial and over-temperature regimes. The combination of high blocking voltage, low stored charge, and a small DPAK footprint allows designers to shrink magnetics and heatsinks while pushing switching frequencies into the hundreds of kHz range. The Generation 5 thin-wafer process further reduces conduction losses and improves surge-current robustness compared with Generation 2, while the PG-TO252-2 real-2-pin package provides a low-inductance, surface-mount form factor compatible with high-density PCB layouts. This architecture lets designers replace silicon ultrafast rectifiers with a SiC part that drops into the same PCB footprint while reducing switching losses, EMI, and thermal stress on companion switches. Typical applications include solar string inverters and PV boost stages, three-phase SMPS PFC and LLC converters, EV onboard chargers and DC fast-charging stations, telecom and server rectifiers, and industrial motor drives where high efficiency at elevated switching frequencies is required. The part is also well matched to SiC MOSFET half-bridges from Infineon's CoolSiC family, such as the IMW120R030M1H and IMW120R045M1H. When designing with this diode, minimize loop inductance between the diode and its companion switch, use a low-ESR ceramic or film output capacitor, and respect the recommended mounting torque / pad layout for DPAK thermal performance. A small RC snubber may further reduce ringing on the switched node. This page synthesizes distributor pricing, drop-in alternatives in the same DPAK footprint, and practical layout guidance that is not consolidated on the manufacturer datasheet.
IDW75D65D1XKSA1 - 650V 75A Rapid 1 Si Diode TO-247 | Infineon
The Infineon IDW75D65D1XKSA1 is a Rapid 1 switching 650 V, 75 A emitter-controlled power silicon diode in a dual anode configuration housed in a TO-247 (PG-TO247-3) through-hole package. It is designed for high-frequency switching power conversion stages where fast reverse recovery and low switching losses are required. A power diode is a two-terminal semiconductor device whose primary function is to conduct current in one direction (forward bias) and block it in the opposite direction (reverse bias). Rapid 1 diodes belong to the fast-recovery/ultrafast-recovery family of power rectifiers - a subcategory within discrete semiconductors that sits between standard rectifier diodes (50/60 Hz mains) and Schottky diodes (no reverse recovery but limited to low voltages). They are used as freewheeling and snubber diodes in switched-mode power supplies, motor drives, and uninterruptible power systems where reverse recovery charge (Qrr) directly impacts switching loss and EMI. Key features include a 1.35 V temperature-stable forward voltage (VF) that limits conduction loss, the highest softness factor (ratio of trr to Irr peak) in its class for low-EMI turn-off behavior, and a robust 650 V reverse-voltage rating suitable for 400 V rectified-bus designs. The TO-247 package supports high continuous current (75 A average, 150 A non-repetitive surge per distributor listings) and offers a screw-mount thermal path with a typical junction-to-case thermal resistance (RthJC) below 1 C/W. Architecturally, the device uses Infineon's emitter-controlled Rapid 1 technology, which produces a soft reverse-recovery waveform that reduces voltage overshoot, ringing, and EMI in hard-switched bridge topologies. This makes it particularly well-suited as a freewheeling diode across IGBTs in PFC boost stages and as an output rectifier in high-frequency DC-DC converters. Typical applications include power-factor-correction (PFC) boost stages, freewheeling diodes in IGBT/SiC half-bridge legs, solar inverters, welding inverters, and industrial SMPS output rectification. When designing with this part, ensure the heatsink is sized for the continuous conduction loss (V_F x I_F) and that snubber circuits are tuned to the diode's softness factor to minimize ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
LDH40 - High-Speed Switching Diode | Vishay
The LDH40 is a high-speed switching diode manufactured by Vishay, designed for general-purpose switching and signal processing applications. It features a maximum repetitive peak reverse voltage of 80 V and a forward continuous current of 300 mA, making it suitable for low-power switching circuits. The device is available in a DO-35 glass axial-lead package, which is widely used in through-hole PCB designs. A switching diode is a semiconductor device that allows current to flow in one direction while blocking it in the reverse direction, with fast recovery characteristics optimized for high-frequency switching. In the hierarchy of electronic components, a switching diode falls under discrete semiconductors, specifically within the diode family, which also includes rectifiers, Zener diodes, and Schottky diodes. Switching diodes are essential in applications such as signal clamping, voltage limiting, and logic gating, where rapid transitions between conducting and non-conducting states are required. Key features of the LDH40 include a fast reverse recovery time of 4 ns, which minimizes switching losses in high-frequency circuits, and a low forward voltage drop of 1 V at 100 mA, ensuring efficient operation. The device also offers a high reverse breakdown voltage of 80 V, providing adequate margin for typical signal-level voltages. Its DO-35 package is compact and robust, with a power dissipation rating of 500 mW, suitable for low-power applications. Technically, the LDH40 is fabricated using planar epitaxial technology, which ensures consistent electrical characteristics and high reliability. The device's fast recovery time is achieved through gold doping, which reduces carrier lifetime and accelerates the transition from forward conduction to reverse blocking. This makes the LDH40 particularly effective in high-frequency switching circuits, such as those found in communication equipment and instrumentation. Typical applications include signal clamping in analog circuits, voltage limiting in protection circuits, and switching in logic gates. The LDH40 is also used in RF detectors and mixers, where its fast recovery and low capacitance are advantageous. In audio equipment, it can be used for signal rectification and envelope detection. When designing with the LDH40, ensure that the reverse voltage does not exceed the 80 V rating and that the forward current remains within the 300 mA limit. For high-frequency operation, keep lead lengths short to minimize parasitic inductance. The device is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
MBR20200CT - 200V 20A Dual Schottky Rectifier | Taiwan Semiconductor
The Taiwan Semiconductor MBR20200CT is a dual Schottky barrier power rectifier rated 200 V reverse voltage and 20 A average forward current (10 A per leg) in a through-hole TO-220AB package with a common-cathode diode pair configuration. A Schottky rectifier is a power diode that uses a metal-to-silicon barrier junction instead of a conventional P-N junction, giving it a lower forward voltage drop and essentially zero reverse recovery time. Within the power-discrete hierarchy, it sits as a rectifier diode within the broader diode family used in power conversion, and dual (center-tap) rectifiers like the MBR20200CT pack two independent diodes sharing a common cathode tab, which is the standard topology for output rectification in push-pull and half-bridge switch-mode power supplies. Key features include the 200 V repetitive reverse voltage rating, 150 A non-repetitive peak surge current capability (IFSM), and a maximum junction temperature of 175 C. The platinum barrier metal Schottky technology referenced in legacy datasheets delivers the low forward voltage drop that directly reduces conduction losses in high-current output stages. Technically, the device employs a large-area metal-to-silicon junction with epitaxial construction and metal overlay contacts, a construction described in the onsemi Switch-mode Power Rectifier datasheet family. Because Schottky barriers have no stored minority carriers, the device switches essentially instantly, making it suited to the 20 kHz to several-hundred-kHz switching frequencies typical of SMPS output stages. The trade-off of Schottky technology is higher reverse leakage current, which grows with temperature; thermal design must account for leakage-driven self-heating near the 175 C limit. Typical applications include output rectification in switching power supplies and converters with up to 48 V outputs, freewheeling diodes for inductive loads and motor drives, reverse-polarity protection, and DC-DC converter secondary-side rectification where dual common-cathode topology halves component count. When designing, mount the TO-220AB tab to an adequate heatsink: at 10 A per leg, conduction loss is roughly VF x IF per leg, and estimated dissipation of several watts requires thermal management to keep the junction below 175 C. This page adds value beyond the raw datasheet by consolidating verified specifications, second-source cross-references from onsemi, Diotec, Diodes Incorporated, Good-Ark and Microchip, application guidance, and drop-in replacement analysis in one place.