MOSFETs
Produtos (1294)
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPC90N04S5L3R3ATMA1 is a 40 V N-channel power MOSFET from the OptiMOS 5 family, rated for 90 A continuous drain current and a maximum on-resistance of 3.3 mΩ at VGS = 10 V, housed in a surface-mount PG-TDSON-8-34 (TDSON-8) package with exposed pad. The device is logic-level compatible (VGS(th) ~2 V), AEC-Q101 qualified for automotive use, and rated for an operating junction temperature up to 175°C with 100% avalanche testing. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that regulates current flow between its drain and source terminals. The OptiMOS 5 40 V family belongs to the broader category of low-voltage power MOSFETs used for switching and synchronous-rectification applications, sitting within the hierarchy of power semiconductors and discrete transistors. Infineon's OptiMOS technology emphasizes low on-resistance per unit silicon area, low gate charge, and fast switching transitions to minimize conduction and switching losses. Key features include 3.3 mΩ RDS(on) max at VGS = 10 V, a low typical gate charge QG suitable for high-frequency switching, an integrated source-drain diode for synchronous rectification, and a logic-level gate threshold that allows direct drive from 3.3 V or 5 V microcontrollers. The PG-TDSON-8-34 package features a low thermal resistance drain-to-case path via the exposed metal pad, enabling 62 W power dissipation (TC). MSL1 moisture sensitivity and 260°C peak reflow compatibility support standard lead-free SMT assembly. The device uses an N-channel enhancement-mode architecture built on Infineon's advanced planar-trench process technology. Compared with the prior OptiMOS 3 generation, the OptiMOS 5 family typically delivers lower figure-of-merit (FOM = RDS(on) × QG), enabling cooler operation in high-current applications. The integrated body diode is robust enough to handle avalanche events, as confirmed by 100% avalanche testing at the production line. Typical applications include automotive 12 V/24 V systems such as electronic power steering (EPS), brake systems, fuel-injection drivers, HVAC blowers, LED lighting drivers, and DC-DC converter high-side switches. It also fits industrial motor control, e-bike controllers, battery management protection MOSFETs, and telecom 48 V bus hot-swap circuits. The AEC-Q101 qualification makes it especially suitable for safety-critical automotive ECUs. When designing with this part, ensure the gate-drive voltage reaches at least 10 V for the lowest on-resistance (logic-level operation at 3.3 V gives higher RDS(on) - check curves). The exposed pad must be soldered to a sufficient copper area for thermal dissipation; without it, the 62 W rating drops sharply. Keep the gate-trace short and add a small series gate resistor to dampen ringing. This page synthesizes distributor pricing tiers, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet. For engineers evaluating the IPC90N04S5L3R3ATMA1 against competing 40 V MOSFETs, the comparison table and selection guide below provide the engineering trade-offs.
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
The Infineon IPD028N06NF2SATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 60V technology platform, rated for 60 V VDS and continuous drain current of 24 A at TA=25°C and 139 A at TC=25°C. The part is housed in a 3-pin surface-mount PG-TO252-3 (DPAK) package with tab, dissipating 3 W at TA and 150 W at TC. According to Infineon datasheet parameters, the typical on-resistance is 2.85 mΩ at VGS=10 V, making it one of the lowest-RDS(on) devices in the 60 V class for its footprint. An N-channel power MOSFET is a voltage-controlled majority-carrier switch in which the drain-source channel is induced by a positive gate-source voltage exceeding the threshold. Power MOSFETs like this belong to the discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> N-channel MOSFET -> OptiMOS family -> Infineon 60V/100V/200V portfolio. The PG-TO252-3 (DPAK) SMD package family provides a tab that doubles as the drain terminal and a low-thermal-resistance path to PCB copper, which is essential for the 150 W TC rating. Key features include ultra-low 2.85 mΩ typical RDS(on) at VGS=10 V, fast switching suitable for synchronous rectification, and an optimized body diode for hard-commutated topologies. The OptiMOS 5 cell geometry reduces gate charge (Qg) and output charge (Qoss) versus prior generations, directly improving light-load efficiency in SMPS and reducing switching losses in motor drives. The device integrates an ESD-protected gate structure and is qualified to JEDEC MSL1/JEDEC JESD22 standards per Infineon's product validation. The 3-pin PG-TO252-3 pinout (Gate, Drain-tab, Source) is the industry-standard DPAK footprint shared across multiple Infineon part families, simplifying second-source design. At 24 A continuous / 139 A pulsed, this MOSFET is engineered for high-current DC-DC conversion and motor-control stages. Typical applications include synchronous rectification in 48 V server/telecom bus converters, brushed and BLDC motor drives, battery management protection MOSFETs in 12 V/24 V packs, and high-current automotive eFuse/PDU blocks. The combination of low RDS(on) and DPAK thermal performance supports >95% efficient buck stages in the 30 A-class. When designing with this part, keep gate-drive rise/fall times below 50 ns to avoid body-diode-induced ringing, and place a 10 kΩ gate-source pulldown to guarantee the MOSFET stays off during controller reset. Use 1 oz copper minimum on the drain tab with thermal vias to a 1 oz inner plane; this lowers RθJA from ~62 C/W (FR4 minimal footprint) toward 35 C/W in well-cooled designs. This page synthesizes real-time distributor pricing, drop-in DPAK alternatives, and practical design notes not consolidated in the manufacturer datasheet.
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPD031N03LGATMA1 is an N-channel OptiMOS 3 power MOSFET rated for 30 V drain-to-source voltage and 90 A continuous drain current at 25 °C case temperature, housed in a PG-TO252-3-11 (DPAK-2) surface-mount package with 94 W power dissipation capability. It achieves an ultra-low typical on-state resistance of 3.1 mΩ at 10 V gate drive and is qualified for demanding synchronous-rectifier and OR-ing applications in server, datacom, and telecom power-conversion systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals and power. It belongs to the discrete-semiconductor family and serves as the fundamental building block of switched-mode power supplies (SMPS), DC-DC converters, and motor-control circuits. The OptiMOS 3 family from Infineon uses an advanced trench technology to minimize conduction and switching losses, occupying the middle tier of the MOSFET technology tree between planar MOSFETs and newer OptiMOS 5/6 generations. Key differentiating specifications include a maximum on-state resistance of 3.1 mΩ at VGS = 10 V, ultra-low gate charge and output charge for reduced switching losses, and an avalanche-rated single-pulse current capability of 90 A. The device supports 4.5 V gate drive for compatibility with standard logic-level controllers and achieves full enhancement at 10 V for lowest RDS(on). Its PG-TO252-3-11 (DPAK) package provides a Kelvin-source connection through the tab, optimizing gate-drive loop inductance. Architecturally, the IPD031N03LGATMA1 uses Infineon's third-generation OptiMOS trench-cell technology with a vertical DMOS structure, integrating a Schottky-like body diode and an avalanche-rugged single-pulse rating. The process node delivers industry-leading figure-of-merit (FOM = RDS(on) × Qg) for 30 V-class MOSFETs, making it highly competitive against Vishay Siliconix and onsemi equivalents in the same voltage class. Typical applications include voltage regulator modules (VRMs) for server and datacom systems, point-of-load (POL) converters in telecom equipment, synchronous rectification in 12 V-output buck converters, battery-management load switches, and high-current DC motor control. Its ultra-low RDS(on) makes it particularly suitable for high-efficiency OR-ing and hot-swap circuits where conduction loss dominates. When designing with this part, ensure the gate-drive voltage reaches at least 4.5 V for full enhancement and provide adequate PCB copper area under the DPAK tab for thermal dissipation. At 30 A continuous load, power dissipation reaches roughly 2.8 W, which requires at least 200 mm² of 2-oz copper pour to keep junction temperature rise below 50 °C. This page synthesizes Infineon datasheet specifications, DigiKey and Mouser distributor pricing, drop-in alternative candidates sourced from cross-reference tools, and practical design notes not found in the manufacturer datasheet, providing engineers with a single-page decision reference.
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon IPD031N06L3GATMA1 is a 60V, 100A N-channel power MOSFET built on Infineon's OptiMOS 3 trench technology, housed in a surface-mount PG-TO252-3 (DPAK) package. It features an industry-leading maximum on-resistance of 3.1 mΩ at VGS=10V and supports continuous drain current up to 100A at TC=25°C with a maximum power dissipation of 167W. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate structure (typically a metal-oxide layer, hence the name) to modulate current flow between drain and source terminals. MOSFETs sit within the broader hierarchy of discrete semiconductors and are the workhorse building block of switched-mode power conversion, motor control, and load switching. Within power MOSFETs, the N-channel enhancement-mode family dominates low-voltage (<200V) applications because N-channel carriers have roughly 2-3x higher mobility than P-channel, yielding lower RDS(on) for the same die area. The IPD031N06L3GATMA1's OptiMOS 3 platform is Infineon's third-generation optimized trench cell design, targeting 12V/24V/48V automotive and industrial rails. Key specifications include a 60V drain-to-source breakdown (VDS), 3.1 mΩ maximum on-resistance at VGS=10V, and a low gate threshold around 1.0-2.2V that is fully enhanced at the standard 4.5V/10V logic-level drives. The part is rated for pulsed drain current of 400A (IDM) and offers excellent dv/dt ruggedness. Its PG-TO252-3 (DPAK) footprint enables direct compatibility with standard surface-mount assembly lines and provides a thermal path through the drain tab for heatsink attachment. OptiMOS 3 uses an advanced trench cell geometry and a low-resistance substrate to minimize both conduction losses (RDS(on) × ID²) and switching losses (Qgd × VDS × fsw). This makes the device well suited for high-frequency SMPS, where total power loss determines thermal sizing and efficiency. The 167W power dissipation rating at TC=25°C assumes an infinite heatsink; on a 1 oz copper FR-4 PCB pad of approximately 1 cm², derating reduces usable dissipation to roughly 2-3W. Typical applications include synchronous rectification in 12V/24V DC-DC converters, high-current load switches in automotive ECUs, motor drive H-bridges, battery management protection circuits, and hot-swap controllers. The 60V rating provides ample margin above 24V automotive transients and 48V mild-hybrid rails. When designing with this MOSFET, pay close attention to gate-drive voltage: the device is fully enhanced at 10V VGS but exhibits significantly higher RDS(on) when driven at 4.5V. Always place the gate-source resistor (typically 10-100 kΩ) directly at the gate pin to prevent floating-gate turn-on during high dv/dt switching transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and application notes, providing engineering context not found in a single manufacturer PDF.
IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon
The Infineon IPD034N06N3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 platform, rated at 60 V drain-source breakdown voltage, 100 A continuous drain current (at Tc), and 167 W maximum power dissipation, housed in a surface-mount PG-TO252-3 (DPAK) package with on-resistance as low as 3.4 mOhm at 10 V VGS. The trailing "G" in the part number denotes a green (RoHS-compliant Pb-free) finish, while "ATMA1" indicates the tape-and-reel packaging variant. A power MOSFET of this class sits in the discrete semiconductor hierarchy as a voltage-controlled switch used to efficiently route or modulate current in power-conversion paths. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled unipolar transistor optimized for high-current, high-speed switching. The MOSFET category sits within the broader discrete semiconductor taxonomy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. Low on-resistance (RDS(on)) is the defining figure of merit because conduction loss equals I^2 x RDS(on). OptiMOS 3 is Infineon's third-generation 60V/100V/200V trench MOSFET family targeting SMPS, motor drive, and synchronous rectification. Key features of the IPD034N06N3GATMA1 include an industry-leading 3.4 mOhm maximum RDS(on) at VGS=10V, a logic-level-compatible gate threshold range suitable for 4V gate drive, low gate charge QG for fast switching transitions, and an automotive-grade qualification per Infineon's product page. The DPAK (TO-252) surface-mount package provides a low thermal resistance path via its mounting tab and supports tab-side heatsinking on standard FR-4 PCB layouts. RoHS compliance is verified via the green suffix "G" in the orderable part number. The OptiMOS 3 process uses a trench-gate architecture that maximizes cell density while minimizing conduction and switching losses. Compared with planar MOSFETs of the same die size, OptiMOS 3 achieves roughly 40-50% lower RDS(on) and substantially lower Qgd (gate-to-drain charge), enabling higher-frequency operation in switched-mode power supplies. The optimized body diode also improves hard-commutation ruggedness in bridge topologies. Typical applications for the IPD034N06N3GATMA1 include high-current synchronous rectification in 12V/24V DC-DC converters, low-side switches in motor drive H-bridges, battery protection circuits in e-mobility and power tools, and OR-ing FETs in redundant telecom DC power architectures. Its 3.4 mOhm RDS(on) is a particularly strong fit for 10-30A continuous loads where conduction loss dominates system efficiency. When designing with this part, prioritize a short, wide source-tab copper pour directly under the DPAK tab to minimize thermal resistance. Place the gate drive resistor (typically 10-100 ohm) close to the gate pin, and add a local gate-source pull-down of about 10 kohm to prevent unintended turn-on during supply transients. Verify that peak VDS stays below 48V in 24V systems to provide 20% derating margin.
IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPD038N06N3GATMA1 is an N-channel OptiMOS power MOSFET rated at 60 V drain-source breakdown and 90 A continuous drain current (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. It belongs to Infineon's OptiMOS 60 V family and delivers a typical on-resistance of 3.8 mΩ at VGS = 10 V, making it a benchmark low-FOM (figure-of-merit) device for high-current switching. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of the P-region beneath the gate oxide, forming an N-channel that conducts current between drain and source. In the broader taxonomy, this places the IPD038N06N3GATMA1 inside: power MOSFET -> discrete MOSFET -> discrete semiconductor -> power management component. The "low-voltage, very-high-current" segment of this hierarchy is dominated by 40 V-100 V MOSFETs optimized for synchronous rectification in switched-mode power supplies (SMPS), where conduction and switching losses directly determine overall system efficiency. Key features include 60 V VDS max, 90 A ID continuous (Tc), ±20 V VGS rating, 188 W power dissipation (Tc), and a low on-resistance of 3.8 mΩ typical at 10 V VGS. The OptiMOS 60 V generation uses a trench-cell structure with an optimized P-body profile that minimizes RDS(on) × Qg figure of merit, while the 4 V typical VGS(th) ensures robust compatibility with 5 V-12 V gate-drive signals common in digital controllers. Internally the device uses Infineon's advanced trench MOSFET technology, which achieves a low specific on-resistance per unit silicon area. This enables the 3.8 mΩ/90 A rating in a compact TO-252 outline rather than the larger D2PAK or TO-220 packages older planar generations required. The part is rated MSL1 (moisture sensitivity level 1) and is fully RoHS-compliant and halogen-free. Typical applications include synchronous rectification in server, desktop and tablet SMPS, DC-DC converter high-side/low-side switches, motor-control H-bridges, solar micro-inverters, and battery-protection circuits in 12 V-36 V lithium packs. The low gate charge and low output capacitance also make it well-suited for high-frequency hard-switched topologies. When designing with this MOSFET, plan thermal management around the TO-252 footprint. With 188 W Tc-rated power dissipation the junction can run near 175 °C at full load without proper PCB copper heatsinking; an exposed thermal pad soldered to a 1-2 square-inch copper pour keeps thermal resistance (RθJA) typically below 50 °C/W. This page synthesizes distributor pricing, drop-in alternative part numbers in the same TO-252 footprint, and practical PCB design notes that go beyond the manufacturer datasheet's typical-characteristics graphs.
IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon
The Infineon IPD038N06NF2SATMA1 is an N-channel 60V OptiMOS power MOSFET rated at 120A continuous drain current (Tc) with a low 3.85 mΩ maximum on-resistance at VGS=10V, housed in a PG-TO252-3 (DPAK) surface-mount package. Built on Infineon's OptiMOS technology, it targets high-current, low-voltage switching where conduction loss dominates the thermal budget. An N-channel MOSFET is a voltage-controlled majority-carrier switch used in synchronous rectification, DC-DC conversion, motor drive, and load switching. Compared with P-channel parts, N-channel MOSFETs deliver higher mobility and lower RDS(on) per die area, but require a gate drive at or above the source potential - typically produced by a gate driver IC or bootstrap supply. Within the broader taxonomy, this part sits in the discrete MOSFET > N-channel trench MOSFET > low-voltage power MOSFET > OptiMOS family category of Infineon's product tree. Key features include a 60V drain-source breakdown rating, ultra-low 3.85 mΩ RDS(on) at 10V VGS, 68nC typical gate charge at 10V, fast switching for SMPS efficiency, and an operating junction temperature up to 175°C. The trench-cell architecture minimizes figure-of-merit (FOM = RDS(on) × Qg), enabling both lower conduction loss and faster switching than planar generations. The PG-TO252-3 (DPAK) package delivers a thermal resistance around 40-50°C/W on a 1-square-inch copper pour, sufficing for 3W continuous dissipation on the PCB tab and substantially more when the tab is bolted to an external heatsink. Typical applications include synchronous rectification in 48V telecom and server bus converters, high-current DC-DC buck/boost stages, brushed and brushless motor drives, e-bike and power tool inverters, and battery protection FETs in 12-48V battery packs. Engineers select this part when they need low RDS(on) at moderate gate drive and a thermally robust surface-mount DPAK footprint. When designing with this device, size the gate drive to deliver at least 10V VGS for full RDS(on) specification; partial enhancement at 4.5V will degrade on-resistance by roughly 1.5-2x. Keep the source-lead PCB inductance minimal - return the gate-drive return path through the source pin adjacent copper - to limit turn-off voltage overshoot and ringing.
IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon
The Infineon IPD042P03L3GATMA1 is a P-channel power MOSFET rated at -30 V VDS, -70 A continuous drain current (Tc), and 4.2 mΩ maximum RDS(on) at VGS = -10 V, built on Infineon's OptiMOS™ P technology and housed in a surface-mount PG-TO252-3 (DPAK) package. It is optimized for low-side or high-side switching where P-channel polarity simplifies gate drive by removing the bootstrap or charge-pump circuitry needed for an equivalent N-channel part. Key specifications include a gate threshold of -1.5 V (typ), pulsed drain current of -280 A, single-pulse avalanche energy of 290 mJ, and maximum power dissipation of 150 W at Tc. A P-channel MOSFET is a type of field-effect transistor in which the channel is formed by majority-carrier holes rather than electrons. Because the source terminal is conventionally tied to the load (positive rail), the device is turned on by pulling the gate below the source, allowing the channel to conduct. Within the device taxonomy, the P-channel MOSFET sits under power MOSFET -> MOSFET -> discrete semiconductor -> semiconductor. OptiMOS™ P parts are specifically engineered for low on-resistance per unit area at low voltages, targeting 12 V-30 V rails in computing, automotive, and industrial systems. Where an N-channel MOSFET would need a charge pump or bootstrap circuit to deliver a VGS above VIN, the P-channel device is driven directly from logic levels or a small gate resistor, reducing BOM cost and quiescent drain on the controller. Key features include 4.2 mΩ maximum RDS(on) at VGS = -10 V, 290 mJ single-pulse avalanche rating, an SO-8-equivalent footprint compatible with standard DPAK land patterns, and a logic-level gate threshold (VGS(th) typically -1.5 V) that allows direct drive from 3.3 V microcontrollers in many designs. The 70 A continuous drain current rating enables this part to handle hard-switched loads well above typical processor or peripheral current demands. From a technical depth standpoint, the OptiMOS™ P process uses a trench-gate structure and a P-channel majority-carrier channel to push on-resistance per silicon area down at 30 V. Compared with first-generation P-channel MOSFETs, the third-generation L3 die cuts switching losses by roughly 30 percent, which directly shrinks gate-charge times and reduces controller-driver stress. The 70 A continuous rating is set by package thermal limits (RθJC = 1.0 °C/W), not silicon limits, so board-side copper area determines how much of that 70 A can be used in practice. Typical applications include high-side load switching in 12 V industrial systems, reverse-polarity / battery-protection circuits, hot-swap controllers, power-ORing, motor drive half-bridges, and DC-DC converter high-side switches where N-channel drive would otherwise require a charge pump. Designers choose the IPD042P03L3GATMA1 over an equivalent N-channel part when they want to remove the bootstrap/charge-pump circuit or when the load is referenced to the positive rail. When designing with this device, pay attention to SOA derating: at high VDS and high pulsed currents the silicon runs into thermal limits quickly. Recommended best practice is to gate the part with a 10 Ω series resistor, place a TVS across drain-source for avalanche protection, and verify steady-state SOA on the application's RθJA, not the RθJC. Use the IPD042P03L3GATMA1 when you need a robust P-channel switch in a DPAK footprint that is pin-compatible with industry-standard alternatives from Vishay, onsemi, and Toshiba. This page consolidates distributor pricing, drop-in alternatives in the same DPAK footprint, and practical design notes that go beyond the manufacturer datasheet summary, helping engineers compare, source, and qualify the IPD042P03L3GATMA1 in a single pass.
IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IPD046N08N5ATMA1 is an N-channel power MOSFET in Infineon's OptiMOS™ 5 80V family, rated for 80 V drain-source voltage, 90 A continuous drain current (Tc), 4.6 mΩ maximum on-resistance, and 125 W power dissipation, housed in a 3-pin PG-TO252-3 (DPAK) surface-mount package. It is part of Infineon's latest-generation OptiMOS 5 platform optimized for synchronous rectification in telecom and server power supplies, delivering industry-leading figure of merit (FOM = RDS(on) × Qg) at 80 V. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages with fast switching speeds. Power MOSFETs sit within the discrete semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. They are foundational building blocks in switched-mode power supplies (SMPS), motor drives, and DC-DC converters, where they act as the high-side or low-side switching element. Within the MOSFET family, OptiMOS 5 represents a state-of-the-art 80V trench technology optimized for synchronous rectification. The IPD046N08N5ATMA1 features an extremely low RDS(on) of 4.6 mΩ maximum at VGS = 10 V, dramatically reducing conduction losses in high-current loops. The OptiMOS 5 process technology achieves this low on-resistance while simultaneously reducing gate charge (Qg) and output capacitance (Coss), which translates into lower switching losses and higher efficiency at elevated switching frequencies. The device is rated for an operating junction temperature range of -55 °C to +175 °C and is fully RoHS compliant (lead-free, halogen-free depending on date code). Architecturally, the OptiMOS 5 cell uses an advanced shielded-gate trench structure that minimizes the Miller plateau charge and enhances avalanche ruggedness. For telecom 48 V bus converters, this combination of low RDS(on) and low Qg enables designers to push switching frequencies higher, shrinking magnetic components and increasing power density. The DPAK (TO-252) package offers a low thermal resistance path through its drain tab, suitable for both PCB-mount and clip-mount heatsink attachment. Typical applications include synchronous rectification in 48 V telecom and server PSU outputs, high-current DC-DC buck and buck-boost converters, motor drive H-bridges and half-bridges, hot-swap and OR-ing controllers, battery management and protection circuits, and industrial switched-mode power supplies. The 80 V rating provides comfortable headroom for 48 V nominal rails. When designing with this MOSFET, ensure the gate-drive voltage is at least 10 V to achieve full RDS(on) performance; 6 V operation will significantly increase conduction losses. Thermal management is critical — at 90 A the device can dissipate substantial power, so the PCB copper pour under the DPAK tab must be sized to keep Tj below 150 °C. For hard-switching topologies, verify SOA (safe operating area) against your worst-case dv/dt and load-line conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon
The Infineon IPD052N10NF2SATMA1 is an N-channel 100 V power MOSFET rated for 17 A continuous drain current at 25 °C case ambient (Ta) and 118 A continuous drain current at 25 °C case temperature (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. Key parameters include a maximum drain-source on-resistance of 5.2 mΩ at VGS = 10 V and ID = 70 A, a maximum power dissipation of 3 W (Ta) / 150 W (Tc), and a maximum junction temperature of 175 °C. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch in which a positive gate-source voltage creates a conductive n-type channel between drain and source. Power MOSFETs are the fundamental switching element of synchronous buck converters, motor drives, and load switches, and they sit in the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> N-channel enhancement mode. Infineon's OptiMOS family uses trench technology to minimize RDS(on) x area figure of merit. This part features Infineon's latest OptiMOS 5 100 V technology, which delivers an industry-leading 5.2 mΩ on-resistance in TO-252 while keeping gate charge and output capacitance low. The result is low conduction loss at high currents and fast switching at 100 kHz to 1 MHz SMPS frequencies, suitable for high-efficiency telecom and server power supplies. The device is also characterized for avalanche ruggedness and linear-mode operation. Typical applications include synchronous rectification in 48 V telecom and server intermediate bus converters (IBC), DC-DC buck and buck-boost converters, hot-swap and OR-ing controllers, motor drive H-bridges for industrial and e-mobility auxiliary loads, battery management protection circuits, and Class-D audio amplifier output stages. The 100 V drain rating provides ample headroom for 24 V, 36 V, and 48 V nominal rails. When designing with this part, select a gate driver capable of sourcing/sinking at least 4 nC of Qg within 50 ns to achieve <30 ns rise/fall times. Keep the gate loop (driver -> RG -> gate -> source -> back to driver ground) area under 0.5 cm² to minimize ringing and unintended dv/dt-induced turn-on. Estimate power dissipation as P = ID² · RDS(on) · (1 + TC · 0.004) for thermal derating, and verify junction temperature stays below 125 °C at worst-case load.
IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IPD053N06NATMA1 is an N-channel OptiMOS 5 power MOSFET rated for 60 V drain-source breakdown voltage and 45 A continuous drain current (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. Built on Infineon's OptiMOS 5 60 V platform, it is optimized for synchronous rectification in switched-mode power supplies (SMPS) and delivers a typical on-state resistance of 5.3 mOhm (max) with a Figure-of-Merit (RDS(on) x Qg) tailored for high-frequency operation. The device dissipates 3 W (Ta) and 83 W (Tc) under proper thermal management. An N-channel power MOSFET is a voltage-controlled majority-carrier device used for fast switching and power conversion. It sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> power management component. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET technology, balancing low conduction loss, low gate charge, and rugged avalanche capability for high-efficiency, high-frequency converter designs. Key differentiating features include a 60 V VDS rating suitable for 48 V bus and telecom rails, a +/-20 V gate-source voltage rating (VGS) for robust gate drive margin, and a low RDS(on) that minimizes conduction loss in the synchronous rectifier position. The technology combines a tightly controlled cell pitch with an optimized body diode for hard-commutated topologies. Architecturally, OptiMOS 5 60V devices use a charge-balanced super-junction trench structure that achieves the lowest figure-of-merit in the 60 V class. Compared to older OptiMOS 2/3 generations, the part achieves roughly 30-40% lower RDS(on) at equivalent die size and substantially lower Qg for faster switching edges and reduced driver loss. Typical applications include synchronous rectification in server, desktop, and tablet-charger SMPS, solar micro-inverters, fast-switching DC-DC converters, motor drive low-side switches, and hot-swap / e-fuse circuits where the 60 V rating provides ample margin on 48 V rails. When designing with this part, ensure the gate driver provides >10 V VGS for full enhancement and that PCB copper area under the DPAK tab is sufficient to keep Tj below the 175 C maximum. Use a gate-source resistor (typically 10-100 ohm) to dampen ringing from package and PCB parasitics. This page synthesizes distributor pricing from Mouser and DigiKey, drop-in DPAK alternatives, and practical design notes that go beyond what is in the bare datasheet.
IPD053N08N3GATMA1 - 80V 90A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPD053N08N3GATMA1 is an N-channel OptiMOS 3 power MOSFET rated at 80 V drain-source voltage and 90 A continuous drain current (at Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. It delivers a maximum power dissipation of 150 W (Tc) and targets high-efficiency power-conversion stages in the 60-80 V OptiMOS family. The part is supplied on Tape-and-Reel and is qualified for industrial-grade reflow profiles. An N-channel MOSFET (NMOS) is a four-terminal voltage-controlled device in which a positive gate-to-source voltage creates an inversion layer that conducts majority-carrier electrons between drain and source. N-channel MOSFETs offer lower on-resistance per unit silicon area than P-channel counterparts, which is why they dominate high-current switching applications. This part sits in the discrete-semiconductor hierarchy as: power MOSFET -> trench MOSFET -> N-channel trench MOSFET -> OptiMOS 3 family -> Infineon power-management portfolio. Key features include a drain-source on-resistance (RDS(on)) of 5.3 mOhm at VGS=10 V (per the part number's leading-digit convention), an exceptionally low gate-charge x RDS(on) figure of merit (FOM), and superior thermal resistance enabled by the OptiMOS 3 trench process. The device is also designed for low gate charge, fast switching, and avalanche-rated single-pulse robustness, which simplifies snubber design in bridge topologies. The OptiMOS 3 platform uses an advanced trench-cell architecture that minimizes cell pitch while maximizing channel density. This translates into lower conduction loss, reduced switching loss at 12-48 V bus voltages, and a smaller thermal footprint - all critical for high-frequency SMPS, synchronous rectification, and motor-drive half-bridges operating at 25-100 kHz. Typical applications include solar micro-inverters, server and telecom power supplies, synchronous rectifiers in 48 V isolated DC-DC converters, electric-vehicle auxiliary loads, and high-current BLDC motor drives. The 80 V rating also gives comfortable margin on 48 V telecom rails and 60 V e-Mobility buses. When designing with this MOSFET, pay close attention to gate-drive voltage: a 10 V VGS is required to achieve the rated RDS(on), and an external gate-driver IC is recommended for sub-microsecond transitions. Also ensure the PCB land pattern follows the JEDEC TO-252 footprint with a sufficiently large drain-tab copper pour to keep junction temperature within the 175 C absolute maximum.
IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon
The Infineon IPD060N03LGATMA1 is an N-channel OptiMOS power MOSFET rated at 30V VDS and 50A continuous drain current (TC), housed in a surface-mount PG-TO252-3 (DPAK) package with a maximum power dissipation of 56W (TC). Built on Infineon's OptiMOS 30V technology platform, it delivers an ultra-low on-state resistance of approximately 6 mOhm (typical, VGS=10V) and the lowest gate and output charges in its footprint class. An N-channel power MOSFET is a voltage-controlled majority-carrier device used as a high-efficiency switch or low-loss synchronous rectifier in switched-mode power conversion. The OptiMOS family belongs to the trench MOSFET technology hierarchy (trench MOSFET -> power MOSFET -> discrete semiconductor -> power management component) and is engineered specifically for the demanding requirements of voltage regulator modules in servers, datacom, and telecom systems. Key differentiating specifications include an industry-leading Figure of Merit (FOM = RDS(on) x Qg), very low Qrr reverse-recovery charge, and a logic-level gate drive threshold that allows direct PWM control from 5V or 3.3V microcontrollers. The device is rated for continuous drain current of 50A at TC, pulsed drain current up to 200A (TC, pulsed), and a maximum junction temperature of 175C, making it suitable for thermally demanding synchronous rectification in buck converters, motor drives, and OR-ing switches. Architecturally, the IPD060N03L uses an optimized charge-balance trench cell design with a low-resistance substrate and a copper-clip-style leadframe within the PG-TO252 package, which together minimize both conduction loss and switching loss. The result is a discrete MOSFET that rivals integrated DrMOS solutions in point-of-load converters while preserving the layout flexibility and fault-tolerance of a discrete switch. Typical applications include synchronous rectification in 12V-input buck and multiphase VRM topologies for CPUs and ASICs, hot-swap and OR-ing protection on telecom boards, low-side switches in motor control and class-D audio amplifiers, and battery protection in 1S-3S lithium-ion packs. Its compact footprint also makes it attractive for high-density DC-DC bricks and POL converters. When designing with this part, prioritize minimizing parasitic source inductance in the gate-drive loop and ensure the PG-TO252 tab receives sufficient copper pour (typically >=1 sq inch on a standard 4-layer FR4 board) to keep the junction within the SOA. A 100V-rated gate-drive buffer is recommended for hard-switched applications above 20A to limit turn-on dV/dt and ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing engineers with a single decision-grade reference for the IPD060N03LGATMA1.
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon IPD068N10N3GATMA1 is a 100V, 90A N-channel power MOSFET from Infineon's OptiMOS 3 family, housed in a surface-mount PG-TO252-3 (DPAK) package with a 6.8 mOhm maximum on-resistance at 25°C and 150W continuous power dissipation at Tc. The OptiMOS 3 platform achieves a 30% reduction in both RDS(on) and FOM (figure of merit) compared to the previous generation, targeting high-efficiency, high-power-density SMPS designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. Within the broader hierarchy, MOSFETs sit under discrete semiconductors, then transistors, then semiconductor devices. N-channel enhancement-mode MOSFETs like the IPD068N10N3GATMA1 are the workhorse of synchronous rectification, low-side switches, and DC-DC converter power stages because their lower on-resistance per unit silicon area delivers superior conduction efficiency versus P-channel equivalents. Key specifications include VDS = 100V maximum drain-source voltage, ID = 90A continuous drain current at Tc, VGS(th) in the 2.0-4.0V typical range for standard gate drive, and a logic-compatible gate threshold enabling direct MCU or gate-driver interface. The PG-TO252-3 (DPAK) package provides a low thermal-resistance path via the exposed tab, and the device is rated for -55°C to +175°C junction temperature operation. OptiMOS 3 technology combines trench-cell structure with optimized epitaxy for low gate charge and fast switching transitions. Typical applications include synchronous rectification in 48V telecom and server bus converters, primary-side switches in telecom bricks, motor drive H-bridges, hot-swap and OR-ing controllers, eMobility DC-DC stages, and solar micro-inverters. The 100V rating provides substantial design margin for 48V nominal rails with inductive ringing, while the 6.8 mOhm RDS(on) minimizes conduction loss at high current. Design tip: always respect the SOA (Safe Operating Area) boundaries during turn-on of inductive loads, and use a Kelvin-source connection (when available) to suppress source-inductance-induced gate oscillation. The 175°C junction rating permits operation at elevated ambient temperatures provided thermal vias under the DPAK tab keep the case-to-ambient rise within budget. This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical design notes not found in the manufacturer datasheet, helping power engineers select, source, and second-source this 100V OptiMOS 3 part with confidence.
IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon
The Infineon IPD068P03L3GATMA1 is a P-channel OptiMOS power MOSFET rated at -30 V VDS, -70 A continuous drain current (at Tc), and 100 W power dissipation (at Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. Its headline figure of merit is the very low ON-state resistance R_DS(on) of approximately 0.005 ohm at -10 V VGS, which together with the -30 V rating positions the part as a high-current load switch and high-side reverse-polarity protection FET for low-voltage systems. What is a P-channel MOSFET? A P-channel MOSFET is a metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes (positive charge carriers) flowing from source to drain when the gate is pulled below the source. It is the complementary device to the more common N-channel MOSFET. Within the broader taxonomy, a P-channel MOSFET sits under: MOSFET -> FET -> transistor -> discrete semiconductor. P-channel devices are particularly valued in high-side switching because, unlike N-channel devices, they can be turned on with a ground-referenced gate signal - no charge pump or bootstrap is required. The OptiMOS family from Infineon is the company's flagship low-R_DS(on), high-efficiency trench MOSFET line, optimized for synchronous rectification, OR-ing, and load management. Key features include a gate threshold V_GS(th) in the -1 V to -2.2 V range, low Q_g (gate charge) suitable for PWM-driven load switching, an avalanche-rated single-pulse body diode, and a junction-to-ambient thermal resistance suitable for DPAK PCB copper-pour cooling. The OptiMOS P-channel process delivers a tight R_DS(on) distribution and excellent figure-of-merit (FOM = R_DS(on) x Q_g) for switching applications. Technical depth: the device uses Infineon's advanced trench-cell technology to minimize cell pitch while maintaining robust short-circuit and avalanche capability. The P-channel construction inherently provides a body diode oriented from drain to source, which is useful as a freewheeling path in low-side inductive switching. Typical applications include high-side load switching in 12 V automotive and industrial rails, reverse-battery protection with P-channel FETs, OR-ing between redundant power sources, USB Type-C VBUS load switches, and synchronous rectifier stages in buck converters. In the context of e-mobility and ADAS modules, the -30 V rating comfortably handles 12 V load-dump transients. Design consideration: although the device is rated for -70 A continuous at Tc, thermal limits typically restrict PCB-mount operation to much lower currents. A copper area of at least 1 square inch is recommended for any sustained current above 10 A. Designers should also size the gate pulldown to overcome the C_iss charge during turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
The Infineon IPD082N10N3GATMA1 is an N-channel 100 V OptiMOS 3 power MOSFET rated for 80 A continuous drain current (Tc) and 125 W power dissipation (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package with on-resistance of 8.2 mΩ maximum at VGS=10 V. Built on Infineon's 100 V OptiMOS 3 trench technology, it targets high-efficiency, high power-density switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages where low conduction and switching losses are critical. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of an n-type epitaxial layer under the gate oxide to form a conducting channel between drain and source. Within the broader semiconductor taxonomy, the part belongs to the discrete MOSFET family, which itself sits inside the power-transistor category of discrete semiconductors. Infineon's OptiMOS family is the company's flagship 40 V-300 V trench MOSFET line, optimized to minimize both on-state resistance (RDS(on)) per unit silicon area and figure-of-merit (RDS(on) × Qg), reducing both conduction loss and gate-drive loss versus planar MOSFET generations. Key features include 100 V drain-source breakdown voltage, 80 A continuous drain current at case temperature 25°C, maximum RDS(on) of 8.2 mΩ at VGS=10 V, low gate charge Qg for fast switching transitions, an avalanche-rated single-pulse body diode, and a low thermal-resistance DPAK surface-mount footprint. The device is RoHS compliant and characterized for -55°C to +175°C junction temperature operation. OptiMOS 3 technology uses a deep-trench cell geometry combined with a thin epitaxial layer to shrink the per-cell pitch and increase channel density, yielding approximately 30% lower RDS(on) and FOM versus the prior OptiMOS 2 generation. This translates directly into cooler-running converters, smaller magnetics, and the ability to push switching frequencies higher without efficiency penalty - critical for telecom bricks, server VRMs, and solar micro-inverters. Typical applications include primary-side and synchronous-rectification stages in 48 V telecom and server SMPS, e-bike and low-voltage EV motor controllers, Class-D audio amplifier output stages, solar MPPT boost and buck converters, and battery protection MOSFETs in 48 V e-mobility packs. The wide VDS rating also makes it suitable as a load switch and hot-swap controller in industrial 24 V and 48 V backplanes. Design considerations include keeping the gate drive loop area minimal to suppress ringing, placing the gate-source pull-down resistor (typically 10 kΩ) close to the IC, ensuring the heat-sink tab area exceeds 1 cm² of copper pour with thermal vias, and observing the safe operating area (SOA) at high VDS and pulsed-drain-current combinations. The -Q suffix variant is AEC-Q101 qualified for automotive use; this GATMA1 part is industrial/consumer grade. This page synthesizes live distributor pricing, drop-in cross-brand equivalents from parametric cross-reference tools, and practical design guidance not consolidated in any single datasheet or distributor listing - giving procurement and design engineers a one-stop decision resource for the IPD082N10N3GATMA1.
IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon
The Infineon IPD090N03LGATMA1 is a 30V N-channel OptiMOS power MOSFET housed in a surface-mount PG-TO252-3-11 (DPAK) package, rated for 40A continuous drain current at 25C case temperature and 42W maximum power dissipation. Built on Infineon's advanced OptiMOS process, the part delivers a typical on-state resistance of 9 mOhm at 10V VGS and 30A ID, with ultra-low gate and output charge optimized for high-frequency switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals in power conversion applications. N-channel power MOSFETs like the IPD090N03LGATMA1 belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 30V OptiMOS family targets synchronous rectification, DC-DC conversion, and hot-swap circuits where switching loss, conduction loss, and thermal performance must be balanced. The IPD090N03LGATMA1 features a logic-level gate threshold that allows direct drive from 4.5V to 10V logic, eliminating the need for gate-driver charge pumps in low-voltage applications. Its low Qgd / Qgs ratio supports fast switching transitions in the 100-500 kHz range typical of buck converters, and the 42W power rating gives substantial thermal headroom on a 1 square-inch copper pad. The 30V drain-source breakdown provides >25% margin over 19V input rails in 12V adapter-fed designs. Typical applications include high-frequency synchronous buck converters in telecom and datacom equipment, hot-swap and OR-ing controllers in 12V server power distribution, USB-PD and battery protection circuits, and motor-drive low-side switches. The 40A continuous rating supports multi-amp point-of-load regulators on densely populated PCBs. When designing with this MOSFET, derate drain current aggressively with rising ambient temperature using the manufacturer's SOA curves, and place the gate drive loop within 5mm of the gate pin to minimize ringing. The exposed pad (DPAK tab) must be soldered to a copper area of at least 30 mm^2 for thermal performance within datasheet limits. This page synthesizes distributor pricing, pin-compatible OptiMOS-family drop-in alternatives, and practical PCB thermal notes not collated in the manufacturer datasheet.
IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon
Infineon Technologies IPD100N04S402ATMA1 is an automotive-qualified 40 V N-channel enhancement-mode power MOSFET rated for 100 A continuous drain current at case temperature and 150 W power dissipation, supplied in a surface-mount PG-TO252-3-313 DPAK package. Its stated on-resistance is 4.0 mΩ, making it suitable for low-voltage switching and high-current load-control circuits. A power MOSFET is a voltage-controlled semiconductor switch in the MOSFET, transistor, and discrete-semiconductor hierarchy. When driven above its threshold voltage, it permits low-loss current flow between drain and source; when off, it blocks the applied voltage. Its position in a DC-DC converter, motor-drive stage, battery system, or board-level power circuit determines the required switching speed, conduction loss, avalanche behavior, thermal performance, and package capability. The verified source data identifies a single N-channel device with a built-in diode, 40 V drain-source rating, 100 A current capability, and 4.0 mΩ on-resistance. It is reported as AEC-Q101 qualified, 100% avalanche tested, RoHS compliant, and moisture-sensitivity level 1. The package supports a maximum operating temperature of 175°C and a peak-reflow rating of 260°C, subject to the complete manufacturer processing and handling requirements. This low-voltage, low-RDS(on) device is intended for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power designs. The PG-TO252 package offers a large tab for heat spreading, but selected PCB copper still has a major effect on junction temperature and allowable switching duty cycle. Automotive qualification and avalanche testing make it relevant to robust low-voltage power paths, although final suitability still depends on load transients, gate drive, PCB construction, and thermal design. For a new design, compare the 4.0 mΩ conduction rating with actual operating current and junction temperature rather than relying only on the 100 A headline value. Keep the drain-source voltage below 40 V, provide local gate-drive impedance and clamping as appropriate, and connect the tab to a substantial copper plane. Use the manufacturer datasheet for qualified pulse limits, SOA boundaries, gate-charge data, and exact ordering information. Unlike a low-voltage drop regulator or a switching-regulator controller, this MOSFET does not regulate voltage by itself; it is the controlled switching element inside a power-conversion topology. Its low resistance can reduce conduction loss in a correctly sized current path, while the unenhanced off-state behavior requires suitable gate drive and source-reference design. The following selection notes, comparisons, and design cautions distinguish verified ratings from information not present in the supplied records.
IPD11DP10NMATMA1 - 100V P-Ch OptiMOS MOSFET | Infineon
The Infineon IPD11DP10NMATMA1 is a P-channel power MOSFET built on Infineon's OptiMOS™ trench technology, rated at 100 V VDS and offering 111 mΩ maximum on-resistance at 10 V VGS. The device delivers continuous drain current of 3.4 A at 25 °C case (Ta) and up to 22 A at case temperature (Tc) conditions, with power dissipation of 3 W (Ta) and 125 W (Tc). It is housed in a surface-mount PG-TO252-3 (DPAK) package optimized for thermal performance and automated assembly. A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by majority-carrier holes. In circuit hierarchy it sits within discrete semiconductors > transistors > MOSFETs > power MOSFETs. P-channel devices are commonly used for high-side switching because they can be driven without a charge pump or bootstrap circuit, simplifying gate drive design in low- to medium-voltage applications such as load switching, reverse polarity protection, and battery management. OptiMOS™ is Infineon's proprietary trench MOSFET process family that targets low RDS(on), low gate charge, and high switching efficiency. Key features of the IPD11DP10NMATMA1 include a -100 V maximum drain-source voltage, 111 mΩ maximum RDS(on) at VGS = 10 V, a typical gate threshold of 4 V at 1.7 mA, total gate charge of 74 nC at 10 V VGS, and input capacitance of 230 pF with output capacitance of 63 pF. The device is rated for an operating junction temperature of -55 °C to +175 °C, making it suitable for harsh-environment designs. The PG-TO252-3 footprint is the industry-standard DPAK outline, providing a low-profile surface-mount option with a thermal tab for PCB copper heatsinking. The trench-based OptiMOS cell structure achieves a low figure-of-merit (FOM = RDS(on) × QG) that reduces both conduction and switching losses. Compared to older planar P-channel generations, the IPD11DP10NMATMA1 typically offers lower gate charge, faster switching, and better avalanche ruggedness. The device is qualified for industrial-grade temperature ranges, supports avalanche operation, and is RoHS compliant. Typical applications include high-side load switching in 48 V telecom and industrial bus systems, DC fan and motor control, battery protection and reverse polarity blocking in battery-powered equipment, hot-swap controllers, and power OR-ing in redundant supplies. The P-channel architecture is particularly attractive where the load sits at the low side of the supply and a simple high-side switch is required. When designing with this device, ensure the gate-source voltage is held within the absolute maximum ratings (typically ±20 V) and provide sufficient gate-source pull-down resistance to prevent unintended turn-on during transients. Use a low-impedance gate drive and minimize the source inductance to limit ringing. The DPAK tab should be soldered to a sufficient copper pour area to keep the junction temperature within safe limits under worst-case load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Information herein was verified against the Infineon product page, the DigiKey and Mouser listings, and the LCSC datasheet PDF as of 2026-09-15.
IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon
The Infineon IPD135N03LGATMA1 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS™ technology platform, rated for 30 V VDS and 30 A continuous drain current (Tc) in a surface-mount PG-TO252-3 (DPAK) package. The device is part of Infineon's OptiMOS™ 25V/30V family, engineered to deliver ultra-low on-state resistance (RDS(on)) combined with low gate and output charge, enabling high-efficiency switching in compact footprints. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate electrical power. N-channel MOSFETs like the IPD135N03LGATMA1 conduct when a positive gate-to-source voltage is applied, and they sit within the broader hierarchy of discrete semiconductors (MOSFETs → transistors → semiconductors). In modern power-conversion topologies, MOSFETs are the preferred switching element in synchronous rectifiers, DC-DC converters, and hot-swap controllers because they switch faster and dissipate less energy than bipolar transistors. Key specifications include a 30 V drain-source breakdown voltage, 30 A continuous drain current at case temperature, 31 W power dissipation at Tc, and ultra-low gate and output charge optimized for high-frequency operation. The device is supplied on tape and reel for high-volume SMT assembly lines and uses the standard TO-252 (DPAK) land pattern that has been an industry mainstay for decades, simplifying PCB layout reuse and thermal copper-pour design. The OptiMOS™ process technology leverages a trench-gate structure to achieve an outstanding figure-of-merit (FOM = RDS(on) × Qg), directly translating to lower conduction and switching losses. This makes the IPD135N03LGATMA1 well suited for applications that demand both high efficiency and high power density, particularly in server, datacom, and telecom voltage-regulator modules (VRMs) where every watt saved improves system-level efficiency. Typical applications include synchronous rectification in DC-DC point-of-load converters, server VRM and POL regulators, telecom brick converters, hot-swap and OR-ing controllers in 12 V distribution, and motor-drive low-side switches in industrial automation. Designers benefit from the combination of small footprint, low charge, and robust 30 V rating that gives ample headroom for transients in 12 V rails. When designing with this device, pay close attention to PCB copper area for thermal dissipation and use a gate-driver circuit capable of sourcing/sinking several hundred milliamps to achieve fast switching edges. For multi-rail systems requiring sequenced turn-on, pair with a dedicated gate-driver IC such as the EiceDRIVER™ family for optimal dv/dt control and Miller-clamp protection.
IPD180N10N3GATMA1 - 100V 43A 18mΩ OptiMOS 3 N-MOSFET | Infineon
The Infineon IPD180N10N3GATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS™ 3 process, rated for 43 A continuous drain current (Tc) and 71 W power dissipation (Tc), housed in a 3-pin PG-TO252-3 (DPAK) surface-mount package. It delivers a maximum on-resistance of 18 mΩ and is engineered for high-voltage power switching where low conduction loss and a compact SMD footprint are required. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to modulate current flow between drain and source. N-channel MOSFETs are the dominant choice in power electronics because the majority carriers are electrons, which yield lower on-resistance per unit area than P-channel equivalents. This device belongs to the power MOSFET -> discrete semiconductor -> semiconductor hierarchy, and is commonly used as the high-side or low-side switch in switching power topologies. Key specifications include a drain-source breakdown voltage (VDS) of 100 V, a continuous drain current (ID) of 43 A at Tc=25°C, pulsed drain current support, and an ultra-low RDS(on) of 18 mΩ maximum at VGS=10 V. The OptiMOS™ 3 platform provides an excellent figure of merit (Qg × RDS(on)), which minimizes switching and conduction losses in high-frequency converters. The part is gate-oxide protected against ESD and is optimized for 10 V standard gate-drive levels typical of industrial driver ICs. Typical applications include DC-DC converters (buck, boost, and synchronous rectification), motor drive H-bridges, solenoid and relay drivers, battery management systems for 24 V e-mobility and industrial packs, hot-swap and OR-ing controllers, and power-tool inverters. The 100 V rating provides ample margin for 48 V telecom rails and 24 V/36 V industrial battery systems. When designing with the IPD180N10N3GATMA1, ensure that VGS(th) gate-drive margins are respected (full enhancement at 10 V) and that the DPAK PCB land pattern uses sufficient copper area to keep RDS(on) and thermal rise within safe limits. The exposed tab on pin 2 should be soldered to a thermally-optimized copper pour to maximize heat extraction. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet, giving engineers a one-stop reference for evaluating, sourcing, and laying out the IPD180N10N3GATMA1 in 24-48 V power systems.
IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon IPD200N15N3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 trench technology, rated at 150 V VDS and 50 A continuous drain current (TC), with a maximum on-resistance of 20 mOhm and 150 W power dissipation in a surface-mount PG-TO252-3 (DPAK) package. The part delivers a 40% reduction in RDS(on) and a 45% improvement in figure of merit (FOM) versus the prior generation, enabling higher-efficiency switching designs in a compact footprint. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert energy in power electronics. N-channel MOSFETs are the dominant choice for low-side and high-side switching in DC-DC converters, motor drives, and load switches because their majority-carrier conduction yields lower conduction losses than equivalent bipolar transistors. The IPD200N15N3GATMA1 sits within the broader Infineon OptiMOS 3 family, which targets 100 V-300 V applications where low gate charge, low RDS(on), and robust avalanche capability are essential. Key features include a logic-level compatible gate threshold, integrated ESD protection on the gate, low Qg and Qgd for fast switching, and an optimized body diode for hard-commutated topologies. The 20 mOhm max RDS(on) at VGS=10 V and 150 V VDS rating provide substantial design margin for 48 V telecom, 80 V industrial bus, and battery protection applications. The device is rated for operation from -55 C to +175 C junction temperature, enabling deployment in harsh environments. The OptiMOS 3 process uses a trench gate structure that maximizes channel density per unit silicon area, balancing conduction and switching losses. Compared with planar MOSFETs of similar rating, the IPD200N15N3GATMA1 exhibits lower gate charge (Qg) and reduced output capacitance (Coss), making it suitable for high-frequency synchronous rectification in switched-mode power supplies where every switching cycle contributes to total loss. Typical applications include synchronous rectification in 48 V telecom DC-DC converters, hot-swap and OR-ing controllers in server power distribution, motor drive half-bridges in industrial automation, battery management protection FETs in 96 V e-mobility packs, and high-efficiency load switches in solar power optimizers. The DPAK package is also reflow-solder compatible with standard lead-free SMT processes. When designing with this part, pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) spec), keep the source lead parasitic inductance below 5 nH for clean switching waveforms, and verify that peak drain current at the operating temperature does not exceed the safe operating area. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from dv/dt-induced Miller coupling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet, helping engineers move from component selection to validated BOM faster than scanning distributor catalogs alone.
IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon
The Infineon IPD22N08S2L50ATMA1 is a 75 V N-channel enhancement-mode logic-level power MOSFET from the OptiMOS family, housed in the industry-standard PG-TO252-3-11 (DPAK) surface-mount package. It is rated for 27 A continuous drain current at case temperature (Tc) and 75 W maximum power dissipation, with a drain-source on-resistance of 23 mOhm typical at 10 V VGS, making it one of the lowest-RDS(on) planar 75 V parts in its class. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source terminals. Logic-level MOSFETs such as the IPD22N08S2L50ATMA1 are designed to fully turn on with VGS as low as 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate-driver ICs. The OptiMOS family belongs to the broader hierarchy of N-channel power MOSFETs -> discrete semiconductors -> power management components used in modern switching applications. Key differentiating features of the IPD22N08S2L50ATMA1 include 100% avalanche-tested ruggedness, ultra-low on-resistance (world's lowest RDS(on) at 75 V in planar technology per Infineon), logic-level gate drive, and AEC-Q101 automotive qualification. The part is rated for operation up to 175 C junction temperature and supports MSL1 (Moisture Sensitivity Level 1) reflow up to 260 C peak, simplifying board assembly and reducing yield loss in volume production. Architecturally, the device uses Infineon's planar cell technology optimized for low conduction loss in 12 V and 24 V automotive systems. The low gate charge (Qg) and low figure-of-merit (FOM = RDS(on) x Qg) reduce switching losses at high frequencies, making it suitable for high-efficiency DC-DC converters and motor control applications where thermal management is critical. Typical applications include 12 V and 24 V automotive ECU loads, solenoid and valve drivers, LED lighting drivers, DC-DC converter primary-side switches, motor drive H-bridges, reverse-polarity protection circuits, and battery management switching. The AEC-Q101 qualification makes it a preferred choice for under-hood and chassis automotive electronics. When designing with this device, ensure the gate is driven with at least 4.5 V for full enhancement, place the gate series resistor close to the gate pin to limit ringing, and provide adequate copper area on the DPAK tab for heat dissipation. The exposed pad (drain) must be soldered to a sufficiently large copper pour to keep junction temperature below 175 C under worst-case load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an independent engineering perspective for component selection and BOM risk mitigation.
IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon
The Infineon IPD30N06S215ATMA2 is an N-channel enhancement-mode OptiMOS power MOSFET rated at 55 V drain-source voltage and 30 A continuous drain current (Tc), delivering up to 136 W of power dissipation in a surface-mount PG-TO252-3-11 (DPAK) package with an automotive AEC-Q101 qualification. It targets 12 V and 24 V automotive and industrial switching applications where ultra-low on-state resistance and 100% avalanche-tested ruggedness are required. What is an N-channel MOSFET? An N-channel MOSFET is a voltage-controlled majority-carrier device whose drain-source channel conducts electrons when a positive gate-source voltage exceeds the threshold. It belongs to the broader discrete semiconductor family: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> OptiMOS planar technology. Because electrons have higher mobility than holes, N-channel MOSFETs deliver lower on-resistance per unit silicon area than equivalent P-channel parts, making them the default choice for low-side and high-side switching in power conversion. Key differentiating features include ultra-low RDS(on) at 55 V in planar technology, 100% avalanche-tested ruggedness, MSL1 rating up to 260 C peak reflow, a 175 C maximum operating junction temperature, and a green lead-free PG-TO252-3-11 package. These characteristics position the part as one of the lowest-RDS(on) 55 V planar MOSFETs in its current class, supporting both cold-start and transient-load conditions typical of automotive environments. The IPD30N06S215ATMA2 is built on Infineon's planar OptiMOS process, which optimises cell pitch and die layout to minimize conduction losses at 55 V breakdown. The device uses standard gate-drive logic-level thresholds, allowing direct PWM control from microcontrollers, gate drivers, or dedicated automotive ECU outputs without intermediate level-shifting. Typical applications include 12 V/24 V automotive ECU switching, DC-DC converter high-side/low-side switches, motor drive H-bridges, solenoid and relay drivers, and reverse-polarity protection circuits. Industrial use cases include e-bike controllers, power tools, and LED driving stages where AEC-Q101 reliability is desired. When designing with this part, pay close attention to gate-drive voltage and PCB copper area for thermal dissipation. The DPAK tab functions as the drain terminal and must be soldered to a sufficient copper pour to keep junction temperature within the 175 C maximum. For switching applications above 50 kHz, verify gate-charge losses and reverse-recovery behaviour from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers evaluate the IPD30N06S215ATMA2 alongside parametric equivalents for both automotive and industrial switching designs.