MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP
MPN: MRF8S21200HSR6 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $142.5 | $142.50 |
| 10 | $132.1 | $1,321.00 |
| 50 | $119.85 | $5,992.50 |
| 100 | $108.2 | $10,820.00 |
| 500 | $96.75 | $48,375.00 |
MRF8S21200HSR6 Overview
An RF power LDMOS transistor is a specialized lateral double-diffused MOSFET optimized for high-frequency, high-power amplification. LDMOS devices sit within the broader category of RF power transistors alongside GaN HEMTs, GaAs MESFETs, and bipolar RF transistors, and they have been the workhorse silicon technology for cellular macro-cell base-station PAs from the 700 MHz band through 2.7 GHz. Their lateral structure places source, drain, and gate on the same surface, enabling high breakdown voltage, excellent thermal conduction through the substrate, and stable gain at RF frequencies where standard power MOSFETs lose efficiency.
Key features of the MRF8S21200HSR6 include integrated dual-section design for Doherty amplifier final-stage use, high breakdown voltage of 65 V for rugged operation into VSWR mismatches, and thermal robustness rated to a maximum junction temperature of 225 C. The lateral MOSFET architecture delivers the gain flatness and intermodulation distortion (IMD) performance required for multi-carrier W-CDMA and LTE signals with 4G-LTE PAPRs of 6-9 dB.
Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station PAs in the 2110-2170 MHz downlink band, especially in Doherty amplifier configurations where the dual-section package simplifies final-stage layout. The ceramic NI-1230HS package provides the low thermal resistance and RF grounding plane necessary for stable Doherty operation with high peak-to-average ratios.
When designing with this device, ensure the PCB mounting flange is properly bolted to a heatsink with adequate thermal compound. Input and output matching networks must be tuned for the 2110-2170 MHz band; the device is not broadband-matched below 2110 MHz or above 2170 MHz. Bias sequencing should follow NXP application note conventions for stable quiescent current under thermal stress.
This page synthesizes real-time distributor pricing from Mouser, the official NXP datasheet, and verified drop-in alternatives not found on a single manufacturer page, giving RF design engineers a single decision point for W-CDMA/LTE base-station PA component selection.
Drop-in alternatives for MRF8S21200HSR6 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF8S21200HSR6 (same form factor and footprint) — differing in Transistor Type, Application, Lead Free Status, Package, Target Modulation.
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Request AlternativesMRF8S21200HSR6 Maximum Ratings & Electrical Characteristics
| Transistor Type | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V |
| Power Gain | 18.1 dB |
| Test Voltage | 28 V |
| Test Current (Quiescent) | 1.4 A |
| Minimum Breakdown Voltage (Drain-Source) | 65 V |
| Maximum Junction Temperature | 225 C |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) |
| Application Class | Class AB, Class C (cellular base station modulation) |
| Peak Reflow Temperature | 260 C |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements |
| Lead Free Status | Lead Free |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) |
| Target Modulation | W-CDMA, LTE, TD-LTE |
MRF8S21200HSR6 Pin Configuration
| Pin 1 | GATE1 — Gate input, section 1 (carrier half) |
| Pin 2 | DRAIN1 — Drain output, section 1 (carrier half) |
| Pin 3 | GND1 — Source / ground, section 1 |
| Pin 4 | GATE2 — Gate input, section 2 (peaking half) |
| Pin 5 | DRAIN2 — Drain output, section 2 (peaking half) |
| Pin 6 | GND2 — Source / ground, section 2 |
| Pin 7 | FLANGE — Ceramic package flange / heatsink surface (electrically ground) |
Safe Operating Area (MRF8S21200HSR6 LDMOS)
Typical Applications
MRF8S21200HSR6 is suitable for 6 applications: W-CDMA Macro-Cell Base Station PA, LTE Band 1 / n1 Final Stage, Doherty Pallet for Macro Base Station, Multi-Carrier Power Amplifier, SMR (Specialized Mobile Radio) Repeater PA, Industrial RF Heating / Plasma Generator.
W-CDMA Macro-Cell Base Station PA
The MRF8S21200HSR6 is specifically designed as the final-stage device in 2110-2170 MHz W-CDMA base-station power amplifiers. Its 48 W average output power at 28 V handles the high PAPR of 4-carrier W-CDMA signals (>7 dB) while the 18.1 dB gain reduces driver-stage complexity. Placed at the output of a 2.1 GHz Doherty amplifier pallet, the device's 65 V breakdown delivers VSWR-mismatch ruggedness at the antenna port. The ceramic NI-1230HS surface-mount package enables compact pallet designs where the heatsink is integrated via thermal vias in the ceramic substrate rather than via bolted flanges, reducing assembly cost in volume production.
Recommended
LTE Band 1 / n1 Final Stage
In LTE Band 1 and 5G NR n1 macro-cell transmitters (2110-2170 MHz), the MRF8S21200HSR6 serves as the final-stage LDMOS power device in a Doherty configuration. The 48 W average output power covers LTE 6-dB PAPR and NR 9-dB PAPR signals when preceded by digital crest-factor reduction (CFR). The 1.4 A quiescent bias is easily set via NXP application-note reference bias circuits. Per the NXP datasheet, the device's intermodulation distortion under multi-carrier LTE drive is optimized for 4G-LTE spectral emission masks, and the 65 V breakdown ensures survival during antenna VSWR faults that would destroy a less-rugged device.
Recommended
Doherty Pallet for Macro Base Station
The MRF8S21200HSR6 is the canonical Doherty-final device in 2.1 GHz macro-cell Doherty amplifier pallets. As a dual-section LDMOS in a single ceramic NI-1230HS package, it works in pairs (carrier and peaking) with carefully tuned 90-degree offset lines, enabling 6-9 dB PAPR support with high back-off efficiency. The 48 W average saturated power output aligns with typical 80 W (PEP) Doherty target powers, and the 28 V bias rail is the standard telecommunications PA supply. Designers place the input splitter, output combiner, and phase-compensation lines on the ceramic pallet substrate, with the LDMOS bolted to the pallet heatsink.
Recommended
Multi-Carrier Power Amplifier
Multi-carrier power amplifiers (MCPAs) combine two or more W-CDMA or LTE carriers through a single PA, requiring wide-bandwidth, high-linearity final-stage devices. The MRF8S21200HSR6 with its 2110-2170 MHz bandwidth, 65 V breakdown, and low IM3 under multi-carrier drive per the NXP datasheet is well suited for MCPA service. Its 48 W average output power easily delivers 4-carrier LTE total power, and the ceramic NI-1230HS package provides the low thermal resistance and compact layout needed for tower-top or ground-mounted MCPA units where PCB real estate is constrained.
Recommended
SMR (Specialized Mobile Radio) Repeater PA
The MRF8S21200HSR6 is suited for 2110-2170 MHz commercial SMR/PAMR power amplifier boards and the downlink PA of cellular repeaters. The 48 W average output power at 28 V and the 18.1 dB gain target the typical commercial cellular SMR power level with headroom for insertion losses in the filter network. The 65 V breakdown is important in repeater service where antenna cable VSWR faults can deliver RF from an adjacent cell onto the output port. Per the NXP datasheet's thermal ratings, the ceramic package sustains 225 C junction temperature for emergency-only operation.
Recommended
Industrial RF Heating / Plasma Generator
Beyond telecommunications, the MRF8S21200HSR6 can be repurposed as an RF energy source for industrial plasma generation, RF heating, and RF drying at 2.1 GHz. Continuous-mode operation at 48 W with a 65 V breakdown and 225 C maximum junction temperature enables hours-long industrial RF plasma torch service. The NXP datasheet recommends keeping junction temperature below 200 C for sustained life, so the ceramic NI-1230HS package must be heatsunk adequately. Designers using this device for plasma service should review NXP application notes on CW versus pulsed operation and adjust the bias point for clean continuous-wave performance.
Recommended
Recommended Products Summary
Engineering reference data for MRF8S21200HSR6 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF8S21200HR6 |
|---|---|---|
| Package | NI-1230HS (ceramic SMT) | NI-1230 (bolt-down flange) |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz |
| Output Power (W-CDMA Avg) | 48 W | 48 W |
| Power Gain | 18.1 dB | 18.1 dB |
| Breakdown Voltage (Vds) | 65 V | 65 V |
| Test Voltage / Current | 28 V / 1.4 A | 28 V / 1.4 A |
| Maximum Junction Temperature | 225 C | 225 C |
| Mounting | Surface Mount (ceramic) | Bolt-down flange |
Key Differentiators
- Surface-mount ceramic NI-1230HS package enables low-cost ceramic-pallet assembly (vs MRF8S21200HR6)
- Same silicon LDMOS die and 48 W output as the bolt-down HR6 (vs MRF8S21200HR6)
- 65 V breakdown provides VSWR-mismatch ruggedness (vs MRF8S21200HR6)
Design Notes
The MRF8S21200HSR6 ceramic NI-1230HS package requires bolting to a heatsink with thermal-interface material to keep junction temperature below 200 C for continuous Doherty service. Per the NXP datasheet, the maximum junction is 225 C. Under 48 W W-CDMA average output at 28 V, typical drain efficiency is 30-35%, implying 100-130 W of dissipation that must be removed through the pallet heatsink. Use silver-loaded thermal compound and torque per NXP application note for low thermal resistance.
The MRF8S21200HSR6 must be mounted on a ceramic substrate with controlled-impedance microstrip lines for input and output matching. The gate and drain leads are short flat tabs on the package; use a PCB-to-package bond-wire free bond on ceramic pallets (or wire-bond for prototype builds). Keep the gate and drain microstrip routing isolated by at least 5 mm of ceramic ground plane to prevent output-to-input coupling that creates parasitic oscillation under high gain.
Do not operate the MRF8S21200HSR6 outside the 2110-2170 MHz band without retuning the input and output matching networks; the silicon LDMOS die performs poorly below 2 GHz and above 2.3 GHz. Do not exceed the 65 V drain breakdown under any drive condition - antenna VSWR faults can briefly push drain voltage well above the 28 V operating rail. Always sequence the gate bias ON before the drain supply is applied, and sequence drain supply OFF before gate bias, to avoid forward-biasing the gate-source junction.
Design the PCB layout to match the NI-1230HS ceramic package footprint exactly. Use Rogers RO4350B or similar high-frequency ceramic-filled PTFE substrate for the carrier board, with a 50-ohm microstrip width tuned to the substrate thickness. Place gate and drain bypass capacitors (typically 100 pF NPO and 1 nF X7R ceramic) directly at the device pins to suppress bias-network oscillation. A ground-via fence around both microstrip traces improves high-frequency stability.
For Doherty amplifier builds using two MRF8S21200HSR6 (or one MRF8S21200HR6 plus MRF8S21200HSR6) devices, the gate splitter and output combiner need precise 90-degree phase alignment; off-the-shelf rat-race or branch-line couplers are typical. Apply the peaking amplifier's gate bias (off in idle) so that the peaking transistor turns on only at the Doherty transition point - typically 6-9 dB below the saturation. Carefully tune the offset-line lengths to maintain Doherty efficiency above 40% at 8 dB back-off.
Compliance Information
RoHS compliant per NXP product page; lead-free NI-1230HS package. Halogen-free status: not stated in provided verified data - marked unknown. AEC-Q100 not applicable for telecom RF power transistor.
