BAP64-05W,115 - Dual PIN Diode 100V SC-70 | NXP
MPN: BAP64-05W,115 β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.32 | $0.32 |
| 10 | $0.27 | $2.70 |
| 100 | $0.19 | $19.00 |
| 500 | $0.15 | $75.00 |
| 1,000 | $0.12 | $120.00 |
BAP64-05W,115 Overview
A PIN diode is a type of radio-frequency semiconductor diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. This intrinsic layer gives the PIN diode a current-controlled resistance characteristic at RF frequencies: at high frequency it behaves as an almost pure resistor whose value is set by the DC forward bias current, while blocking when reverse biased. Within the diode family hierarchy, PIN diodes sit alongside switching and rectifier diodes as RF signal-path elements rather than power-conversion devices.
Key features of the BAP64-05W include high-voltage, current-controlled RF resistance, low diode capacitance for minimal insertion loss in off-state, low forward resistance for low on-state insertion loss, and low series inductance thanks to the compact SC-70 outline. Two planar PIN diodes share a common cathode, allowing series/shunt attenuator and SPDT switch topologies from a single package. According to the NXP datasheet, the device is specified for applications up to 3 GHz.
Architecturally, the planar PIN structure provides low minority-carrier lifetime effects suited to RF attenuation, where the diode operates as a linear RF resistor under forward bias. The common-cathode pairing halves board area versus two discrete SOD-323 parts and keeps parasitic inductance symmetrical, improving attenuator flatness across the band.
Typical applications include RF attenuator stages in wireless infrastructure, antenna switch modules, RF AGC circuits in receivers, and VSWR-protection switching in transmitters. The 100 V rating gives ample margin in 50-ohm systems with high RF swing.
Design consideration: the RF resistance is set by forward bias current, so bias networks must be isolated from the RF path with chokes or high-value resistors to preserve linearity.
This page synthesizes distributor pricing tiers, drop-in alternative comparisons, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BAP64-05W,115 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAR64-05W
β Drop-Inπ Reference alternative (not in catalog)
BAV199W-7
β Drop-Inπ Reference alternative (not in catalog)
BAS70-04WFILM
β Drop-Inπ Reference alternative (not in catalog)
BAP64-05W,115 Maximum Ratings & Electrical Characteristics
| Diode Type | Silicon PIN diode (dual, common cathode) |
| Number of Diodes | 2 |
| Configuration | 1 Pair Common Cathode |
| Reverse Voltage (VR) | 100 V |
| Forward Current (IF) | 100 mA |
| Total Power Dissipation | 240 mW |
| Frequency Range | DC to 3 GHz |
| Application | RF attenuators and switches |
| Series Inductance | Low (per datasheet) |
| Package | SC-70 (SOT323), 3-pin |
| Mounting Type | Surface Mount |
| Packaging | Tape and Reel |
| RoHS Status | Compliant |
| Pin Count | 3 |
BAP64-05W,115 Pin Configuration
| Pin 1 | A1 β Anode of PIN diode D1 |
| Pin 2 | K β Common cathode (cathodes of D1 and D2 tied together) |
| Pin 3 | A2 β Anode of PIN diode D2 |
Typical Applications
BAP64-05W,115 is suitable for 6 applications: RF Attenuator Stages, Antenna Switch Modules, Receiver AGC and Gain Control, Transmitter VSWR Protection, Test and Measurement Front Ends, Wireless Infrastructure Radio Cards.
RF Attenuator Stages
The BAP64-05W,115 is purpose-built for voltage/current-controlled RF attenuators up to 3 GHz. Its two common-cathode PIN diodes implement a series/shunt (pi or T) attenuator network from a single SC-70 package, where forward bias current sets the RF resistance value and thus attenuation depth. With 100 V reverse voltage rating, the diodes withstand high RF peak swings in 50-ohm systems without conducting in the off state, and low diode capacitance keeps off-state feedthrough minimal. The datasheet IP2 curves versus IF at 900 MHz and 1800 MHz let designers select bias current to hold intermodulation below system requirements. Bias injection uses RF chokes or high-value resistors so the control network does not load the RF path.
Recommended
Antenna Switch Modules
In SPDT and multi-throw antenna switch modules for wireless infrastructure, the BAP64-05W,115 provides the switching elements: one PIN diode in series with the active antenna path (forward biased, low rf) and one shunt diode to ground on the isolated port (reverse biased, low capacitance). The common-cathode pairing lets both control lines reference the same DC node, simplifying bias routing on a small PCB. Low series inductance of the SC-70 package preserves the switch isolation floor into the GHz region, and the 100 V rating covers high instantaneous RF voltage at the antenna port. Isolation and insertion loss are tuned via bias current per the datasheet forward-resistance specifications.
Recommended
Receiver AGC and Gain Control
Automatic gain control (AGC) circuits in RF receivers use the BAP64-05W,115 as a current-controlled RF resistor whose value tracks an AGC control voltage, giving smooth, monotonic gain adjustment without relays or stepped attenuators. The PIN diode's near-linear resistance versus bias current behavior over the datasheet-specified IF range minimizes harmonic and intermodulation distortion of the passing signal, which is critical ahead of sensitive mixers and low-noise amplifiers. The dual common-cathode configuration supports balanced AGC in push-pull or differential front ends from one package. Operating the diodes at a few milliamperes of bias keeps the RF resistance in the useful mid-range for wide dynamic-range gain trimming to 3 GHz.
Recommended
Transmitter VSWR Protection
Power amplifiers in transmitters can be damaged when the antenna port sees a high VSWR, raising RF voltage peaks well above the matched-condition level. The BAP64-05W,115 serves as a fast, electronically controlled clamp: its shunt PIN diode, biased by a VSWR-detection loop, conducts only when reflected power raises the port voltage, diverting energy and protecting the PA output stage. The 100 V reverse-voltage rating ensures the diode stays off under normal matched operation, while low capacitance prevents degradation of output matching and efficiency. Because the PIN diode switches in nanoseconds via carrier in the intrinsic layer, it reacts faster than mechanical relays or thermal protection.
Recommended
Test and Measurement Front Ends
Spectrum analyzers, network analyzers and RF test fixtures use PIN diodes like the BAP64-05W,115 for input switching and programmable attenuation between the front-end connector and the first mixer. The device's low off-state capacitance limits signal leakage between ranges, and its 100 V tolerance accommodates accidental overdrive at the input before limiters engage. Because the PIN diode acts as a linear resistor at RF, switched attenuation steps introduce minimal distortion, preserving measurement accuracy for two-tone and intermodulation tests. The compact SC-70 package allows dense switching matrices with short RF traces, keeping parasitic inductance low across the full 3 GHz specified operating range.
Recommended
Wireless Infrastructure Radio Cards
Base-station and point-to-point radio transceiver cards deploy the BAP64-05W,115 in T/R switching, step-attenuator banks and duplex protection functions. The dual common-cathode topology halves component count versus discrete SOD-323 PIN diodes, easing BOM and placement cost on high-volume radio boards, while symmetric package parasitics keep differential paths balanced. Its 100 V, 240 mW ratings suit the moderate RF power levels of receive chains and low-power transmit branches, and the datasheet's IP2 versus IF data at 900 MHz and 1800 MHz supports linearity budgeting for cellular band designs. RoHS-compliant tape-and-reel packaging supports automated SMT assembly lines.
Recommended
Recommended Products Summary
Engineering reference data for BAP64-05W,115 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAR64-05W | BAV199W-7 | BAS70-04WFILM |
|---|---|---|---|---|
| Package | SC-70 (SOT323) | SC-70 (SOT323) - same | SC-70 (SOT323) - same | SC-70 (SOT323) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | Diodes Incorporated | onsemi |
| Diode Technology | PIN (current-controlled RF resistor) | PIN | Fast switching (PN) | Schottky |
| Configuration | Dual, common cathode | Dual, common cathode | Dual, common cathode | Dual, common cathode |
| RF Suitability | Attenuators and switches to 3 GHz | High-frequency switching | General switching, not PIN-linear | General switching/detection |
| New Design Status | Not recommended for new designs | Active | Active | Active |
Key Differentiators
- True PIN technology for linear RF-resistor behavior (vs BAV199W-7)
- 100 V reverse voltage rating (vs BAS70-04WFILM)
- Dual common-cathode integration (vs BAP64-05)
Design Notes
Keep RF traces to the BAP64-05W,115 as short as possible and use ground vias adjacent to pin 2 (common cathode) to minimize the ground inductance path, which dominates the switch isolation floor above 1 GHz. Place the PIN diode directly at the RF node rather than after long traces; every millimeter of 50-ohm line before the diode adds phase shift that unbalances pi-attenuator networks. The SC-70's low series inductance is only realized with a tight layout - a long via-less cathode connection can exceed the package parasitics themselves.
Bias the PIN diode through RF chokes or resistors of 1 kOhm or more so the control network does not load the RF path. Set forward current per the datasheet IP2 curves (characterized at 900 MHz and 1800 MHz, Tamb = 25 C, typical values): higher IF lowers RF resistance and improves linearity but increases bias power. Ensure the current source can both source and sink bias current symmetrically, otherwise the attenuator will clip one half-cycle of high-amplitude RF, causing distortion.
This part is not recommended for new designs - plan a second-source qualification before volume commitment. Do not substitute a Schottky or fast-switching dual diode (for example BAV199W-7 in the same SC-70 footprint) as an RF resistor; the missing intrinsic layer causes high intermodulation in attenuator service. Also note the v3.2 datasheet changed the reverse-current test condition from 100 V to 60 V; leakage figures in older designs' calculations may need rechecking against the current revision.
Compliance Information
RoHS compliant and lead-free per the NXP ',115' ordering suffix convention and DigiKey/Mouser listings. REACH, halogen-free and conflict-minerals status were not stated in the retrieved data - confirm on the NXP product page.
