BAP70-04W,115 - 50V Dual Series PIN Diode | NXP Semiconductors
MPN: BAP70-04W,115 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.33 | $3.30 |
| 100 | $0.22 | $22.00 |
| 500 | $0.17 | $85.00 |
| 1,000 | $0.13 | $130.00 |
BAP70-04W,115 Overview
A PIN diode is a semiconductor device with a lightly doped intrinsic layer between P and N regions. In RF systems, when forward biased it behaves as a nearly linear current-controlled resistor, and when reverse biased it acts as a small, nearly lossless capacitor. This property places the PIN diode at the heart of RF switches, step attenuators, AGC circuits and RF limiter networks within the broader hierarchy of RF discrete components and small-signal switching diodes.
Key features include the series pair configuration, which doubles the effective breakdown voltage for attenuator stacks, low capacitance that preserves isolation at high frequencies, a low forward voltage drop for efficient biasing, and AEC-Q100 automotive qualification indicated by the manufacturer product data. The compact SOT-323 body measures only 2 mm x 1.25 mm x 0.95 mm with a 1.3 mm pitch, enabling dense PCB layouts in RF modules.
The planar silicon construction delivers consistent RF resistance versus forward-current characteristics, which is essential for predictable attenuation steps in PIN-diode attenuator ladders. Junction temperature is specified from -65C to +150C, supporting harsh automotive and industrial environments.
Typical applications include RF attenuators for receiver AGC control, high-voltage RF switching stages, antenna switching in mobile and automotive radio front-ends, and current-controlled RF resistors in test instrumentation.
Design consideration: bias current sets the RF resistance; ensure the driver can supply the required forward current (up to 100 mA) and keep bias networks isolated from the RF path with high-impedance chokes or resistors.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for BAP70-04W,115 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAS70-04W,115
β Drop-Inπ Reference alternative (not in catalog)
BAP70-04,215
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BAP70-04W,115 Maximum Ratings & Electrical Characteristics
| Diode Type | PIN - 1 Pair Series Connection |
| Reverse Voltage (Vr) | 50 V |
| Maximum Forward Current | 100 mA |
| Power Dissipation | 260 mW |
| Diode Capacitance | 0.3 pF at 20 V, 1 MHz |
| Series Resistance | 1.9 ohm at 100 mA, 100 MHz |
| Configuration | Two planar PIN diodes in series |
| Operating Junction Temperature | -65C to +150C |
| Package | SOT-323 (SC-70), 3-pin |
| Package Dimensions | 2 mm x 1.25 mm x 0.95 mm |
| Terminal Pitch | 1.3 mm |
| Mounting Type | Surface Mount (SMD) |
| Qualification | Automotive qualified (AEC-Q100 per NXP product data) |
| Ordering Code Suffix | ,115 (Tape and Reel) |
| Application | RF attenuator / high-voltage current-controlled RF resistor / RF switching |
BAP70-04W,115 Pin Configuration
| Pin 1 | Anode 1 (D1 free terminal) β Free terminal of first series PIN diode |
| Pin 2 | Series junction (K1/A2) β Internal series connection between the two PIN diodes |
| Pin 3 | Cathode 2 (D2 free terminal) β Free terminal of second series PIN diode |
Typical Applications
BAP70-04W,115 is suitable for 6 applications: RF Attenuators (AGC), Automotive RF Front-Ends, Antenna and Filter Switching, RF Limiters and Protectors, Mobile and Portable Radio, Test and Measurement Instrumentation.
RF Attenuators (AGC)
The BAP70-04W,115 fits voltage-controlled and stepped RF attenuators because a forward-biased PIN diode acts as a linear current-controlled resistor: 100 mA of bias produces only 1.9 ohm of series resistance at 100 MHz per NXP datasheet limits, while reducing the current raises the resistance smoothly. The internal series pair shares the RF voltage across two junctions, improving linearity at higher signal levels. Placed in a PI or T attenuator network with current sources feeding the diodes through RF chokes, the part delivers monotonic, low-distortion attenuation steps. Its 0.3 pF off-capacitance keeps the bypass state flat across wide bandwidths.
Recommended
Automotive RF Front-Ends
As an automotive-qualified part with a -65C to +150C junction range, the BAP70-04W,115 suits car radio tuners, telematics antennas and V2X receiver front-ends. The 50 V rating with an internal series pair gives margin against antenna electrostatic discharge and large local signals, while the low 0.3 pF capacitance at 20 V preserves antenna matching networks at FM and higher bands. Supplied in Tape and Reel (,115) for automotive SMT lines, it mounts on a standard 1.3 mm-pitch SOT-323 land pattern. Designers typically pair it with an ESD/decoupling diode and a bias resistor network on the control line.
Recommended
Antenna and Filter Switching
In antenna diversity and filter-bank switching, the BAP70-04W,115 serves as the series RF element. Reverse biased, its 0.3 pF capacitance minimizes off-path leakage at 20 V bias, and the series pair structure doubles blocking voltage for high-swing antenna nodes. Forward biased at up to 100 mA, the 1.9 ohm on-resistance at 100 MHz keeps insertion loss low - about 0.17 dB in a 50-ohm path from the diode alone. Bias feeds should use high-value RF resistors or quarter-wave chokes, and the SOT-323 footprint allows placement directly at the antenna port for shortest parasitic runs.
Recommended
RF Limiters and Protectors
PIN diodes also work as RF power limiters: at high RF drive, charge stored in the intrinsic layer makes the diode conduct and clamp the signal reaching sensitive low-noise amplifiers. The BAP70-04W,115, with its series pair and 100 mA current capability, absorbs part of this limiting action while its low capacitance limits insertion loss in normal small-signal operation. Placing the part ahead of an LNA input with a shunt inductor for DC return provides passive receiver protection against strong interferers, a common requirement in military, test and cellular infrastructure receivers.
Recommended
Mobile and Portable Radio
The ultra-compact SOT-323 body (2 x 1.25 x 0.95 mm) and low profile of the BAP70-04W,115 make it appropriate for handheld radios, IoT RF modules and portable transceivers where board area is scarce. Its low forward voltage and modest 260 mW dissipation mean bias drive stages can be simple transistor or logic-level circuits running from a 3.3 V rail. Designers exploit the current-controlled resistance for automatic gain control in short-range transceiver front-ends, applying a filtered DAC current through the diode pair to trim receiver gain smoothly without generating switching transients.
Recommended
Test and Measurement Instrumentation
Vector network analyzers, RF signal generators and step attenuator modules rely on PIN-diode ladders for electronically switched attenuation. The BAP70-04W,115 provides the repeatable resistance-versus-current characteristic and low capacitance needed for flat frequency response in 50-ohm instrumentation paths. Because the RF resistance tracks bias current predictably (1.9 ohm at 100 mA, 100 MHz per NXP data), calibration tables remain stable over temperature, aided by the -65C to +150C junction range. The SC-70 footprint supports dense multi-section attenuator designs on multilayer RF boards with via-stitched ground planes.
Recommended
Recommended Products Summary
Engineering reference data for BAP70-04W,115 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAS70-04W,115 | BAP70-04,215 |
|---|---|---|---|
| Package | SOT-323 (SC-70), 3-pin | SOT-323 (SC-70) - same | SOT-323 (SC-70) - same |
| Brand | NXP Semiconductors | Nexperia | NXP Semiconductors |
| Diode Type | PIN - 1 pair series connection | Schottky - 1 pair series connection | PIN - 1 pair series connection |
Key Differentiators
- True PIN-diode RF resistance control (vs BAS70-04W,115)
- Series pair raises blocking capability (vs Single PIN diodes in SOT-323)
- Automotive qualification with wide temperature range (vs BAS70-04W,115)
Design Notes
Keep the RF path as short as possible between the SOT-323 pads and the 50-ohm transmission line. The SC-70 land pattern is 1.3 mm pitch, so pads are small; use via-stitched ground pour immediately adjacent and avoid stubs. Place the bias injection resistor or RF choke at 90 degrees to the main line to minimize coupling, and route the bias line away from other RF traces to prevent control-signal leakage into the RF path.
Estimated: at the maximum 100 mA forward bias and a typical PIN-diode forward voltage of about 1 V per diode (two in series, so roughly 2 V total - verify against the datasheet VF curve), dissipation is about 0.2 W, close to the 260 mW package limit. Keep continuous bias current below the maximum when ambient temperature is high, and derate the 260 mW rating per the datasheet power-derating curve above 25C ambient.
Do not substitute a Schottky dual such as BAS70-04W in attenuator positions expecting identical behavior - a Schottky diode does not provide the current-controlled RF resistance of a PIN diode and will distort the RF signal when used as a series attenuator element. Also remember the two diodes are in series internally: pin 2 is the mid junction, not a second independent anode. Applying bias incorrectly across the wrong pins will leave one diode permanently off and destroy attenuator linearity.
Compliance Information
Distributor listings describe the part as automotive qualified. RoHS/REACH/lead-free statements were not present in the retrieved web data - confirm on the NXP product page.
