NCV68061SNAIT1G - Ideal Diode NMOS Controller | onsemi
MPN: NCV68061SNAIT1G ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.61 | $0.61 |
| 10 | $0.55 | $5.50 |
| 100 | $0.49 | $49.00 |
| 500 | $0.44 | $220.00 |
| 1,000 | $0.38 | $380.00 |
NCV68061SNAIT1G Overview
An ideal diode controller is a power-management IC that continuously monitors the voltage across an external MOSFET and switches it on or off to emulate a diode without the conventional forward voltage drop of 0.4 V to 0.7 V. In the power-supply hierarchy, it sits in the protection and power-path management layer alongside ORing controllers, hot-swap controllers and load switches, making it a key element in N+1 redundant power architectures where supplies are paralleled.
Key features include reverse polarity protection, reverse current blocking, and N+1 ORing controller functionality. Because the NCV68061 controls the ON/OFF state of the external N-channel MOSFET according to the source-to-drain voltage, the conduction loss is limited to I2xRDS(on) of the MOSFET rather than a fixed diode drop, dramatically reducing power dissipation and heat-sinking requirements in high-current paths.
Technically, the device senses the differential voltage across the external MOSFET and drives the gate to regulate or block conduction, providing a fast response that blocks reverse current before it can flow from a higher-potential output back into a failed or lower-voltage input rail. The low 215 uA supply current makes it suitable for always-on automotive and battery-fed systems where every milliamp matters.
Typical applications include automotive power-path protection, N+1 redundant power-supply ORing in telecom and networking infrastructure, and reverse-battery protection in industrial systems. The NCV prefix and onsemi classification confirm its automotive-grade positioning, and an official evaluation board (NCV68061SNAIT1G-GEVB) is available for rapid prototyping.
Design consideration: because the controller drives an external MOSFET, total performance depends heavily on the selected NMOS - choose a device with low RDS(on) at the available gate drive, and verify the source-to-drain sensing thresholds in the manufacturer datasheet before finalizing the layout.
This page synthesizes distributor pricing, package data, and application guidance not found together in the manufacturer datasheet, with pricing as of 2026-10-19.
Drop-in alternatives for NCV68061SNAIT1G — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with NCV68061SNAIT1G (same form factor and footprint) — differing in MSL Level, Mounting Type.
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Request AlternativesNCV68061SNAIT1G Maximum Ratings & Electrical Characteristics
| Function | Reverse Polarity Protection and Ideal Diode NMOS Controller |
| External MOSFET Type | N-Channel |
| ORing Configuration | N+1 ORing Controller, 1:1 |
| Quiescent Supply Current | 215 uA |
| Package | TSOT-23-6 (SOT-23-6 Thin), 6-pin |
| Mounting Type | Surface Mount |
| Marking Code | C66 |
| Grade | Automotive (NCV prefix) |
| Reverse Current Blocking | Yes |
| MSL Level | MSL 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Packaging | Tape & Reel (T1G suffix) |
| Evaluation Board | NCV68061SNAIT1G-GEVB |
NCV68061SNAIT1G tsot-23-6 (sot-23-6 thin), 6-pin Pin Configuration Guide
Pin configuration for NCV68061SNAIT1G (tsot-23-6 (sot-23-6 thin), 6-pin package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for NCV68061SNAIT1G.
Refer to the datasheet for full pin configuration.
Typical Applications
NCV68061SNAIT1G is suitable for 6 applications: Automotive Power-Path Protection, N+1 Redundant Power Supply ORing, Reverse Battery Protection in Industrial Systems, Battery-Fed Always-On Electronics, Diode Replacement in High-Current Rectification Paths, Telecom and Networking Infrastructure Power.
Automotive Power-Path Protection
In automotive systems, the battery rail can be reversed during jump-starts, service events, or load-dump transients, and downstream ECUs must survive these events. The NCV68061SNAIT1G is an automotive-grade (NCV prefix) reverse polarity protection and ideal diode NMOS controller: it senses the source-to-drain voltage across an external N-channel MOSFET and blocks reverse current or reverse polarity within the controller response time. Because the conduction loss is I2xRDS(on) of the MOSFET rather than a 0.4 V to 0.7 V diode drop, an ECU drawing several amps loses only tens of millivolts in the protection path - preserving headroom for cold-crank conditions where the battery voltage sags. The 215 uA quiescent current keeps the protection stage negligible against overall module sleep current budgets. Design the path with the onsemi NCV68061SNAIT1G-GEVB evaluation board to validate blocking behavior under load-dump before layout freeze.
Recommended
N+1 Redundant Power Supply ORing
In telecom, networking and server infrastructure, N+1 redundant supplies are paralleled through ORing elements so that a failed or drooping unit is automatically isolated. The NCV68061SNAIT1G is classified by DigiKey as an N+1 ORing controller with a 1:1 channel configuration driving an N-channel MOSFET. Each supply gets one controller-MOSFET pair: when the rail is healthy the MOSFET conducts with near-zero forward drop; when the rail falls below the output bus, the controller turns the MOSFET off, preventing reverse current from the shared bus back into the failed unit. Compared with diode ORing, per-channel loss drops from Vf x I to I2 x RDS(on), directly improving end-to-end efficiency at typical 5 V to 48 V bus currents. The low 215 uA supply current keeps the per-channel protection overhead minimal across multiple paralleled modules.
Recommended
Reverse Battery Protection in Industrial Systems
Industrial 24 V control panels, motor drives and field devices are frequently wired by installers, making reverse-connection events a real reliability risk. The NCV68061SNAIT1G protects such systems by controlling an external N-channel MOSFET in the input power path: under correct polarity the MOSFET conducts with only milliohm-level resistance, and under reverse polarity the controller keeps the MOSFET off, isolating the load. Unlike a series protection diode, which wastes roughly 0.7 V x I continuously and requires heatsinking at 24 V industrial load currents, this active approach keeps efficiency losses in the tens of milliwatts per amp. The TSOT-23-6 package occupies minimal board area, and the automotive-grade construction supports the wide temperature and durability expectations of industrial field equipment. Verify MOSFET VDS rating against industrial transient conditions with appropriate surge suppression upstream.
Recommended
Battery-Fed Always-On Electronics
Telematics units, security systems, metering equipment and IoT gateways run continuously from batteries or battery-backed rails, so every milliamp of protection overhead counts. The NCV68061SNAIT1G draws only 215 uA of supply current, an order of magnitude below many active protection solutions, while still providing reverse polarity protection and reverse current blocking through its external N-channel MOSFET. Because the controller gates the MOSFET according to source-to-drain voltage, the device also prevents a charged battery from discharging back into a disconnected or discharged charger input. At typical IoT load currents of 100 mA to 1 A, the effective forward drop through a low-RDS(on) MOSFET is single-digit millivolts, versus 300 mV to 400 mV through a Schottky - extending usable battery runtime meaningfully over the product lifetime.
Recommended
Diode Replacement in High-Current Rectification Paths
Anywhere a power rectifier diode conducts continuously - rectifier bridges feeding post-regulators, welding and charging equipment, high-current ORing banks - the fixed 0.4 V to 0.7 V forward drop becomes the dominant loss term. The NCV68061SNAIT1G is explicitly intended by onsemi as a lower-loss, lower-forward-voltage replacement for power rectifier diodes. Pairing the controller with a modern N-channel MOSFET in the few-milliohm class converts the loss to I2 x RDS(on): at 10 A and 3 mOhm, only 0.3 W versus 4 W to 7 W for a Schottky. This reduces heatsink size, enclosure temperature and cooling fan load. The 6-pin TSOT-23-6 controller is small; board area is dominated by the chosen MOSFET, allowing per-application optimization of the cost-versus-conduction-loss trade-off.
Recommended
Telecom and Networking Infrastructure Power
Telecom equipment operating from -48 V or intermediate-bus architectures requires rugged, low-loss input protection and supply ORing. Distributor listings position the NCV68061SNAIT1G as well suited to rectification, circuit protection, signal conditioning, and telecom and networking infrastructure. The controller enables low-loss ORing of redundant rectifier outputs or battery feeds into a common bus: the external N-channel MOSFET presents near-zero drop when the feed is healthy and blocks reverse current within the controller response time when a feed fails. Automotive-grade construction translates to robustness against the wide ambient and transient environments of remote and unconditioned equipment rooms. The 215 uA quiescent draw per channel is negligible against multi-hundred-watt system budgets, and the TSOT-23-6 footprint allows protection on every feed without significant board-area penalty.
Recommended
Engineering reference data for NCV68061SNAIT1G — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product |
|---|---|
| Package | TSOT-23-6 (SOT-23-6 Thin) |
| Brand | onsemi |
| Function | Ideal Diode NMOS Controller, Reverse Polarity Protection |
| ORing Configuration | N+1 ORing Controller, 1:1 |
| Supply Current | 215 uA |
| RoHS | ROHS3 Compliant |
| MSL | MSL 1 (Unlimited) |
| Evaluation Board | NCV68061SNAIT1G-GEVB |
Key Differentiators
- Automotive-grade construction (vs Generic consumer-grade ideal diode controllers)
- Very low quiescent consumption (vs Schottky diode ORing (passive, no supply current but large conduction loss))
- Integrated reverse polarity protection plus ORing in one 6-pin part (vs Discrete protection plus separate ORing controller approaches)
Design Notes
The NCV68061 does not dissipate the load current itself - the external N-channel MOSFET does. Estimated: conduction loss equals load-current-squared times RDS(on); at 5 A with a 5 mOhm MOSFET that is 0.125 W, versus roughly 2.5 W to 3.5 W for a 0.5-0.7 V Schottky. Select the MOSFET for lowest RDS(on) at the gate drive the controller provides, and size its VDS rating against the rail plus transient margins. Verify the exact input operating range in the onsemi NCV68061 datasheet for your rail voltage.
Place the controller close to the external MOSFET to keep the gate-drive loop short, minimizing parasitic inductance that can cause gate ringing during fast reverse-current turn-off. Use a solid, low-impedance ground connection for the source-sense path, since the controller regulates on source-to-drain differential voltage - sense trace routing errors directly translate into blocking-threshold errors. Follow the component placement of the NCV68061SNAIT1G-GEVB evaluation board as a validated starting layout.
The most common mistake is treating the NCV68061 as a self-contained diode - it is only a controller, and system behavior (forward drop, reverse blocking speed, thermal performance) is set by the external MOSFET. Second, do not omit the recommended input/output capacitance from the datasheet typical application; reverse-current blocking transients need local energy storage to avoid bus voltage dips. Third, the marking code is C66 - include this in incoming inspection criteria to prevent counterfeit substitution.
Compliance Information
PartGenie compliance notes state ROHS3 Compliant and REACH Unaffected with MSL 1 (Unlimited). The NCV prefix indicates onsemi automotive-grade classification; specific AEC-Q100 qualification level must be confirmed from the datasheet.
