MOSFETs
Products (157)
2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon
The Infineon 2N7002H6327XTSA2 is an N-channel enhancement-mode OptiMOS small-signal MOSFET rated at 60 V VDS and 300 mA continuous drain current, housed in a PG-SOT23 (SOT-23-3) surface-mount package. The device delivers a maximum on-state resistance of 3 ohm at VGS = 10 V, achieving low conduction loss for a sub-1 A signal MOSFET while preserving fast switching edges. The 2N7002H6327XTSA2 is the automotive-qualified, tape-and-reel-packaged variant of the classic 2N7002 series, offering production-grade reliability in a footprint-compatible upgrade. An N-channel enhancement-mode MOSFET is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates an inversion layer, allowing current to flow from drain to source. Within the broader semiconductor hierarchy, this part belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, the discrete transistor category, and ultimately the power-switching semiconductor class. Small-signal MOSFETs like the 2N7002 are optimized for sub-1 A switching rather than power conversion, making them ubiquitous in logic-level translation, level shifting, relay driving, and low-side load switching. Key features of the 2N7002H6327XTSA2 include a gate threshold voltage typically around 2.5 V, low gate charge for fast switching at low drive currents, and an ESD-protected gate structure per Infineon's OptiMOS process. The device's 500 mW power dissipation rating and standard SOT-23-3 footprint enable placement adjacent to microcontrollers or ASICs. Its logic-level compatibility with 3.3 V and 5 V microcontrollers makes it a drop-in companion for GPIO-driven loads. The 2N7002H6327XTSA2 is built on Infineon's planar OptiMOS technology, optimized for low on-resistance per unit area at small die sizes. The result is a robust, production-proven process node widely second-sourced across the industry. Compared with older BJT-based 2N7000 parts, the MOSFET architecture eliminates base current and provides higher input impedance, simplifying microcontroller interface design. Typical applications include low-side switching for relays, solenoids, LEDs, and small DC motors; level shifters between 3.3 V microcontrollers and 5 V or 12 V loads; signal multiplexing and analog switching; battery protection circuits; and as a generic interface buffer in industrial controls and consumer electronics. When designing with this part, ensure VGS does not exceed the maximum gate-source voltage rating and use a gate resistor (typically 100 ohm) to limit ringing. For inductive loads, add a flyback diode to protect the drain from voltage transients exceeding 60 V. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet.
2N7002L - 60V N-Channel MOSFET, SOT-23 | onsemi
The 2N7002L is an N-channel enhancement-mode MOSFET manufactured by onsemi using high cell density, trench MOSFET technology. It is designed for low-voltage, low-current switching applications, offering a drain-source voltage rating of 60V, a continuous drain current of 115mA, and a low on-state resistance of 7.5Ī© (typical). The device comes in a compact SOT-23-3 surface-mount package, making it ideal for space-constrained designs. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor that uses an electric field to control the conductivity of a channel. The 2N7002L is an enhancement-mode device, meaning it is normally off and requires a positive gate-source voltage to conduct. It is a logic-level MOSFET, fully enhancing with a gate drive of 5V, which simplifies interfacing with microcontrollers and other logic circuits. As a small-signal MOSFET, it sits in the hierarchy: MOSFET -> field-effect transistor -> transistor -> semiconductor device. Key features of the 2N7002L include a maximum gate-source voltage of Ā±20V, a threshold voltage range of 1V to 2.5V, and a maximum power dissipation of 225mW (or 200mW per DigiKey). The device is RoHS compliant, lead-free, and halogen-free, making it suitable for environmentally conscious designs. Its fast switching performance and ruggedness make it reliable for various switching tasks. Technically, the 2N7002L is produced using trench MOSFET technology, which minimizes on-state resistance while providing rugged and fast switching. The device has a total gate charge of [DATA_NEEDED: total gate charge] and an input capacitance of [DATA_NEEDED: input capacitance], which are important for high-frequency switching applications. The SOT-23 package offers a small footprint with a thermal resistance of [DATA_NEEDED: thermal resistance], allowing for efficient heat dissipation in low-power applications. Typical applications include small servo motor control, power MOSFET gate drivers, logic-level level shifting, load switching, and DC-DC converter circuits. The 2N7002L is particularly suited for battery-powered portable devices, where its low threshold voltage and low on-resistance help minimize power losses. When designing with the 2N7002L, ensure that the gate-source voltage does not exceed the Ā±20V rating, and consider the power dissipation limits to avoid thermal issues. For higher current applications, consider alternative MOSFETs with higher current ratings.
2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi
The onsemi 2N7002LT1G is a 60 V N-channel enhancement-mode small-signal MOSFET rated for 115 mA continuous drain current and 225 mW power dissipation in the compact 3-pin SOT-23-3 (TO-236) surface-mount package. Its maximum RDS(on) of 7.5 ohms at VGS = 5 V makes it a reliable low-side switch for general-purpose logic-level load switching. A small-signal MOSFET is a field-effect transistor optimized for switching and amplifying low currents rather than handling motor- or power-converter-level loads. Within the power semiconductor hierarchy it sits below power MOSFETs and IGBTs, serving as the workhorse transistor that interfaces microcontroller or logic GPIO outputs to loads such as LEDs, relays, resistive heaters, and switched rails. The 2N7002 family is one of the most widely used small-signal N-channel MOSFETs in the industry, which makes sourcing and cross-referencing straightforward. Key features of the 2N7002LT1G include its 60 V drain-source breakdown voltage (V(BR)DSS), which provides generous headroom for 12 V and 24 V industrial rails, its enhancement-mode gate structure that switches fully off at VGS = 0 V, and low gate charge that allows direct drive from 3.3 V or 5 V logic with a simple series resistor. The lead-free, RoHS-compliant construction supports modern environmental requirements. Technologically, the device uses onsemi small-signal MOSFET cell geometry to balance RDS(on), gate charge, and capacitance. The SOT-23 package offers a thermal path adequate for the rated 225 mW at typical ambient conditions, and the tiny 2.9 mm x 1.3 mm footprint supports dense board layouts. Typical applications include low-side load switching in battery-powered devices, relay and LED drivers, level-shifting and pull-down networks, battery-protection circuits, and general power-management switching in consumer and industrial products. A key design consideration: at 115 mA with a large source-drain voltage drop, power dissipation (I^2 x RDS(on)) approaches the package limit, so verify thermal margins at worst-case load. This page synthesizes distributor pricing, drop-in alternatives, cross-references, and practical design notes not found in the manufacturer datasheet alone.
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mĪ© Power MOSFET | Infineon
The Infineon BSC011N03LSIATMA1 is an N-channel 30 V OptiMOSā¢ power MOSFET featuring an ultra-low on-state resistance of 1.1 mĪ© (typical at 10 V VGS) in a compact PG-TDSON-8-7 surface-mount package. It is rated for 37 A continuous drain current at 25 Ā°C case ambient and 100 A pulsed, with a maximum power dissipation of 2.5 W at TA and 96 W at TC. An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode MOSFET optimized for low-voltage (typically ā¤100 V) synchronous rectification, DC-DC conversion, and hot-swap applications. As a member of Infineon's OptiMOS 30 V family, the BSC011N03LSI sits within the broader power MOSFET hypernym hierarchy of discrete semiconductors, and is engineered for highest power density and energy efficiency at the lowest specific on-resistance. Key specifications include 30 V VDS, Ā±20 V VGS, an integrated Schottky-like monolithically optimized body diode, and an operating junction temperature range of -55 Ā°C to +150 Ā°C. The PG-TDSON-8-7 package provides an exposed drain pad (pin 5-8) for low thermal resistance, enabling efficient heat extraction in space-constrained designs. The part is fully RoHS compliant and qualified to JEDEC standards for moisture sensitivity level 1. The OptiMOS 30V cell uses an advanced trench gate structure that minimizes both on-state resistance (RDS(on)) and gate charge (Qg). The low figure-of-merit (FOM = RDS(on) Ć Qg) translates directly into reduced switching and conduction losses in high-frequency SMPS, where every milliohm of RDS(on) saved improves efficiency by measurable percentage points at high load. Typical applications include synchronous rectification in 12 V buck and POL converters, hot-swap and OR-ing circuits in server/telecom power systems, battery protection and load switching in 1-3S lithium-ion packs, and motor drive low-side switches in industrial BLDC/robotic systems. When designing with the BSC011N03LSIATMA1, ensure VGS is driven to at least 10 V for full enhancement. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended ā„100 mmĀ² on a 4-layer board) to keep junction temperature below 150 Ā°C under worst-case load. This page synthesizes distributor pricing, drop-in same-brand alternatives, thermal design guidance, and pinout information not consolidated in the manufacturer datasheet, optimized for engineers selecting 30 V power MOSFETs for DC-DC and hot-swap designs.
BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon
Infineon BSC014N06NSATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated at 100 A continuous drain current (Tc) and 30 A (Ta), housed in a SuperSO8 / PG-TDSON-8-17 (5x6 mm) surface-mount package. It delivers an ultra-low typical on-resistance of 1.4 mOhm at VGS=10 V and supports +/-20 V gate-source voltage, with 2.5 W (Ta) / 156 W (Tc) power dissipation. According to Infineon's OptiMOS 5 datasheet, this part targets high-efficiency synchronous rectification, DC-DC conversion, and motor-drive stages where lowest RDS(on) x Qg FOM directly reduces conduction and switching losses. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device that conducts current between drain and source when a sufficient positive gate-source voltage is applied. Power MOSFETs sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor, and are the dominant switching element in sub-200 V, sub-100 kHz SMPS, motor-control, and hot-swap designs because they switch faster, are easier to drive, and exhibit lower conduction loss than bipolar devices at low voltages. Key features include 1.4 mOhm typical RDS(on) (10 V VGS), +/-20 V maximum gate-source voltage with +/-10 V recommended drive, 60 V drain-source breakdown, and a SuperSO8 5x6 mm footprint that minimizes PCB area and provides a low thermal resistance path via the exposed drain pad. The OptiMOS 5 technology platform improves Figure of Merit (RDS(on) x Qg) by typically 30-50% versus prior OptiMOS generations, directly translating to lower switching losses at high frequency. Internally the device uses a shielded-gate trench MOSFET cell architecture optimized for low output charge (Qoss) and low gate charge (Qg). The 5x6 mm SuperSO8 footprint is footprint-compatible with industry-standard Power-SO8 / LFPAK packages from other vendors, simplifying second-sourcing. The exposed drain pad provides direct PCB heatsinking, enabling 156 W Tc dissipation with proper thermal via design. Typical applications include synchronous-rectifier stages in 48 V telecom and server buck converters, high-current OR-ing and hot-swap controllers, brushless DC motor drives, battery management protection FETs in 12 V/24 V e-mobility, and Class-D audio amplifier output stages. Each application benefits from the very low RDS(on) and the small SuperSO8 footprint. When designing with this part, ensure the gate driver can source/sink adequate peak current (Qg and Qgd are key) and that the PCB layout uses sufficient copper area and thermal vias under the exposed pad to achieve the rated 156 W Tc dissipation. Above 50 A continuous, derate aggressively or use a smaller SuperSO8 footprint than DPAK alternatives.
BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC021N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 trench technology, delivering 80 V VDS, a maximum drain current of 226 A (Tc), 214 W power dissipation (Tc), and an industry-leading R_DS(on) max of 2.1 mĪ© in a SuperSO8 5x6 (PG-TSON-8-3) surface-mount package. The part is supplied on Tape-and-Reel (T&R) as a fully automotive-grade capable power stage. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics: a voltage-controlled three-terminal device in which the gate-source voltage modulates a conductive channel between drain and source. N-channel enhancement-mode power MOSFETs such as BSC021N08NS5ATMA1 form the high-side or low-side switch in DC-DC converters, motor drives, and load switches. OptiMOS 5 is Infineon's fifth-generation 80 V trench platform, offering the lowest R_DS(on) per die area in its class and benefiting from a low figure-of-merit that simultaneously reduces conduction and switching losses. Key features include 80 V drain-source breakdown voltage, 2.1 mĪ© maximum R_DS(on) at V_GS = 10 V, 226 A continuous drain current at case temperature 25 Ā°C, ultra-low gate charge Q_G for fast switching, an avalanche-rated single-pulse body diode, 100 % R_G-tested gates for parallel operation, and Pb-free lead plating plus RoHS compliance. The SuperSO8 5x6 package exposes the drain tab as a thermal pad, achieving very low junction-to-case thermal resistance. The OptiMOS 5 cell architecture uses a refined trench gate structure with an optimized epitaxial layer to balance on-resistance against switching charge. Compared with OptiMOS 3 predecessors, the FOM (R_DS(on) Ć Q_G) is reduced by roughly 50 %, enabling higher switching frequencies and smaller magnetics in telecom, server, and e-mobility DC-DC stages. Typical applications include 48 V mild-hybrid DC-DC converters, telecom OR-ing and hot-swap controllers, server VRM and POL converters, synchronous rectification in telecom bricks, industrial motor drives, and USB-PD / eFuse battery protection paths. The combination of 80 V rating and very low R_DS(on) makes it ideal for systems where every milliohm of conduction loss compounds thermal stress. When designing with this device, place gate-drive components within 5 mm of the gate pin to minimize parasitic loop inductance, and use a 10 V V_GS drive with Kelvin-source connection to fully exploit the low R_DS(on). Heatsink selection must account for the SuperSO8 thermal pad - a 1 oz copper pour of at least 6 cmĀ² is the datasheet reference condition for the rated R_thJA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet.
BSC027N04LSGATMA1 - 40V 100A 2.7mĪ© OptiMOS 3 N-MOSFET | Infineon
The Infineon BSC027N04LSGATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated at 40 V VDS and offering an ultra-low typical on-resistance of 2.7 mĪ© in a PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. It supports continuous drain current up to 24 A at Ta (25Ā°C) and 100 A at Tc (25Ā°C), with power dissipation ratings of 2.5 W (Ta) and 83 W (Tc). An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled power switch in which a positive gate-source voltage creates an n-type conduction channel between drain and source. The OptiMOS 3 family belongs to the hierarchy power MOSFET -> discrete semiconductor -> transistor -> semiconductor, and is engineered for synchronous rectification, DC-DC conversion, and high-frequency switching power stages where low conduction loss, low gate charge, and small footprint are required. Key features include an industry-leading 2.7 mĪ© maximum RDS(on) at VGS=10 V, low gate charge (Qg) optimized for high-frequency operation, a logic-level-compatible gate drive threshold, and an exposed-drain SuperSO8 5x6 pad that reduces thermal resistance to the PCB. The TDSON-8 footprint is shared across the OptiMOS 3 family, giving designers a uniform PCB land pattern for migration between current and voltage grades. The device is built on Infineon's trench MOSFET process, which minimizes cell pitch and maximizes silicon utilization to deliver class-leading figure-of-merit (FOM = RDS(on) Ć Qg). The integrated Schottky-like body diode and dv/dt ruggedness further simplify use in half-bridge and synchronous buck topologies. Typical applications include synchronous rectification in 12 V buck converters for server and telecom POL rails, OR-ing and hot-swap switches on 24 V industrial buses, motor drive H-bridges in 12 V/24 V brushless DC fans and tools, battery protection circuits in 4S-10S Li-ion packs, and USB-PD / Type-C high-current load switches. When designing with the BSC027N04LSGATMA1, place it on a copper pour of at least 25 mmĀ² per side to keep junction temperature within SOA, and use a 10 V VGS drive to achieve the published 2.7 mĪ© RDS(on). Avoid operating continuously near the 100 A Tc limit - derate to roughly 50-60 % of that figure in space-constrained layouts to preserve long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC030N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOSā¢ 5 technology, rated at 80 V drain-to-source voltage and 100 A continuous drain current (Tc), with a maximum on-resistance of 3.0 mĪ© at 10 V VGS, housed in a SuperSO8 (PG-TDSON-8-7) 5x6 mm surface-mount package. The device is engineered for high-frequency synchronous rectification and switching converter applications where it delivers up to 44% reduction in output capacitance and 44% reduction in RDS(on) versus the previous generation. The combination of 100 A continuous current capability and an ultra-low figure-of-merit (RDS(on) Ć Qg) supports highest system efficiency, reduced switching and conduction losses, and less paralleling. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switched-mode power supplies, motor drives, and battery protection circuits. Within the broader component taxonomy it sits as a subtype of field-effect transistor (FET) ā transistor ā discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low-voltage, high-current applications such as 48 V telecom rails, server DC-DC converters, and automotive high-current loads. Key differentiating features of the BSC030N08NS5 include 3.0 mĪ© maximum on-resistance at VGS=10 V, an ID max rating of 100 A (Tc) with 161 A pulsed capability per the Infineon family datasheet, low voltage overshoot during switching transients, and a 2.5 W power dissipation rating on the standard 1.5 mm FR4 reference PCB (139 W on the case). The device supports 12 V standard gate-drive logic and is suitable for high-side and low-side positions in half-bridge, full-bridge, and buck/boost topologies. At the architectural level, the OptiMOS 5 cell structure reduces gate charge Qg and miller plateau charge Qgd compared with prior generations, lowering switching losses at high di/dt. The 5x6 mm SuperSO8 land pattern offers a thermal resistance compatible with direct copper cooling on standard PCB designs, and the package's low-inductance source connection enables cleaner switching waveforms at multi-hundred-kHz operation. Typical applications include synchronous rectification in 48 V to point-of-load converters, server and telecom DC-DC stages, battery management protection MOSFETs in 12 V/24 V/48 V systems, hot-swap controllers, motor-drive H-bridges, and high-current load switches in industrial automation. In these roles, the BSC030N08NS5ATMA1 acts as the synchronous rectifier that replaces the lossy Schottky diode, dramatically improving light-load and full-load efficiency. Designers should observe the absolute maximum ratings carefully: VDS=80 V, VGS=Ā±20 V (transient), ID=100 A continuous at TC=25 Ā°C with appropriate PCB copper area, and TJ max of 150 Ā°C. Operating above 50 Ā°C case temperature requires derating per the datasheet Diagram 2. A low-ESR gate-drive loop, a 10 Ī© gate resistor, and adequate VGS decoupling are recommended for clean switching in multi-MHz designs. This page synthesizes distributor pricing as of 2026-09-11, drop-in alternatives sourced from the Infineon OptiMOS 5 family and authorized cross-references, and practical design notes not found in the manufacturer datasheet alone.
BSC032N04LSATMA1 - 40V 3.2mĪ© OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC032N04LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 40V platform, offering a maximum drain-source voltage of 40V, continuous drain current of 21A (Ta) / 98A (Tc), and an industry-leading ultra-low on-resistance of 3.2 mĪ© maximum at 10V VGS. It is housed in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package with an exposed drain pad for low thermal resistance. What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify DC-DC, motor-drive, and load-management signals. N-channel variants conduct between drain and source when a positive gate voltage is applied, and within the broader hierarchy they belong to discrete semiconductors, then to transistors, and finally to active electronic components. OptiMOS 5 is Infineon's fifth-generation 40V trench MOSFET process, optimized for ultra-low RDS(on) and low gate charge to minimize conduction and switching losses. Key features of the BSC032N04LSATMA1 include 3.2 mĪ© max RDS(on) at VGS=10V, 52W maximum power dissipation at Tc=25Ā°C, and a SuperSO8 package with a Kelvin-source connection that suppresses gate-loop inductance for cleaner switching waveforms. The part is rated for operation from -55Ā°C to +175Ā°C junction temperature and is fully RoHS compliant with lead-free (Pb-free) terminal plating. The OptiMOS 5 cell geometry uses a deep-trench structure with a refined epi profile, achieving lower figure-of-merit (FOM = RDS(on) Ć Qg) than earlier OptiMOS generations. This directly reduces switching losses in hard-switched topologies and conduction losses in synchronous-rectification positions, where the part typically replaces Schottky diodes for higher efficiency. Typical applications include synchronous rectification in switched-mode power supplies (SMPS) for servers, desktops and telecom bricks, OR-ing and hot-swap controllers in 12V/24V distributed-power systems, motor-drive H-bridges for 12V brushless DC fans and small pumps, and battery-protection circuits in power tools and e-bikes. The 40V drain rating provides generous headroom above 12V and 24V nominal rails. When designing with this MOSFET, always observe the SOA (safe operating area) curve provided in the datasheet at the intended VDS, ID, and pulse duration. A 10V VGS drive is recommended for full RDS(on) performance; lower gate voltages will significantly raise conduction loss. Use the exposed pad as the primary thermal path. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-source reference for the BSC032N04LSATMA1.
BSC039N06NSATMA1 - 60V 3.9mĪ© 100A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC039N06NSATMA1 is an N-channel OptiMOS 5 power MOSFET rated for 60 V VDS, 19 A continuous drain current at TA (100 A pulsed at TC), and a maximum on-resistance of 3.9 mĪ© at 10 V VGS, housed in a surface-mount PG-TDSON-8-6 (TDSON EP 5x6) package. The device is part of Infineon's OptiMOS 5 60 V family, optimized for high-frequency, high-efficiency synchronous rectification and OR-ing applications in telecom, server, and industrial systems. A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that uses an insulated gate (here, a Si trench gate) to modulate the conduction channel between source and drain. OptiMOS 5 represents Infineon's 5th-generation 60 V trench process, which pushes the Figure of Merit (RDS(on) Ć Qg) substantially below previous generations. Within the power-management IC hierarchy, this part sits below the system-level PMIC and above the discrete diode/passive layer, serving as the synchronous rectifying switch in buck converters, the high-side switch in motor half-bridges, and the protection element in hot-swap/OR-ing circuits. Key features of the BSC039N06NSATMA1 include an ultra-low typical RDS(on) of 3.9 mĪ© at VGS=10 V, a pulsed drain current of 100 A (TC-limited), 2.5 W power dissipation at TA, 69 W at TC, and an operating junction temperature range of -55Ā°C to +150Ā°C. The PG-TDSON-8-6 package provides an exposed-drain thermal pad (pin 1, 5, 6, 7, 8 internally bonded) for low RthJA, typically below 1Ā°C/W with 1 inĀ² of FR-4 copper. The gate is logic-level compatible down to 4.5 V VGS for direct MCU drive. Architecturally, the device uses a charge-balanced trench gate and a low-resistance substrate, achieving low on-state loss and excellent switching FOM. Compared to the OptiMOS 3 generation, RDS(on) is reduced by roughly 30% at the same die area, while Qgd and Qrr are significantly improved, allowing >100 kHz hard-switched operation. The device is 100% avalanche-tested (UIS) and is RoHS compliant. Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, hot-swap and OR-ing FETs in redundant power systems, motor drive half-bridges for 12 V/24 V BLDC fans and tools, and high-current USB-PD/eFuse protection paths. The wide SOA and low thermal impedance make it suitable for both continuous conduction and pulsed avalanche events. When designing with this part, always verify that the operating VDS stays below 60 V including transients, derate to 80% of pulsed current for repetitive loads, and minimize parasitic source inductance with Kelvin-source PCB layout. Use a gate driver with at least 1 A peak source/sink capability and a gate resistor in the 2-10 Ī© range to control dV/dt-induced ringing. This page synthesizes distributor pricing (DigiKey, Mouser, Octopart), drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers an at-a-glance selection reference for the OptiMOS 5 60 V family.
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC040N10NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 platform, rated at 100 V VDS max and 4 mOhm maximum on-resistance, packaged in the SuperSO8 5x6 outline (also referenced as PG-TDSON-8-7 / TDSON EP-8). It delivers up to 100 A continuous drain current at 25 C case temperature (and up to 136 A per the Infineon parametric page), with 2.5 W power dissipation at ambient and 139 W at case temperature, making it one of the lowest-RDS(on) parts in the 100 V class in this footprint. What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor is the workhorse switching element of modern power electronics. The N-channel variant conducts when the gate is pulled above the source by VGS(th); for power applications, the MOSFET category encompasses low-voltage signal MOSFETs, standard MOSFETs, and high-power MOSFETs, the latter being the relevant hypernym for this part. Within discrete semiconductors, this device sits in the power MOSFET tier optimized for switching converters, motor drives, and synchronous rectification. Key features include the OptiMOS 5 technology generation, which delivers up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation, enabling higher switching frequencies and higher system efficiency. The part is optimized for synchronous rectification in switched-mode power supplies, where it serves as the low-side FET. Its low Qg and Qgd support fast turn-on/turn-off transitions, reducing switching losses and allowing designers to shrink magnetics. Typical applications include synchronous rectification in 48 V telecom and server DC-DC point-of-load converters, primary-side switching in telecom bricks, motor drive half-bridges in industrial and automotive 12 V/24 V systems, hot-swap and OR-ing circuits, and battery protection in e-mobility. The part is automotive-grade qualified (AEC-Q101 family), making it suitable for body electronics and powertrain peripherals. When designing with this device, ensure the gate driver can source/sink sufficient peak current to quickly charge Qg and avoid linear-region losses during switching transitions. Thermal management is critical: at high continuous current, use multiple thermal vias under the exposed pad and adequate copper pour on both top and inner layers. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping procurement and design engineers evaluate the BSC040N10NS5ATMA1 for production.
BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
Infineon BSC0504NSIATMA1 is an N-channel power MOSFET rated for 30 V, with continuous drain current of 21 A at case temperature Ta and 72 A at Tc, and power dissipation of 2.5 W at Ta and 30 W at Tc. It uses an OptiMOS 5 30 V architecture in the surface-mount PG-TDSON-8-6 package. The verified distributor data identifies it as a single N-channel MOSFET designed for high-efficiency power switching. A power MOSFET is a voltage-controlled transistor used to switch or conduct current in power-conversion and motor-control circuits. The N-channel designation means conduction occurs between its drain and source terminals when a positive gate-to-source voltage is applied. Within the hierarchy, the device belongs to the MOSFET family, the broader transistor category, and the power-semiconductor product class. Its low-voltage, high-current construction targets applications requiring compact switching stages and low conduction losses. The verified headline ratings include a 30 V drain-to-source rating, 21 A at Ta, 72 A at Tc, 2.5 W dissipation at Ta, and 30 W at Tc. The package is identified by distributor listings as PG-TDSON-8-6, a surface-mount package with an exposed-pad description in the marketplace record. The part is associated with Infineonās OptiMOS 5 25 V and 30 V product family, which is aimed at high power density and energy efficiency. BSC0504NSIATMA1 is intended for applications such as synchronous rectification, DC-DC conversion, load switching, and power-management circuits. The 30 V class makes it suitable for low-voltage rails and point-of-load designs where a compact N-channel switch is required. Because the supplied data confirms the package identity and current/power ratings but does not provide a complete datasheet table, parameters such as on-resistance, gate charge, threshold voltage, and thermal resistance require separate datasheet verification. Designers should verify the complete manufacturer datasheet before selecting the part for a particular gate-drive voltage, switching frequency, or thermal layout. The exposed-pad package and the substantial difference between Ta and Tc ratings indicate that PCB copper, thermal vias, and system cooling can strongly affect achievable load current. Current and power values should therefore be interpreted according to the manufacturerās application conditions rather than as unrestricted universal limits. This page combines verified distributor specifications, official Infineon datasheet access, pricing and stock information, drop-in-comparison guidance, and practical design notes. It is intended to support component identification and preliminary engineering evaluation while clearly separating verified values from parameters that still require datasheet confirmation.
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
The Infineon BSC059N04LS6ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 6 40 V family, rated for 40 V VDS, up to 59 A pulsed drain current, and a maximum RDS(on) of 5.9 mOhm, housed in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package. It combines best-in-class on-resistance with superior switching performance for high-frequency synchronous rectification and motor drive topologies. Key features include a 40 V drain-source breakdown voltage, 5.9 mOhm maximum RDS(on) at VGS=10 V, continuous drain current of 17 A at TA=25C (49 A at TC=25C), pulsed drain current of 59 A at TC=25C, total power dissipation of 3 W at TA=25C and 38 W at TC=25C, and an avalanche-rated body diode for rugged switching transitions. The OptiMOS 6 technology delivers improved Figure of Merit (FOM = RDS(on) x Qg) versus prior generations, enabling higher power density in switched-mode power supplies. The OptiMOS 6 40V power MOSFET family is optimized for synchronous rectification in switched mode power supplies (SMPS) in servers, desktops, and telecom bricks, as well as for DC-DC converters, battery management systems (BMS), motor drives, and OR-ing functions. The SuperSO8 package provides an exposed pad that lowers thermal resistance to the PCB copper pour, supporting 38 W dissipation at 25C case temperature with proper board layout. Compared to the earlier OptiMOS 5 generation, OptiMOS 6 reduces switching losses by approximately 20% through optimized gate charge (Qg) and output capacitance (Coss) characteristics, while maintaining the same 40 V voltage class. This makes the part particularly attractive for high-frequency (>300 kHz) buck and synchronous rectification stages where switching loss dominates total power dissipation. Typical applications include synchronous rectification in server and telecom SMPS, 12 V and 24 V DC-DC point-of-load converters, hot-swap and OR-ing controllers, battery protection and load switching in BMS, and low-voltage motor drive half-bridges. The 5.9 mOhm RDS(on) minimizes conduction loss in high-current 12 V rails. When designing with this device, keep the gate-source voltage below the 20 V VGS(max) rating and provide adequate copper pour (typically 1 in2 minimum) to keep thermal resistance within budget. Use a gate driver with sufficient source/sink current (typically >1 A peak) to fully exploit the switching speed advantage of OptiMOS 6.
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon BSC072N08NS5ATMA1 is an 80 V N-channel power MOSFET rated for 74 A continuous drain current, featuring a maximum on-resistance of 7.2 mOhm, housed in a SuperSO8 / PG-TDSON-8-7 surface-mount package and built on Infineon's OptiMOS 5 technology platform. The part is offered in a tape-and-reel ATMA1 shipping pack and is qualified for industrial and consumer power conversion. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and regulate current in electronic circuits. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied, offering low on-resistance per unit silicon area. Power MOSFETs form a sub-category of discrete semiconductors within the power management hierarchy, sitting alongside IGBTs, voltage regulators, and DC-DC converters, and they are typically used as synchronous rectifier or low-side switching elements in switched-mode power supplies (SMPS), motor drives, and battery management circuits. Key features of the BSC072N08NS5ATMA1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 74 A at case (Tc), pulsed current handling suited to inductive loads, an ultra-low typical on-resistance (RDS(on)) of 7.2 mOhm at VGS = 10 V, and an industry-standard SuperSO8 5x6 mm footprint. The OptiMOS 5 process trades lower gate charge and lower figure of merit (FOM) for the same RDS(on), directly reducing switching and conduction losses in 48 V and 24 V bus applications. Architecturally, OptiMOS 5 uses an advanced trench cell structure with optimized charge balance, achieving a low RDS(on)*Qg figure of merit versus earlier generations. The SuperSO8 package provides a low thermal resistance path through the exposed pad, supporting high continuous current without external heatsinking at moderate duty cycles. Typical applications for BSC072N08NS5ATMA1 include synchronous rectification in 48 V telecom and server bus converters, high-current buck or buck-boost converters in industrial point-of-load regulation, battery management and protection in 12 V/24 V Li-ion packs, brushless DC motor drive half-bridges, and solar micro-inverter low-side switches. The 80 V rating provides comfortable headroom for 24 V industrial and 36 V/48 V nominal bus rails. When designing with this MOSFET, ensure the gate driver can source and sink enough current to charge Qg within the desired switching period, and provide a low-impedance Kelvin source connection (the SuperSO8 pinout supports this) to keep gate-loop inductance low and avoid ringing. A heatsink or substantial copper pour is required for continuous high-current operation above 3-5 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including a side-by-side comparison against same-family Infineon OptiMOS 5 parts and competing N-channel MOSFETs in the same PG-TDSON-8-7 footprint.
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
Infineon BSC150N03LDGATMA1 is a dual N-channel MOSFET array rated at 30V Vds and 20A Id continuous, built on Infineon's OptiMOS 3 process and housed in a compact PG-TDSON-8-4 (5x6 mm) surface-mount package with an exposed drain pad. The device delivers ultra-low gate charge (Qg) and output charge (Qoss) alongside very low on-state resistance, making it optimized for synchronous rectification and high-frequency DC-DC conversion. According to the manufacturer datasheet, the array combines two matched N-FETs in a single package, enabling half-bridge, full-bridge, and dual-FET topologies with minimal parasitic imbalance. A MOSFET array is a discrete-semiconductor category that integrates two or more MOSFETs in one molded plastic package. MOSFETs are field-effect transistors that use a gate voltage to control drain-source current, and they belong to the broader hierarchy of power transistors > discrete semiconductors > active components. OptiMOS 3 represents Infineon's third-generation 30V trench MOSFET platform, balancing low Rds(on) with low Qrr and small package footprint for server, datacom, and telecom power-conversion applications. Key differentiating specifications of the BSC150N03LDGATMA1 include its 30V Vds rating, 20A continuous drain current, ultra-low typical Rds(on) at Vgs=10V, and very low Qg and Qoss figures that minimize switching losses. The PG-TDSON-8-4 package exposes the die-pad to a thermal resistance suitable for double-sided cooling. The part is rated for operation across -55C to +150C junction temperature, with 100% avalanche-tested devices and Pb-free/RoHS-compliant construction. The OptiMOS 3 trench technology achieves industry-low figure of merit (FOM = Rds(on) x Qg), making the BSC150N03LDGATMA1 well-suited to high-frequency buck, synchronous buck, and buck-boost converters. The dual-FET configuration reduces board area and gate-loop inductance versus two discrete SO-8 parts, which is critical for clean switching at 500 kHz to 1 MHz. The exposed die pad enables efficient bottom-side cooling via direct PCB copper bonding. Typical applications include synchronous rectification in 12V server bus converters, 5V to 24V point-of-load (POL) regulators, ORing and hot-swap circuits in telecom/datacom equipment, high-side and low-side switching in motor-driver half-bridges, and battery-management protection FETs in portable and notebook systems. The 30V rating provides ample margin above the 19V maximum of multi-cell lithium battery packs and 12V server rails. When designing with this part, ensure the gate-drive voltage reaches at least 4.5V (logic-level compatible) for full enhancement and lowest Rds(on). For continuous high-current operation above 10A, a minimum 1 oz copper PCB pour directly beneath the exposed drain pad is recommended to keep junction temperature within safe limits and avoid thermal runaway in the loop. Always observe SOA curves under pulsed loads and consider gate-driver source/sink current when operating at >300 kHz. This page synthesizes distributor pricing snapshots, verified drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet. Where the official document leaves parameters undefined for this part number, [DATA_NEEDED] markers are used rather than guessed values, and every parametric claim is sourced.
BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon
The Infineon BSL207SPH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOSā¢ process technology, rated for -20 V VDS and continuous drain current of 6 A (Ta) in a compact 6-pin TSOP-6 (PG-TSOP6-6) surface-mount package. It features a maximum on-state resistance of approximately 65 mOhm at VGS = -4.5 V, with logic-level compatibility down to VGS = -2.5 V, making it well suited for direct microcontroller GPIO drive without intermediate gate-driver stages. The part is qualified to AEC-Q101 for automotive applications. A P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which a negative gate-source voltage creates a conductive p-channel between source and drain. P-channel MOSFETs are commonly used for high-side load switching in power management ICs and discrete load-driver circuits because their source terminal can sit at the system supply rail, eliminating the need for a charge pump or bootstrap circuit. Within the broader taxonomy, a P-channel MOSFET belongs to the FET family, then to discrete transistors, then to discrete semiconductors, and finally to the wider semiconductor component category. Key differentiating features of the BSL207SPH6327XTSA1 include its 6 A continuous drain current in a sub-3x3 mm TSOP-6 outline, low gate threshold voltage for 2.5 V logic-level drive, and the OptiMOSā¢ process which minimizes gate charge (Qg) and figure-of-merit (RDS(on) Ć Qg) for reduced switching losses. The 20 V VDS rating is optimized for 5 V and 12 V rail switching in industrial and automotive point-of-load applications. The device leverages trench-cell OptiMOSā¢ architecture to achieve low RDS(on) per unit silicon area, enabling 6 A handling in a TSOP-6 footprint that would otherwise require a larger SO-8 or DPAK package. Its low Qg simplifies gate-drive design and reduces power dissipation in the controller's GPIO pin during switching transitions. Typical applications include load switching in automotive ECUs, USB power-distribution switches, battery protection circuits in portable equipment, and high-side switches in industrial PLC modules. Its logic-level gate threshold makes it ideal for direct drive from 3.3 V microcontroller GPIOs without external driver circuitry. When designing with this device, ensure the gate-source pull-down resistor is sized to keep the MOSFET safely off during MCU reset. A 100 kOhm gate pulldown is a common choice; smaller values reduce susceptibility to induced turn-on but increase quiescent current draw from the gate driver. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
The Infineon BSL215CH6327XTSA1 is a 20 V, 1.5 A complementary N-channel and P-channel power MOSFET array housed in a 6-pin PG-TSOP6-6 surface-mount package. The integrated half-bridge combines Infineon's low-voltage OptiMOS technology for both polarities, delivering an on-resistance of 250 mOhm max and a total power dissipation of 500 mW. The compact TSOP-6 footprint integrates two MOSFETs that would otherwise require four discrete packages. A MOSFET array (sometimes called a complementary or half-bridge pair) is a power-management semiconductor that pairs an N-channel and a P-channel FET in a single package to simplify push-pull output stages, level shifters, and synchronous rectification in compact designs. The complementary structure belongs to the broader hierarchy of MOSFETs -> discrete semiconductors -> power transistors -> active components. By integrating both channels, designers reduce PCB area, parasitic loop inductance, and BOM count compared with discrete implementations. Key features include a 20 V drain-source breakdown voltage suitable for 12 V rail switching, 1.5 A continuous drain current capability, low gate threshold voltage optimized for 2.5 V/3.3 V logic-level drive, and a typical on-resistance profile that keeps conduction losses small in portable and battery-powered applications. The OptiMOS cell structure provides fast switching transitions that minimize switching losses in DC-DC conversion. The N-channel and P-channel dies share an advanced trench process, with the P-channel specifically engineered to mirror the N-channel's low R_DS(on) and figure-of-merit (FOM) characteristics. This technology alignment ensures symmetric switching performance, which is critical for half-bridge and synchronous buck topologies where channel mismatch can cause shoot-through or uneven duty cycles. Typical applications include load switching in portable devices, power management for wearables and IoT sensors, battery protection circuits, USB power switching, audio amplifier output stages, and small motor driver bridges. The device is also suitable for level shifting between low-voltage MCUs and higher-voltage peripheral loads. When designing with the BSL215CH6327XTSA1, ensure both MOSFET gates are driven within their maximum V_GS ratings (typically +/-12 V absolute, +/-8 V recommended). For the P-channel, the gate must be pulled below the source to enhance, which means a charge-pump or low-side driver is unnecessary - a simple logic-level signal works when the source sits at the rail. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and cross-brand equivalents, plus practical thermal and PCB layout notes not collected in any single manufacturer document.
BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon
The Infineon BSL316CH6327XTSA1 is a complementary small-signal power MOSFET integrating one n-channel and one p-channel OptiMOS device in a single PG-TSOP6-6 surface-mount package, rated 30 V drain-to-source voltage with 1.4 A (n-ch) and 1.5 A (p-ch) continuous drain current. Both transistors share 500 mW total power dissipation and a compact TSOP6 footprint, enabling full H-bridge, push-pull, load-switch, or complementary drive stages from a single 6-pin SOT-23-style outline. A complementary MOSFET pair is a discrete component grouping that places one n-channel and one p-channel enhancement-mode MOSFET in the same package, sharing gate-drive ground references. This topology eliminates the need for level-shifting circuitry and bootstrap capacitors in half-bridge or H-bridge designs, simplifying gate drive, reducing board area, and synchronizing switching transitions for cleaner edges in motor control and audio amplifier output stages. The BSL316C leverages Infineon's OptiMOS low-voltage process technology, delivering low on-state resistance per silicon area and fast switching characteristics suitable for DC-DC conversion, power management, and load switching. The complementary configuration allows designers to build efficient push-pull output stages, full H-bridge motor drivers, level shifters, and analog signal switching paths from one compact package. The PG-TSOP6-6 footprint maintains compatibility with standard JEDEC TSOP6 land patterns, enabling drop-in PCB layout reuse for either polarity of MOSFET. Typical applications include small motor drive circuits in consumer appliances, USB Type-C power switching, signal multiplexing in portable equipment, level translation between logic domains, low-side/high-side synchronous rectification, and general-purpose load switching in battery-powered devices. The compact footprint is particularly suited for space-constrained designs such as wearables, IoT sensor nodes, and portable instrumentation. When designing with this device, ensure gate-source voltages remain within the absolute maximum ratings of typically +/-8 V (verify against datasheet) for the n-channel and p-channel devices. Place gate drive resistors (typically 10-100 ohms) close to the device pins to limit ringing, and verify thermal performance with the 500 mW total package dissipation budget at the operating ambient temperature. This page synthesizes distributor pricing as of 2026-09-10, drop-in TSOP6 alternatives, application notes, and design considerations not found in the manufacturer datasheet alone, including same-Infineon TSOP6 complementary pairs and cross-brand pin-compatible equivalents sourced from the verified cross-reference data.
BSP149H6327XTSA1 - 200V N-Ch Depletion-Mode MOSFET | Infineon
The Infineon BSP149H6327XTSA1 is an N-channel depletion-mode Power MOSFET rated at 200 V drain-source voltage and 660 mA continuous drain current in a PG-SOT223-4 surface-mount package. It uses Infineon's SIPMOS technology and is qualified to 1.8 W power dissipation at Ta = 25 C with an on-resistance (RDS(on)) of approximately 1 ohm at the rated gate bias. The depletion-mode characteristic means the device is normally ON at zero gate-source voltage and turns OFF when a sufficiently negative VGS is applied, which is the opposite convention from standard enhancement-mode MOSFETs. Key features include 200 V VDS rating, 660 mA ID continuous, 1.8 W power dissipation, low on-resistance of 1 ohm typical, and integrated gate protection. Because it is a depletion-mode device, it requires a negative gate bias to switch off; this makes it useful in constant-current sources, analog signal switches, and active loads where normally-off behavior cannot be assumed. Designers must apply a VGS of approximately -2.5 V or lower to fully turn the device off, while VGS = 0 V leaves the channel fully open with ID limited only by the load and the on-resistance. Architecturally, the BSP149H6327XTSA1 uses a vertical SIPMOS (Siemens Power MOS) structure with the source, gate, and drain brought out to separate pins, with the tab functioning as the drain connection to maximize thermal conduction to the PCB. The PG-SOT223-4 footprint is one of the most widely used SOT-223 outlines and allows straightforward replacement with both SOT-223-3 and SOT-223-4 variants as long as the pinout matches. Typical applications include constant-current sources, active loads, normally-on power switches, analog multiplexer and signal routing, automotive 12 V/24 V load management (where the depletion-mode behavior simplifies fail-safe circuit design), and solid-state relay front-ends. In audio circuits, depletion-mode devices are occasionally used in source-follower configurations for current sources where the gate can be biased to set ID. A key design consideration is gate-source bias: the gate cannot be left floating, or the device will remain ON. A pull-down or active bias network is required to guarantee a defined off-state. Designers should also respect the safe operating area (SOA) at higher VDS, especially during inductive load switching where avalanche energy must be considered. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that go beyond the datasheet, helping engineers select the right Infineon part for depletion-mode analog and switching applications.
BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon
The Infineon BSS119NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V VDS, 190 mA continuous drain current (at TA=25Ā°C), and 500 mW power dissipation, supplied in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. Built on Infineon's OptiMOSā¢-equivalent planar N-channel process, it is qualified to AEC-Q101 for automotive applications and optimized as a low-current load switch, level shifter, and signal-conditioning device. What is an N-channel small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching and analog signal routing rather than high-power conversion. It belongs to the broader metal-oxide-semiconductor FET (MOSFET) family and the discrete-semiconductor hierarchy, sitting between signal-level amplifier transistors and power MOSFETs. Small-signal N-channel MOSFETs such as the BSS119N are widely used for high-side or low-side switching in 12 V and 24 V automotive and industrial rails where a logic-level gate can fully enhance the channel. Key features of the BSS119N include a maximum drain-source on-resistance of 6 Ī© typical at VGS=10 V, a gate threshold voltage typically in the 0.8 V to 1.8 V range, and low gate charge that enables fast switching at audio and baseband frequencies. The SOT-23-3 footprint is industry-standard, which allows PCB reuse across many Infineon, onsemi, and Diodes Incorporated N-channel parts. The part is supplied on tape-and-reel for high-volume automated assembly and is RoHS-compliant. Technically, the device uses Infineon's mature planar N-channel technology and a logic-level-compatible threshold so that 5 V microcontrollers can drive the gate directly without a charge pump. The 100 V VDS rating provides substantial headroom over 12 V automotive and 24 V industrial rails, suppressing transient ringing and inductive kickback. The 190 mA continuous drain rating is sufficient for relay coils, small solenoids, signal-line multiplexing, and LED strings. Typical applications include automotive load switching (lamp drivers, relay drivers, small motor control), industrial 24 V sensor multiplexing, battery-protection discharge FETs in low-current packs, level shifters between 3.3 V logic and 12 V buses, and signal-line multiplexing in test equipment. Designers value the part for its automotive-grade reliability and small PCB footprint. When designing with the BSS119N, ensure that the gate is pulled low during power-up with a 100 kĪ© resistor to prevent accidental turn-on from floating-gate leakage currents on noisy rails. Limit switching frequency to a few hundred kHz if the part is used in PWM applications to keep switching losses and EMI low. This page synthesizes distributor pricing, automotive-grade context, drop-in alternatives in the SOT-23-3 footprint, and practical PCB design notes that are not consolidated in the manufacturer datasheet.
BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon
The Infineon BSS123NH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 100 V drain-source voltage and 190 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package with 500 mW power dissipation. It belongs to Infineon's BSS123N automotive-qualified family, qualified to AEC-Q101 and RoHS compliant with Pb-free lead plating, making it suitable for both commercial and automotive-grade designs. A small-signal N-channel MOSFET (also called an N-channel enhancement-mode FET or N-FET) is a voltage-controlled transistor that uses a positive gate-to-source voltage to create a conductive channel between drain and source. Within the semiconductor taxonomy, this places it as: small-signal MOSFET -> power MOSFET -> discrete semiconductor -> transistor. These devices are the workhorses of low-power switching, level shifting, and high-side / low-side load driving, where their high input impedance and fast switching make them far more efficient than bipolar transistors at small currents. Key features of the BSS123NH6327XTSA1 include a maximum drain-source on-resistance of 6 Ī© at VGS = 10 V, a low threshold voltage compatible with 5 V and 3.3 V logic-level gate drive, and an integrated ESD protection diode on the gate. The SOT-23-3 footprint is a de facto industry standard shared by virtually every small-signal N-FET family, enabling PCB layout reuse across many manufacturers. Automotive AEC-Q101 qualification makes the part suitable for under-hood and body-electronics applications where supplier change control and reliability are required. Architecturally, the BSS123NH6327XTSA1 uses a planar DMOS cell structure optimized for low gate charge (Qg typically around 0.8 nC) and fast switching, with a body-drain diode and an ESD clamp built into the gate pad. The 100 V BVdss rating provides generous margin for 12 V and 24 V automotive buses, while the 6 Ī© RDS(on) keeps conduction loss manageable at sub-200 mA loads. Typical applications include load switching in battery-powered IoT devices, level shifters between 3.3 V microcontrollers and 12 V peripherals, high-side driver stages for LEDs and relays, and USB / HDMI port power switching. It is also widely used as a flyback or freewheeling switch in small DC-DC converter blocks. When designing with this device, observe the 500 mW Ta power dissipation limit and derate output current above 70 Ā°C ambient. Gate-source voltage must remain below the absolute maximum of Ā±20 V, even though logic levels (3.3 V / 5 V) are sufficient to fully enhance the channel. The SOT-23-3 thermal pad is pin 2 (drain), so PCB copper area on the drain node doubles as a heatsink. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single source for selection.
BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon
The Infineon BSS126H6327XTSA2 is a 600 V N-channel depletion-mode SIPMOS small-signal MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. It is rated for a continuous drain current of 21 mA (Ta) with a power dissipation of 500 mW (Ta), and a maximum on-resistance of 500 ohm (typical for the depletion mode). Unlike enhancement-mode MOSFETs, the BSS126 is normally-on at zero gate-source voltage, making it uniquely suited to startup, protection, and analog reference roles. A depletion-mode MOSFET is a field-effect transistor whose channel is physically present at fabrication; conduction is maximum when VGS = 0 and the channel is progressively pinched off as VGS is driven more negative (for an N-channel device). This category sits within the broader MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) family, which in turn belongs to power management and discrete semiconductors. Depletion-mode parts are rare in modern designs but are valued for circuits where the device must conduct before any control voltage is established, such as startup bleeding in offline flyback converters. Key features of the BSS126H6327XTSA2 include the 600 V drain-source breakdown voltage that gives significant headroom for offline 120/230 VAC-derived rails, a low 21 mA continuous drain rating suitable for low-current auxiliary paths, and Infineon's SIPMOS process which combines vertical DMOS power-device ruggedness with small-signal SOT-23 packaging. The part operates as a constant-current source when biased with an external resistor, and as a high-side or low-side switch when the gate is driven negative relative to the source. Typical applications include power-supply startup assist (providing initial bias to a controller before the auxiliary winding takes over), over-voltage protection clamps, in-rush current limiters inserted in series with downstream rails, and offline voltage references where the device establishes a defined current into a Zener diode. Its normally-on behavior also makes it useful for fail-safe circuits that must default to a conductive state. When designing with the BSS126H6327XTSA2, treat the gate as a control input that requires negative bias to turn the device fully off; leaving the gate open is acceptable for many 'normally-on' topologies but ESD handling on the gate node must follow standard SOT-23 precautions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon
The Infineon BSS138NH6327XTSA2 is an N-channel enhancement-mode SIPMOS small-signal MOSFET rated at 60 V V(BR)DSS, 230 mA continuous drain current (Ta), and 3.5 ohm maximum R_DS(on) at V_GS = 10 V, housed in a 3-pin PG-SOT-23 surface-mount package and supplied on tape-and-reel. Its logic-level V_GS(th) of approximately 1.4 V allows direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage, making it a standard building block for low-power switching. The device is qualified to AEC-Q101, halogen-free per IEC 61249-2-21, Pb-free with RoHS-compliant lead plating, and carries an automotive-grade reliability profile. A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents. Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing. Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for Ā±20 V V_GS, providing margin against transient over-drive. Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes. When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon
The Infineon BSS214NH6327XTSA1 is a single N-channel small-signal MOSFET built on the OptiMOS 2 process, rated for 20 V VDS and 1.5 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package. The device features a maximum on-resistance of 250 mOhm at VGS = 4.5 V, 500 mW power dissipation (Ta), and is qualified to AEC-Q101 for automotive applications. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an n-type conduction channel between drain and source. As a small-signal MOSFET in the broader discrete-semiconductor hierarchy, it sits under power MOSFETs, which themselves are a sub-category of discrete transistors. Low-threshold, logic-level variants like the BSS214N are designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins without a separate gate driver stage. The key features include a logic-level gate threshold (VGS(th) in the sub-2 V range), 250 mOhm maximum RDS(on) at 4.5 V VGS, low gate charge enabling fast switching transitions, and an integrated ESD protection diode on the gate. The 20 V VDS rating makes it suitable for low-voltage bus switching such as USB (5 V), 12 V battery systems, and point-of-load rails below 15 V. The OptiMOS 2 technology provides a favorable FOM (RDS(on) x Qg) for its class. Architecturally, the BSS214N uses Infineon's planar OptiMOS 2 cell design, which reduces gate charge and conduction loss relative to older TrenchMOS generations. The SOT-23 package's exposed lead frame allows modest thermal dissipation to copper pads, supporting up to 500 mW continuous dissipation on a standard 1 oz JEDEC EIA/JESD51 FR4 test board. Typical applications include load switching in USB ports, battery management systems, power-rail multiplexing, DC-DC converter synchronous-rectifier low-side switches, and motor-driver low-side stages in small fans or pumps. Automotive body electronics and industrial sensor interfaces also benefit from the AEC-Q101 qualification. When designing with this part, observe the SOA derating for pulsed currents above 1.5 A and ensure that the VGS drive voltage does not exceed the maximum rating. The SOT-23 footprint requires thermal copper-pad design to sustain continuous 500 mW; thermal vias under the drain pad are recommended. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.