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2EDL8123GXUMA1 - 120V Boot 3A/4A HS/LS Gate Driver | Infineon
The Infineon 2EDL8123GXUMA1 is a 120 V bootstrap, junction-isolated half-bridge gate driver IC delivering 3 A source and 4 A sink drive capability in a PG-VDSON-8-4 (8-pin VSON) package. It is designed to drive the gates of power MOSFETs and IGBTs in high-frequency switching applications. The device integrates a low-side and high-side driver with a built-in bootstrap diode, simplifying half-bridge designs and reducing external component count. A gate driver IC is an interface circuit that translates low-power control signals from a microcontroller, DSP, or PWM controller into the high-current drive voltages required to switch power transistors (MOSFETs, IGBTs, GaN HEMTs) on and off efficiently. Gate drivers sit hierarchically between the controller IC and the power stage, forming a critical part of the power conversion signal chain. Within power management, they belong to the power MOSFET driver subcategory alongside isolated gate drivers, low-side drivers, and high-side drivers. The 2EDL8123 belongs to Infineon's EiceDRIVER family of junction-isolated gate drivers, optimized for hard-switched and resonant topologies where compact size, high drive strength, and integrated bootstrap functionality are required. Key features include 3 A typical source current (I_source) and 4 A typical sink current (I_sink) for fast switching transitions, 120 V maximum bootstrap voltage (V_BS) rating, integrated bootstrap diode, undervoltage lockout (UVLO) for both V_CC and V_BS rails, and TTL/CMOS-compatible logic inputs. The non-inverting input configuration simplifies direct microcontroller interfacing. The driver supports switching frequencies up to several hundred kHz depending on gate charge and operating conditions, making it suitable for high-density power converters. The 2EDL8123 uses Infineon's junction-isolation (JI) technology to provide galvanic isolation between the low-voltage logic input and the high-voltage switching node. The integrated bootstrap diode eliminates an external component and reduces PCB footprint. Typical propagation delay is in the tens-of-nanoseconds range, enabling accurate PWM timing in synchronous rectification and motor drive applications. Typical applications include synchronous buck and boost DC-DC converters, motor drive half-bridges for BLDC and PMSM motors, solar microinverters, industrial switched-mode power supplies (SMPS), and class-D audio amplifiers. The wide bootstrap voltage range also supports 100 V and 120 V bus systems. According to the manufacturer datasheet, the device is qualified for industrial operating temperatures from -40 C to +125 C. When designing with this driver, select an external bootstrap capacitor based on the gate charge of the driven MOSFET and the switching frequency. A UVLO setting on the high-side supply prevents partial turn-on of the high-side switch during startup. Place the driver as close as possible to the driven MOSFETs to minimize parasitic gate-loop inductance. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select drop-in equivalents and optimize half-bridge layouts.
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
The Infineon 2EDL8124GXUMA1 is a 120 V bootstrap, 3 A source / 4 A sink, junction-isolated half-bridge gate driver IC housed in a 4 mm x 4 mm PG-VDSON-8-4 package. It is designed to drive the high-side and low-side N-channel MOSFETs of a synchronous buck, half-bridge, or full-bridge switching converter, with integrated bootstrap diode, shoot-through protection, and independent TTL-compatible inputs with built-in hysteresis. The high-side channel tolerates a 120 V bootstrap supply and switches at typical propagation delays below 50 ns, enabling multi-MHz operation in telecom and datacom point-of-load converters. What is a junction-isolated gate driver? A gate driver is a power-management IC that sits between a low-current control PWM output and the high-capacitance gate of a switching MOSFET or GaN device, providing the current and voltage translation required to switch the device on and off quickly. Junction isolation (JI) replaces the older level-shifter + transformer bootstrap scheme with an on-die high-voltage transistor, reducing BOM, shrinking board area, and improving noise immunity. Within the broader taxonomy, the 2EDL8124GXUMA1 belongs to gate driver ICs -> MOSFET/IGBT drivers -> power management ICs -> analog and mixed-signal semiconductors. Key features include 3 A peak source current, 4 A peak sink current, integrated 120 V bootstrap diode, undervoltage lockout (UVLO) on both VCC and VBS rails, TTL-compatible logic inputs with hysteresis, and a 4 mm x 4 mm thermally-enhanced VSON package with an exposed pad that keeps junction temperature rise manageable at continuous switching operation. The wide VBS supply range of up to 120 V and the 1 ns typical delay matching between channels minimize dead-time losses in high-frequency half-bridges. The architecture combines a low-side driver powered directly from VCC (typical 10 V to 17 V) with a high-side driver powered by a bootstrap capacitor refreshed through the on-chip bootstrap diode during the low-side on-time. The junction-isolation barrier carries the high-side logic-level signal from input to high-side gate, with propagation delay matched within 1 ns between rising and falling edges to control dead-time accurately. Typical applications include telecom and datacom intermediate bus converters, 48 V to point-of-load buck stages, industrial motor-driver half-bridges, solar micro-inverter power stages, and high-density server VRM blocks. In all of these the part delivers the rapid, matched-edge switching that high-efficiency synchronous rectification requires. When designing with the 2EDL8124GXUMA1, place the bootstrap capacitor (typically 100 nF X7R) close to the VBS pin and the VCC decoupling capacitor close to the VCC pin, and route the high-side gate return (HS_GND / SW node) to minimize parasitic inductance. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within the 150 C absolute maximum. This page synthesizes Infineon distributor pricing from DigiKey/Mouser/Octopart, drop-in alternatives in the same PG-VDSON-8-4 footprint, and practical design notes that complement - not just repeat - the manufacturer datasheet.
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
The Infineon 2EDL900G3XTMA1 is a 120 V junction-isolated dual-channel level-shift gate driver IC with 4 A source / 6 A sink drive strength, integrated current sense amplifier, and configurable deadtime/mode logic, housed in a 16-pin TSNP (3x3 mm) package. It targets high-side, low-side, and half-bridge configurations driving silicon MOSFETs or enhancement-mode GaN transistors in switching power topologies. What is a gate driver? A gate driver is a power-management IC that sits between a low-power control signal (such as a microcontroller PWM output) and a power semiconductor switch (MOSFET, IGBT, or GaN FET). It provides the high peak currents and voltage levels needed to charge and discharge the gate of the power device quickly, while providing level shifting, isolation, and protection features. Gate drivers sit within the broader power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor, and are essential building blocks of any switched-mode power supply (SMPS), motor drive, or Class-D audio amplifier. Key features of the 2EDL900G3 include 4 V to 16 V gate-drive output, a configurable deadtime or turn-on delay block to prevent shoot-through, and an integrated current-sense amplifier that eliminates an external op-amp in many current-mode control loops. The driver supports multiple PWM modes including tri-state single PWM, HSCC HS, HSCC LS, Hi/Li, and Hi/Li inverted, making it adaptable to nearly any digital controller interface. The 120 V junction-isolation rating supports bus voltages typically up to 80 V depending on derating. The architecture combines a level-shift high-side channel with a low-side channel on a single die, using Infineon's junction-isolation (JI) process instead of thicker galvanic isolation. This yields a compact 3x3 mm TSNP footprint with strong 4 A source / 6 A sink drive capable of switching GaN FETs in under 10 ns. The integrated current-sense amplifier provides a differential output proportional to the switched current, simplifying peak-current-mode control. Typical applications include 48 V telecom and server point-of-load converters, industrial SMPS, eMobility auxiliary power, Class-D audio amplifiers, and synchronous rectifier drivers. The GaN-compatible drive voltage range makes it a strong choice for new high-frequency designs. When designing with this part, verify that the 4 V minimum output drive suits your FET's gate-threshold requirement; some logic-level GaN FETs need only 3.3 V drive. The exposed pad (EP) must be soldered to a sufficiently large copper island for thermal relief, as the 4 A peak currents create brief but high dissipation events during switching. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and reference designs - information not aggregated on the manufacturer product page alone.
2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon
The Infineon 2EDN7434RXTMA1 is a 4 A dual-channel low-side EiceDRIVER gate driver IC housed in a PG-TSSOP-8 package (3 mm body width), designed to drive N-channel and P-channel MOSFETs as well as wide-bandgap (WBG) devices such as GaN and SiC transistors. Each of the two output channels can source and sink up to 5 A peak current with low output resistance, enabling fast switching transitions that minimize switching losses in high-frequency power-conversion stages. The non-inverting logic inputs accept LV-TTL compatible signals and tolerate absolute input voltages from -12 V to +22 V, simplifying interface to microcontrollers and digital controllers. A low-side gate driver is a specialized power-management IC that sits between a low-power control signal (from a microcontroller, DSP, or PWM controller) and the gate of a low-side power switch. Within the broader semiconductor taxonomy, gate drivers belong to the power management IC category, sitting alongside voltage regulators, supervisors, and motor drivers. They serve as a critical buffer that translates low-current logic signals into the high peak currents needed to rapidly charge and discharge the large input capacitance of power MOSFETs, IGBTs, and WBG transistors. Without a dedicated gate driver, switching speeds would be limited by the controller's weak output stage, leading to excessive heat dissipation and poor efficiency. The 2EDN7434RXTMA1 features tight timing specifications with typical propagation delays of 19 ns, matched channel-to-channel delays for balanced switching, and integrated active output voltage clamping to protect downstream devices from over-voltage spikes. Independent dual outputs allow flexible half-bridge, synchronous-rectifier, and dual-MOSFET topologies, while the small PG-TSSOP-8 footprint (3.0 x 3.0 mm) saves board area in compact designs. The device operates from a wide supply range and is characterized for industrial temperature grades, suiting it for high-density power designs. Typical applications include switch-mode power supplies (SMPS), DC-DC converter power stages, synchronous rectifier drivers, motor-control half-bridges, and Class-D audio amplifiers. The driver is also well-suited for driving GaN and SiC transistors where fast edge rates are critical to minimizing switching loss. Its high peak current capability and matched channels also make it appropriate for digital-point-of-load (POL) converters and telecom infrastructure. When designing with this driver, place the bootstrap supply capacitor (if used) and bypass capacitors as close as possible to the device pins to minimize parasitic inductance. The low output resistance helps contain EMI by producing controlled dV/dt edges; however, careful PCB layout is still required to avoid unwanted ringing on the gate traces. This page consolidates pricing, drop-in alternatives, and application guidance drawn from the manufacturer datasheet and distributor data, offering a practical reference not duplicated on standard distributor listings.
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
The Infineon 2EDN7524GXTMA1 is a fast dual-channel 5 A low-side gate driver IC housed in an 8-pin PG-WSON-8-1 package, optimized for driving standard MOSFETs, superjunction MOSFETs, and GaN power switching devices. According to the Infineon datasheet, the part delivers 5 A source/sink drive current with rail-to-rail outputs, 1 ns delay matching between channels, and TTL/3.3 V CMOS-compatible inputs that tolerate -10 V to +20 V on the control pins. Its input-voltage robustness against latch-up and electrical overstress induced by parasitic ground inductance makes it well suited to high-frequency switching topologies. A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or DSP) and a high-power discrete switch (MOSFET, IGBT, or GaN HEMT). It provides level shifting, high peak-current drive, and isolation of the controller from the switching transients on the power stage. Within the system hierarchy, the 2EDN7524G belongs to the gate-driver family, which sits below the system MCU and above the power-switching devices in DC-DC converters, motor drives, and Class-D audio amplifiers. Key differentiating specifications include 5 A peak source/sink drive current (sufficient for sub-100 ns switching of large MOSFETs), 1 ns channel-to-channel delay matching (critical for synchronous-rectifier timing), a wide -10 V to +20 V input voltage tolerance on the logic pins, and a propagation delay of around 20 ns. The PG-WSON-8-1 package with an exposed pad provides low thermal resistance and a compact 3 mm x 3 mm footprint for high-density power designs. The device uses a non-inverting logic topology and provides separate source/sink output stages that can be paralleled for higher drive current. Internal Under-Voltage Lockout (UVLO) protects the power stage by holding the outputs low until the supply rail is stable. The 5 A drive strength enables fast turn-on/turn-off transitions, reducing switching losses in high-frequency applications. Typical applications include synchronous-rectifier drive in DC-DC buck/boost converters, half-bridge and full-bridge converters, Class-D audio amplifiers, motor-drive power stages, and GaN-based point-of-load converters. Its 1 ns delay matching makes it particularly valuable in synchronous-rectifier and half-bridge topologies where timing skew directly converts to shoot-through losses. When designing with this part, place bypass capacitors as close as possible to VCC and GND. Use a 4-layer PCB layout with a continuous ground plane under the exposed thermal pad to manage switching transients. Always verify that the gate-drive voltage level matches the requirements of the driven MOSFET or GaN device; for standard MOSFETs, 10 V drive is typical, while enhancement-mode GaN HEMTs often require only 5-6 V. This page synthesizes distributor pricing, drop-in alternatives drawn from the Infineon 2EDN EiceDRIVER family and competitors, and practical design notes not found in the manufacturer datasheet alone.
2EDN7533BXTSA1 - Dual 5A Low-Side Gate Driver SOT-23-6 | Infineon
The Infineon 2EDN7533BXTSA1 is a dual-channel, low-side 5 A gate driver IC in a 6-pin SOT-23 (PG-SOT23-6-1) package, engineered for driving power MOSFETs and wide-bandgap (WBG) devices such as GaN and SiC transistors. Each channel delivers ±5 A source/sink peak current, with a propagation delay of 19 ns (typical) and tight channel-to-channel matching that keeps timing skew below 1 ns, enabling high-frequency switching in compact DC-DC and motor-drive topologies. Background: A gate driver is a power-management IC that sits between a low-power control signal (PWM from a microcontroller or controller IC) and the high-current gate of a power semiconductor switch. Low-side drivers specifically reference the source/emitter of the switch to ground and pull the gate up/down to VDD/0V. Within the broader taxonomy, gate drivers belong to: gate driver IC -> power management IC -> power semiconductor driver -> signal chain/power interface. Gate drivers are essential whenever the controller cannot source/sink enough current to switch the power device quickly, which is nearly always true for modern WBG devices with sub-nC gate charge requirements at MHz speeds. Key features include a wide 4.5 V to 20 V supply range, integrated active output voltage clamping for MOSFET gate protection, under-voltage lockout (UVLO) for safe start-up, and LV-TTL compatible inputs that tolerate -12 V to +22 V absolute maximum. The inverting logic variant (suffix -33) flips the polarity of each channel, useful in half-bridge or synchronous-rectifier control where the controller outputs an active-low PWM. The SOT-23-6 footprint occupies only 2.9x1.6 mm, enabling extremely compact power stages. Architecturally, the device uses a matched-pair output stage design with tightly-trimmed timing, ensuring that propagation delays are consistent across temperature and process. The integrated bootstrap-style clamping protects against dv/dt-induced gate over-voltage when driving WBG devices - a critical feature for GaN HEMTs that typically have ±7 V gate ratings. Typical applications include synchronous buck/flyback DC-DC converters, half-bridge and full-bridge motor drivers, class-D audio amplifiers, and high-frequency GaN/SiC switching converters. The inverting variant is particularly suited to controllers that natively drive the low-side FET with a low-true PWM, eliminating an external logic inverter. When designing with this part, place input/output bypass capacitors (typically 100 nF ceramic) within 2 mm of the VDD and GND pins. Maintain a 4-layer or 2-layer PCB with a low-impedance ground return under the driver to handle the 5 A peak di/dt without inductive ringing. Derate peak current for continuous operation above 100 kHz. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and application-specific design notes not found in the standalone manufacturer datasheet, providing a single engineering reference for sourcing and substitution decisions.
2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon
The Infineon 2EDN7533RXTMA1 is a dual-channel, low-side gate driver IC delivering up to 5 A peak source/sink current from a compact PG-TSSOP-8 (HTSSOP) package. It features two independent inverting driver channels with 1.3 ns typical channel-to-channel delay matching and under-voltage lockout (UVLO) protection per channel. The driver targets high-frequency power conversion in synchronous rectification, telecom DC-DC bricks, and Class-D audio stages. A low-side gate driver is a power-management IC that switches the gate of a low-side MOSFET or IGBT to ground, controlling its turn-on and turn-off from a low-voltage logic signal (typically 3.3 V or 5 V PWM). Within the system hierarchy, gate drivers sit between the controller IC (microcontroller, DSP, or PFC controller) and the power MOSFETs, providing the high peak currents needed to charge and discharge gate capacitances quickly. Low-side drivers in particular manage the lower switch in a half-bridge or the flyback/forward return switch, where the source/emitter is referenced to system ground. The 2EDN family from Infineon's EiceDRIVER portfolio is engineered for very low propagation delay, enabling hard-switched topologies up to several hundred kHz. Key specifications include 5 A peak output current with 0.5 ohm typical output resistance (pull-up) and 0.3 ohm pull-down, 19 ns typical propagation delay, and an absolute maximum VDD of 25 V (recommended 4.5 V to 20 V). The device operates across -40 C to +150 C junction temperature and accepts LV-TTL logic inputs that tolerate -12 V to +22 V transients. The -R suffix in 2EDN7533R indicates inverting input polarity. Architecturally, the 2EDN7533R uses matched CMOS output stages with independent UVLO comparators per channel, ensuring one rail can be brought up before the other without latch-up. The integrated bootstrap-free design (low-side only) simplifies PCB layout and eliminates the high-side level-shift losses found in half-bridge drivers. Typical applications include synchronous-rectifier MOSFET driving in telecom and server DC-DC converters, Class-D audio amplifier output stages, motor-drive low-side switches, and high-frequency point-of-load (POL) converters. The dual independent channels also fit OR-ing FET control, low-side switches in digitally-controlled power, and housekeeping load switches. When designing with this part, place the 100 nF VDD bypass capacitor within 2 mm of the IC and keep the gate-drive loop area below 0.5 cm to control ringing. The dual inverting topology requires non-overlap timing to be enforced by the controller; the 2EDN7533R itself does not include built-in dead-time generation.
2EDN7534FXTMA1 - Dual 5A Low-Side Gate Driver DSO-8 | Infineon
The Infineon 2EDN7534FXTMA1 is a dual-channel low-side 5 A gate driver IC designed for high-speed switching of MOSFETs and wide-bandgap (WBG) power switches such as GaN and SiC devices, housed in an 8-pin PG-DSO package. It delivers 5 A peak source/sink output current with typical 19 ns propagation delay and active output voltage clamping to VDD, making it well-suited for telecom, server, and industrial SMPS applications. What is a gate driver IC? A gate driver is a power amplifier that accepts a low-current logic-level PWM signal from a microcontroller, FPGA, or dedicated controller IC and produces a high-current drive signal capable of rapidly charging and discharging the gate capacitance of a power MOSFET, IGBT, or WBG switch. Gate drivers sit between the control domain (digital logic) and the power domain (switching transistors), enabling clean, fast switching transitions that minimize switching losses and reduce dead time. As a low-side driver, the 2EDN7534F controls the source-referenced switch in a half-bridge or low-side power stage. Key differentiating features of the 2EDN7534F include independent dual channels for parallel or synchronous drive, an enable input for sequenced startup, LV-TTL compatible logic inputs that tolerate -12 V to +22 V, and an absolute maximum supply of 20 V. Its active output clamping structure prevents gate voltage overshoot, which is critical when driving GaN HEMTs sensitive to Vgs transients. Tight matched-channel timing (typically <1 ns channel-to-channel skew) supports precision synchronous rectification. Architecturally, the device uses a complementary CMOS output stage with integrated bootstrap-style pull-up/pull-down devices sized for nanosecond-class rise/fall times. The 19 ns typical propagation delay and sub-nanosecond jitter preserve PWM edge fidelity in high-frequency designs up to several MHz. Built-in under-voltage lockout (UVLO) protects against insufficient gate-drive voltage during power-up and brown-out conditions. Typical applications include telecom 48 V bus converters, server and datacom point-of-load stages, synchronous buck and forward converter low-side switches, Class-D audio amplifier output stages, and motor drive low-side FETs in industrial automation. Designers favor this part where multiple parallel low-side MOSFETs require matched, high-current drive. When designing with the 2EDN7534F, keep the gate-drive loop (driver output to gate to source back to driver ground) as short and wide as possible to minimize parasitic inductance that can otherwise cause ringing and EMI. Place the VDD bypass capacitor directly at the IC supply pin with a 100 nF ceramic in parallel with a 1 µF bulk capacitor. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
The Infineon 2EDN7534RXTMA1 is a dual-channel low-side gate driver IC delivering up to 5 A peak source/sink current per channel in a compact PG-TSSOP-8 package. It features low on-resistance output stages and excellent timing accuracy for driving power MOSFETs, IGBTs, and especially wide-bandgap (WBG) devices such as GaN HEMTs and SiC MOSFETs that demand fast, clean gate edges. The device is part of Infineon's EiceDRIVER 2EDN family and is specified for operation from 4.5 V to 20 V supply voltage. A low-side gate driver is a critical signal-level interface that translates a 3.3 V or 5 V PWM logic command from a microcontroller or DSP into a high-current, low-impedance drive waveform suitable for the gate of a power transistor. By providing high peak gate current (5 A in this case), the driver enables fast switching transitions, which directly reduces switching losses in the power device and allows higher-frequency operation. Gate drivers sit in the signal chain hierarchy as: gate driver IC -> power MOSFET/IGBT driver -> switch-mode power supply (SMPS) -> power conversion system, making them indispensable in every modern switching power topology. Key features of the 2EDN7534RXTMA1 include 19 ns typical propagation delay with tight channel-to-channel matching, two independent non-inverting driver channels with TTL-compatible inputs, and -12 V to +22 V absolute maximum input voltage tolerance. The low output resistance (typically <1 ohm) minimizes gate-drive losses, while the internal active clamping protects against voltage transients when driving WBG devices with their inherently fast switching edges. The device also features under-voltage lockout (UVLO) for safe startup and low quiescent current draw when disabled. Typical applications include driving GaN HEMTs in 48 V telecom and server DC-DC converters, SiC MOSFET gate drives in EV traction inverters and on-board chargers, low-side MOSFET drives in synchronous buck and half-bridge converters, and class-D audio amplifier output stages. The dual-channel architecture makes it well-suited for synchronous rectification where two low-side FETs must switch in complementary fashion. When designing with the 2EDN7534RXTMA1, keep the gate-drive loop area as small as possible - use a Kelvin connection to the source/emitter and place the driver within 2-3 cm of the power device. Use a 1 uF ceramic bypass capacitor close to VCC and a 4.7-10 uF bulk capacitor on the driver supply rail. The 2EDN7534RXTMA1 is a drop-in pin-compatible member of the 2EDN family - alternative MPNs exist for higher voltage rails and different channel counts within the same package outline. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB layout guidance not consolidated on the manufacturer product page.
2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon
The Infineon 2EDN8533RXTMA1 is a dual-channel low-side gate driver IC delivering 5 A peak source/sink current in a PG-TSSOP-8 package with an exposed thermal pad. It is part of Infineon's EiceDRIVER 2EDN family and is specified for driving power MOSFETs, IGBTs, and GaN switches in switching power applications where compact footprint and fast switching transitions are critical. Two independent channels in one package enable half-bridge drive with external bootstrap, synchronous buck high-side drive, or dual low-side drive topologies. A low-side gate driver IC is an integrated circuit that sits between a low-voltage logic-level control signal (typically 3.3 V PWM from a microcontroller or PWM controller) and the gate of a power switching transistor (MOSFET, IGBT, or GaN HEMT). Its role is to translate the weak control signal into a strong, high-peak-current drive that can rapidly charge and discharge the transistor's gate capacitance, minimising switching losses and dead-time. In the broader power-management hierarchy, a gate driver sits between a PWM controller IC (e.g., a buck or LLC controller) and the power stage, and is itself a category of power MOSFET driver under PMIC functions. Key features of the 2EDN8533RXTMA1 include 5 A peak source/sink output current per channel, low output resistance for fast switching edges, excellent timing accuracy with tightly matched propagation delays between channels, and TTL-compatible inputs that can withstand absolute maximum voltages from -12 V to +22 V. The device operates over a wide VCC range and includes under-voltage lockout (UVLO) protection on the supply rail to prevent the driven transistor from operating in its linear region during low-VCC conditions, which would otherwise cause dangerous shoot-through or excessive dissipation. The 2EDN8533RXTMA1 uses a matched-die dual-channel architecture in a small 8-pin PG-TSSOP package with an exposed pad that provides both a low-impedance ground return and a thermal path for sustained switching current. Each channel can drive MOSFETs in several-hundred-kHz to low-MHz switching applications, making the IC suitable for high-density DC-DC converters and synchronous rectification stages. The wide input-voltage tolerance simplifies interface to 3.3 V or 5 V logic without external level shifters or protection Zener diodes. Typical applications include DC-DC buck and boost converter power stages, synchronous rectifier drivers, half-bridge and full-bridge driver stages when paired with a high-side bootstrap driver, motor drive low-side gate stages, Class-D audio amplifier output stages, and telecom/server point-of-load converters. The PG-TSSOP-8 footprint keeps the driver close to the power transistors, minimising parasitic loop inductance that would otherwise slow switching edges and cause ringing or voltage overshoot. When designing with the 2EDN8533RXTMA1, place input and bypass capacitors as close to VCC and GND pins as possible and connect the exposed pad to a solid ground plane to minimise parasitic inductance. The wide input tolerance allows direct connection to 3.3 V or 5 V logic, but designers should still respect absolute maximum ratings. For half-bridge work, the device is typically paired with a high-side bootstrap driver such as Infineon's 2ED2106S06J or the IR2110 family to complete a complete bridge drive solution. This page synthesises distributor pricing, drop-in alternative listings, and practical PCB layout notes that go beyond the manufacturer datasheet - giving a working engineer one consolidated source for sourcing, second-source qualification, and design-in guidance.
2EDN8534FXTMA1 - 5A Dual Low-Side Gate Driver | Infineon
The Infineon 2EDN8534FXTMA1 is a dual-channel 5 A low-side gate driver IC for MOSFETs and wide-bandgap (WBG) switches, featuring 19 ns propagation delay and active output voltage clamping, housed in an 8-pin PG-DSO-8 (DSO-8) package. The IC provides two independent non-inverting driver channels capable of sinking and sourcing 5 A peak gate current, enabling fast switching of power MOSFETs, GaN HEMTs, and SiC devices in switching-converter and motor-drive applications. A gate driver is a power-management IC that sits between a low-current control stage (microcontroller, FPGA, isolator) and the gate of a power transistor. Because the gate of a power MOSFET effectively appears as a large nonlinear capacitor (often several nF), the driver must supply and remove charge quickly to achieve low switching loss. Low-side drivers reference the source/emitter of the switch to the system ground and only need to swing the gate between ground and the gate-drive supply, making them the simplest, lowest-cost gate-drive topology. Within the broader taxonomy, the 2EDN8534 belongs to gate driver ICs, which sit under power management ICs and are essential building blocks of every switched-mode power supply, motor drive, and Class-D amplifier. The "EiceDRIVER" brand denotes Infineon's gate-driver product family. Key features include 4.5 V to 20 V supply voltage range, 5 A peak source/sink output current, 19 ns typical propagation delay, 1 ns channel-to-channel delay matching, and a Miller-clamp transistor for active gate-voltage clamping. The non-inverting inputs are LV-TTL compatible and tolerate absolute maximum input voltages from -12 V to +22 V, simplifying interface with microcontroller GPIO and digital isolators. Internal under-voltage lockout (UVLO) protects the power stage from insufficient gate drive. The DSO-8 package offers a thermal-resistance performance adequate for continuous switching at moderate frequencies. The EiceDRIVER 2EDN family uses a matched dual-channel architecture that minimizes timing skew between channels, critical for synchronous rectifiers and half-bridge low-side drive where channel mismatch would cause body-diode conduction losses. Compared to discrete push-pull driver pairs, the 2EDN8534F provides tighter delay matching, lower quiescent current, and integrated active Miller clamping that prevents parasitic turn-on of the complementary device in half-bridge topologies. Typical applications include DC-DC converter synchronous rectification, telecom brick and POL converter gate drive, Class-D audio amplifier output stage drive, motor-driver low-side drive, and industrial SMPS. The wide input-voltage tolerance and active Miller clamp make it especially well suited to high-frequency, hard-switched converters using GaN or SiC devices. When designing with this device, place input and output bypass capacitors as close as possible to the IC and keep gate-drive loops small to minimize parasitic inductance. The 5 A peak drive capability enables switching of large power MOSFETs at high dV/dt, so PCB layout must control ground bounce and avoid noise coupling back into the input pins. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
2EDR7259XXUMA1 - 5A/9A Isolated Gate Driver 5700Vrms | Infineon
The Infineon 2EDR7259XXUMA1 is an isolated dual-channel gate driver with 5 A typical source and 9 A peak sink drive current, 5700 Vrms galvanic isolation, and 150 V/ns common-mode transient immunity (CMTI) in a PG-DSO-14 narrow-body package. It is engineered for driving the high-side and low-side MOSFETs or IGBTs of half-bridge and full-bridge power stages in switched-mode power supplies (SMPS), motor drives, and industrial inverter blocks where reinforced isolation between the low-voltage control domain and the high-voltage power domain is mandatory. Key features include 38 ns typical propagation delay with tight channel-to-channel matching, integrated undervoltage lockout (UVLO) for both driver rails, and functional isolation reinforcement per IEC 60747-17/VDE 0884-11. The device is part of Infineon's EiceDRIVER 2EDR family of magnetically coupled gate drivers, which use an on-chip coreless transformer to transmit gate-drive pulses across the isolation barrier, replacing legacy opto-isolated gate driver solutions with higher CMTI, lower propagation delay skew, and better long-term reliability. The 2EDR7259XXUMA1's 150 V/ns CMTI rating means it can reject extremely fast dv/dt transients on the switched node without injecting false trigger pulses into the gate, a critical requirement for hard-switched GaN and SiC half-bridges. The two output channels are independently UVLO-protected, allowing asymmetric high-side and low-side supply voltages if the application requires it. The PG-DSO-14 package supports >8 mm creepage/clearance for reinforced isolation and is rated for industrial -40 °C to +125 °C ambient operation. Typical applications include isolated DC-DC converters, isolated gate-drive stages for traction inverters, industrial servo drives, photovoltaic string inverters, and welding power supplies. The 5 A source / 9 A sink asymmetry is well-matched to driving large MOSFETs or small IGBTs where the Miller plateau charging current (source) is moderate but the turn-off current (sink) needs to be high to prevent dv/dt-induced re-turn-on. When designing with this device, plan for a bootstrap or isolated DC-DC supply on the high-side channel, and follow Infineon's PCB layout guidelines for the gate-drive loop to minimize parasitic inductance. The magnetic isolation topology means the device does not require an isolated logic supply on the low-voltage side, only a single 3.3 V or 5 V VCC rail. This page synthesizes distributor pricing, drop-in and same-family alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
2EDR8258XXUMA1 - 5A/9A Isolated Gate Driver, 5.7kV | Infineon
The Infineon 2EDR8258XXUMA1 is a 5 A source / 9 A sink reinforced isolated single-channel gate driver with 5.7 kVrms galvanic isolation, housed in a 14-pin PG-DSO package with 150 V/ns common-mode transient immunity (CMTI) and 38 ns typical propagation delay. It uses Infineon's coreless transformer (CT) isolation technology to drive the gates of IGBTs, MOSFETs, and SiC power switches in half-bridge and high-side/low-side topologies. An isolated gate driver is a semiconductor device that provides both level shifting and galvanic isolation between a low-voltage control circuit (such as a microcontroller or PWM controller) and the gate of a high-voltage power transistor. Isolated gate drivers belong to the broader category of gate drivers, which in turn sit within power management ICs and isolated interface ICs. The isolation barrier protects low-voltage logic from hazardous high-voltage transients and allows the gate driver to float at the source potential of the high-side switch in a half-bridge, eliminating the need for bootstrap or charge-pump level shifters. Key features include a wide driver supply range of 8 V to 20 V, undervoltage lockout (UVLO) for both VCC and VBS rails, integrated dead-time control to prevent shoot-through, short-circuit protection via DESAT, and an enable/shutdown pin for safe sequencing. The 5 A source and 9 A sink asymmetric drive strength is optimized to supply the large initial gate charge needed to switch wide-bandgap power devices rapidly while holding the on-state gate voltage firmly to prevent parasitic turn-on. The 38 ns propagation delay and tight part-to-part matching minimize dead-time loss in high-frequency converter designs. The device is built on Infineon's high-voltage BCD process and uses a planar micro-transformer for the isolation channel, achieving >100 kV/µs CMTI and 5.7 kVrms continuous isolation per IEC 60747-17. Internal logic provides non-inverting inputs, interlocking to prevent both outputs being high, and a programmable fault clear time. The PG-DSO-14 package has an exposed pad that ties to the IC substrate and must be soldered to a grounded copper island for thermal dissipation and to maintain the rated creepage/clearance. Typical applications include industrial SMPS, solar string inverters, UPS systems, EV onboard chargers, and motor drives where reinforced isolation is required by safety standards such as IEC 61800-5-1. The high CMTI and short propagation delay make it especially suitable for driving SiC MOSFETs in 100 kHz+ converters and for IGBT modules in three-phase inverter stages. When designing with this part, place a 1 µF X7R bypass capacitor as close as possible to VCC and VBS pins and use a 4.7 µF to 10 µF bulk capacitor on the secondary-side driver supply. The exposed pad must be soldered to a sufficient copper area (>=25 mm² on a 4-layer PCB) to stay within thermal limits. Maintain at least 8 mm creepage on the PCB surface between primary and secondary sides to preserve the reinforced isolation rating. This page synthesizes distributor pricing, drop-in alternatives from the Infineon EiceDRIVER family and pin-compatible equivalents, and practical design notes not found in the manufacturer datasheet.
2EP100RXTMA1 - 5W 20V Full-Bridge Transformer Driver | Infineon
The Infineon 2EP100RXTMA1 is a 5 W, 20 V full-bridge transformer driver IC in a PG-TSSOP-8 package, optimized for asymmetric gate driver supply generation in isolated gate driver topologies. It integrates four switches that form a full bridge driving an external center-tapped transformer, providing bipolar isolated supplies for IGBT, MOSFET, SiC, and GaN gate drivers. According to the Infineon product page, the device is designed as a compact, single-chip alternative to discrete push-pull or half-bridge transformer driver implementations. A transformer driver IC is a specialized power management semiconductor that switches an external transformer at high frequency to generate isolated DC rails. Transformer drivers sit in the power management IC hierarchy (transformer driver -> isolated bias supply -> gate driver supply -> power management IC -> semiconductor) and are commonly used in conjunction with galvanic isolation components such as digital isolators and gate driver optocouplers. Key features of the 2EP100RXTMA1 include a wide supply range supporting typical 5 V to 20 V inputs, integrated full-bridge switches that drive the external transformer primary, programmable switching frequency set by an external resistor or synchronization input, and built-in soft-start to limit inrush current at power-up. The device provides configurable dead time to prevent shoot-through, and offers enable/shutdown control for low quiescent current standby. The PG-TSSOP-8 package reduces board space compared with discrete driver implementations and supports reflow soldering. Architecturally, the 2EP100RXTMA1 uses four internal MOSFET switches arranged as an H-bridge, switching the transformer primary at programmable frequency. The on-chip oscillator and dead-time control generate complementary gate timing, while the integrated bootstrap-style high-side drive is implemented using external capacitors at each high-side terminal. Built-in protection includes undervoltage lockout (UVLO), thermal shutdown, and short-circuit current limiting on the primary winding. Typical applications include isolated gate driver supplies for industrial motor drives, isolated bias for traction inverters in xEV, telecom DC-DC converters using a push-pull topology, solar inverters, and server/telecom isolated bus converters. The 5 W output capability is well-matched to driving four to eight gate drivers simultaneously. Designers should note that the 2EP100RXTMA1 drives only the primary; the transformer secondary rectification, filtering, and post-regulation must be implemented externally. Proper PCB layout of the primary loop and careful selection of the bootstrap capacitor are essential for reliable high-side switching. Synchronizing to an external clock helps avoid beat-frequency noise in multi-rail systems. This page consolidates distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet to accelerate your design-in of the 2EP100RXTMA1.
2EP101RXTMA1 - 5W Full-Bridge Transformer Driver IC | Infineon
The Infineon 2EP101RXTMA1 is a 5 W, 20 V full-bridge transformer driver PMIC housed in a PG-TSSOP-8 industrial package, designed as an isolated bias supply for IGBT and SiC MOSFET gate drivers. The device integrates four MOSFET switches in an H-bridge configuration that drives a small center-tapped transformer at a selectable switching frequency of 50 kHz or 65 kHz with a programmable duty cycle of 12% or 17%, generating the bipolar isolated rails required by high-side gate driver circuits. The bare die ships on a tape-and-reel carrier (XT suffix), making it suitable for high-volume surface-mount assembly. A transformer driver is a specialized PMIC category that uses switching action on the primary side of an isolation transformer to produce an isolated, regulated low-voltage rail on the secondary side. In the broader power management taxonomy, the 2EP101RXTMA1 sits below discrete gate driver ICs and above simple DC-DC flyback controllers, filling the niche of compact isolated bias generation for gate drive stages. Because IGBT and SiC gate drive supplies must float with the switching node, galvanic isolation is mandatory, and the 2EP101RXTMA1 provides this through an external low-cost transformer rather than a digital isolator. The 2EP101RXTMA1 delivers up to 5 W of output power from a 5 V to 20 V supply, supports a wide operating temperature range of -40 °C to +125 °C, and consumes a typical quiescent current in the microamp range to preserve system efficiency. Its adjustable frequency/duty combination allows the designer to trade off transformer size against EMI signature, and internal shoot-through protection prevents cross-conduction of the H-bridge during switching transitions. The TSSOP-8 footprint and minimal external BOM (one transformer, a few ceramic capacitors, two rectifier diodes) make it a compact alternative to discrete flyback or push-pull bias circuits. Architecture-wise, the part is a monolithic CMOS controller plus four integrated N-channel power MOSFETs forming a self-oscillating or externally-clocked full bridge. Its primary differentiation versus other gate-bias approaches (such as bootstrap capacitors or integrated digital isolators) is that it delivers continuous bipolar isolated power, enabling reliable negative gate drive bias that prevents parasitic turn-on of SiC MOSFETs in half-bridge topologies. Typical applications include isolated gate driver supplies for industrial motor drives, photovoltaic inverters, uninterruptible power supplies, EV traction inverters, and SiC-based DC fast chargers. Any application that uses high-side IGBT or SiC switches in a half-bridge or three-phase inverter will benefit from its compact isolated bias solution. Designers should pay attention to transformer leakage inductance, snubber sizing across the H-bridge outputs, and PCB creepage/clearance when routing the primary-secondary boundary.
2EP110RXTMA1 - 5W Full-Bridge Transformer Driver | Infineon
The Infineon 2EP110RXTMA1 is a high-performance 5 W full-bridge transformer driver PMIC housed in a PG-TSSOP-8 package, designed to supply isolated gate-drive power for IGBT and SiC MOSFET half-bridge stages. Per the Infineon 2EP1xxR family datasheet, it supports a 20 V input rail and operates at fixed switching frequencies of 50 kHz and 65 kHz (frequency-selectable), with integrated MOSFET half-bridges that directly drive a small centre-tapped transformer. What is a transformer driver PMIC? A transformer driver PMIC is a power-management IC that generates an isolated, regulated voltage rail by switching a centre-tapped transformer at high frequency and rectifying the secondary winding. It sits in the signal chain between a low-voltage control supply (typically 5 V or 12 V) and a floating gate-driver supply, replacing discrete push-pull or Royer oscillators with a single regulated, oscillator-free IC. Within the broader taxonomy: transformer driver PMIC -> isolated gate-driver supply -> gate driver -> power management IC -> semiconductor. Key features of the 2EP110RXTMA1 include 5 W of output power, integrated full-bridge MOSFETs, internal soft-start, under-voltage lockout (UVLO), and over-temperature protection. The device accepts a single 20 V supply and produces a stable, transformer-isolated output suitable for biasing IGBT or SiC MOSFET gate drivers in industrial inverters, photovoltaic converters, and electric-vehicle traction stages. The architecture uses two internal half-bridges that drive the primary of an external centre-tapped transformer at a fixed 50/65 kHz frequency, selected by a logic pin. The secondary is rectified and filtered to produce an isolated rail. Compared with discrete Royer or push-pull oscillators, the 2EP110RXTMA1 reduces component count, eliminates the start-up resistor bias network, and provides a precisely controlled switching frequency that simplifies EMI filter design. Typical applications include isolated gate-driver supplies for IGBT modules, SiC MOSFET gate-drive bias rails in solar inverters, traction inverters in EV powertrains, and industrial motor drives. The 5 W output comfortably powers two to four gate-driver channels, and the small PG-TSSOP-8 footprint enables compact designs. When designing with this part, choose the transformer turns ratio and secondary rectifier to match the desired isolated rail voltage (commonly +15 V / -5 V or +18 V / -3 V for SiC). Place the input decoupling capacitor within 2 mm of the VCC pin and keep the transformer primary loop area minimal to control EMI. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
2EP130RXTMA1 - Full-Bridge Transformer Driver for SiC/IGBT | Infineon
The Infineon 2EP130RXTMA1 is a full-bridge transformer driver PMIC designed to provide isolated gate-driver supply rails for IGBT and SiC MOSFET power switches, housed in a compact 8-pin PG-TSSOP-8 (exposed pad) package. The device integrates two push-pull output channels that drive a small center-tapped transformer, generating a fully isolated bipolar or unipolar bias for high-side gate drivers. Its supply voltage range of 4.5 V to 20 V and switching frequency range of 50 kHz to 695 kHz make it broadly compatible with low-voltage bus systems including 12 V industrial and 15 V to 18 V battery-fed rails. A transformer driver is a specialized power-management IC that energizes a step-up transformer to produce an isolated DC rail, eliminating the need for opto-couplers or bootstrap circuits in gate-drive bias networks. The 2EP130RXTMA1 belongs to the gate-driver supply sub-category within the broader PMIC family, sitting hierarchically under PMIC > power management IC > semiconductor. It is specifically engineered for high-side gate drive biasing where galvanic isolation is mandated for safety and dv/dt noise immunity. Key features include adjustable duty cycle from 10 % to 50 %, 5 W typical output power into the transformer, soft-start for inrush control, under-voltage lockout (UVLO), short-circuit protection, over-current protection, and over-temperature shutdown. The PG-TSSOP-8 package with exposed thermal pad keeps junction rise modest even at 4.5 V operation, allowing continuous 5 W transfer without external heatsinking. The architecture is a true full-bridge (H-bridge) topology rather than a half-bridge push-pull, which doubles the peak primary voltage swing and enables smaller transformers or higher output power at the same frequency. Internal MOSFETs are synchronized to prevent cross-conduction, and dead-time control protects against shoot-through. According to the Infineon datasheet, the device supports external clock synchronization for paralleled or noise-critical applications. Typical applications include isolated gate-drive supplies for high-voltage IGBT modules in industrial motor drives, SiC MOSFET gate bias in EV traction inverters, photovoltaic string inverters, and isolated auxiliary supplies for telecom and server power-conversion stages. When compared with a discrete charge-pump approach, the 2EP130RXTMA1 delivers higher efficiency and lower EMI in the same PCB area. When designing with this part, the transformer turns ratio must be matched to the desired isolated output voltage, and primary inductance should be selected so that magnetizing current stays below 1 A peak. The exposed pad must be soldered to a copper pour of at least 50 mm² to meet thermal ratings under continuous 5 W operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
315 - SR716SW Silver Oxide 1.55V Watch Battery | Energizer
The Energizer 315 is a silver-oxide button cell battery rated at 1.55 V nominal, with a diameter of 7.9 mm and a height of 1.65 mm, conforming to the SR716SW IEC designation. Housed in a sealed stainless-steel coin cell, it delivers a stable discharge curve optimized for low-drain analog watch movements, including conventional 3-hand quartz and slim dress watches. Silver-oxide watch batteries (chemistry code SR) are primary non-rechargeable cells that use a zinc anode and silver-oxide cathode, with alkaline electrolyte. Compared with alkaline button cells (LR) or mercury cells (former H prefix), silver-oxide chemistry provides a flatter voltage plateau throughout the discharge cycle, which keeps the watch movement's step-motor drive amplitude constant and prevents the "end-of-life slowdown" that alkaline cells exhibit. The SR716SW family occupies the niche between the smaller SR621SW (6.8 mm) and the larger SR916SW (9.5 mm). Key features include 1.55 V nominal voltage, 7.9 mm × 1.65 mm dimensions (per IEC 60086), leak-resistant sealed construction, and an operating temperature window of 0 °C to +60 °C. Capacity is approximately 22 mAh (per Energizer watch-cell datasheets), with a typical continuous drain of 30 µA at 1.5 V end-point for analog quartz movements. Shelf life is rated up to 5 years at +20 °C storage. Common alias part numbers include SR716SW, SR67, SR716, V315, D315, B315L, 530, 280-56, SB-AT, 614, HA, and the IEC code SR67. All share identical dimensions and voltage; only capacity may vary slightly between brands due to cathode formulation differences. Typical applications include analog quartz wristwatches, small digital timepieces, calculator backup cells, glucometer RTC backup, and low-power CMOS logic RTC retention. The thin 1.65 mm profile makes it the standard cell for slim dress watches with case thickness under 5 mm. Avoid mixing silver-oxide and alkaline watch cells in the same device - their voltage profiles differ and may cause erratic stepping. Store unused cells in original blister packaging to preserve shelf life and prevent inadvertent short-circuit on metal surfaces. This page consolidates the manufacturer-published cell dimensions, the cross-reference equivalency map, and known drop-in equivalents across brands not found in a single manufacturer datasheet.
5962R0051601VPA - 5V Precision Voltage Reference | Analog Devices
The 5962R0051601VPA is a military-grade precision voltage reference from Analog Devices, providing a stable +5V output with an adjustable range of ±6% and minimal effect on temperature stability. It operates over an input voltage range of 7V to 40V, with a low current drain of 1mA, making it ideal for high-reliability systems. The device is packaged in a through-hole ceramic DIP (CDIP) and is qualified to MIL-PRF-38535 Class V, ensuring performance across the full military temperature range of -55°C to +125°C. A voltage reference is a precision electronic circuit that produces a constant output voltage regardless of load, input voltage, or temperature variations. It serves as a foundational building block in analog and mixed-signal systems, providing a stable reference for analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and comparators. Voltage references are categorized by their accuracy, temperature coefficient, and long-term stability, and are essential in applications requiring precise voltage regulation. Key features of the 5962R0051601VPA include a nominal output voltage of 5V with a tolerance of ±0.3%, a temperature coefficient of 8.5 ppm/°C maximum, and long-term drift guaranteed at 100 ppm/1000 hours maximum. The device supports single-supply operation from 7V to 40V, and its low quiescent current of 1mA minimizes power consumption. The output can be adjusted over a ±6% range using external resistors, allowing fine calibration without compromising temperature stability. Technically, the 5962R0051601VPA is based on a bandgap reference architecture, which provides a stable voltage derived from the bandgap of silicon. This design offers excellent temperature stability and low noise, making it suitable for precision analog circuits. The device is available in a hermetic ceramic package, ensuring reliability in harsh environments. Its military-grade screening ensures compliance with stringent quality and reliability standards. Typical applications include military avionics, aerospace systems, precision instrumentation, and industrial control systems where a stable and accurate voltage reference is critical. The device is also used in data acquisition systems, medical devices, and communication equipment that require high precision and reliability. When designing with this device, ensure adequate input voltage headroom (at least 2V above the output) and use proper decoupling capacitors on the input and output to maintain stability. The output adjustment pin allows trimming, but care must be taken to maintain the temperature coefficient. For best performance, use precision resistors with low temperature coefficients in the adjustment network.
6ED003L02F2XUMA1 - 200V 3-Phase Gate Driver IC, OCP, FAULT | Infineon
The Infineon 6ED003L02F2XUMA1 is a 200 V three-phase gate driver IC with integrated over-current protection, enable input, and fault reporting, housed in a 28-pin PG-TSSOP (Tape & Reel) package. It is built on Infineon's level-shift silicon-on-insulator (LS-SOI) process and is qualified to control 180 V-class IGBTs and power MOSFETs in three-phase half-bridge topologies. Per the verified distributor descriptions, the device is specified at 200 V blocking capability, 0.375 A typical source/sink gate-drive current, and integrates a full three-phase high-side/low-side driver array in a single monolithic IC. A three-phase gate driver IC is a power-management semiconductor that translates low-voltage logic PWM commands from a microcontroller into six high-current gate-drive signals (three high-side, three low-side) suitable for switching the six power switches of a three-phase inverter. It belongs to the gate driver family within power management ICs, sitting between the digital control domain and the high-voltage power stage in motor drives, uninterruptible power supplies (UPS), and solar inverters. The 6ED003L02F2XUMA1's integrated over-current protection, fault output, and bootstrap-compatible design reduce external component count versus discrete opto-isolated or transformer-driven solutions. Key features include a 0.375 A typ. gate-drive current (per distributor snippets), 200 V high-side bootstrap operation, integrated OCP comparator with fault output, and an enable pin for hardware shutdown. The PG-TSSOP-28 footprint supports compact PCB layouts typical of small-format motor drives, fan controllers, and appliance inverters. Per the Infineon product page, the LS-SOI level-shift technology delivers robust negative transient immunity on the high-side switches, a known failure mode for motor-drive inverters with fast dV/dt switching nodes. Typical applications include 110/220 V-class three-phase motor drives (PMSM, BLDC, induction), small industrial servo drives, solar micro-inverters, and appliance motor control (washing machines, fans, pumps). The integrated OCP comparator interfaces directly with a current-sense shunt or Hall-effect sensor, allowing the MCU to react to short-circuit events within microseconds rather than milliseconds. Design considerations include bootstrap capacitor sizing per phase (typically 1 uF X7R rated for >250 V), a low-ESR VCC decoupling capacitor (10 uF + 100 nF), and gate-drive resistors of 10-33 ohm to balance EMI and switching loss.
6EDL04I065NRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon
The Infineon 6EDL04I065NRXUMA1 is a 650 V three-phase gate driver IC with integrated bootstrap diodes, designed to control six power MOSFETs or IGBTs in 3-phase inverter stages. It belongs to the 6EDL04x065xR family, delivers 6 driver channels in a non-inverting configuration, and is housed in a 25-pin PG-TSSOP package. Key features include a maximum blocking voltage of +650 V, integrated Over Current Protection (OCP), an Enable (EN) input for hardware shutdown, a Fault output flag, and built-in bootstrap diodes (BSD) that eliminate external discrete diodes for the high-side supply. The device is built on Infineon's thin-film Silicon-on-Insulator (SOI) process, providing integrated level shifters with robust negative transient immunity on the high-side floating rails. Typical applications include 3-phase motor drives for HVAC fans, pumps, and compressors, as well as low-power general-purpose inverters where a 650 V blocking rating and integrated bootstrap simplify the BOM. The OCP and Fault pin provide the hardware protection interface required for industrial drive safety architectures. When designing with this part, choose the bootstrap capacitor value to maintain the high-side supply above the UVLO threshold during the minimum PWM on-time. Place the three bootstrap capacitors as close to the BSTx pins as possible to minimize parasitic inductance on the floating supply rails.
6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon
The Infineon 6EDL04I065PRXUMA1 is a 650 V three-phase gate driver IC with integrated bootstrap diodes, designed to drive six IGBTs or MOSFETs in a three-phase inverter half-bridge topology. Housed in a PG-TSSOP-25 package, it provides non-inverting logic inputs, per-phase under-voltage lockout (UVLO), over-current protection (OCP), and a fault output for safe inverter operation. The device supports up to 0.24 A source / 0.5 A sink gate-drive current for fast switching transitions and is targeted at motor-drive and power-conversion applications. A three-phase gate driver IC is a specialized power-management semiconductor that sits between a low-voltage microcontroller / DSP and the high-voltage power switches (IGBTs or MOSFETs) in a three-phase inverter. It performs logic-level translation, level shifting across the high-side bootstrap isolation barrier, and provides robust gate drive with short propagation delays. The hierarchical taxonomy is: gate driver IC -> driver/interface IC -> power management semiconductor -> discrete semiconductor. The 6EDL family belongs to Infineon's EiceDRIVER compact three-phase driver family, which simplifies inverter designs by integrating the three high-side bootstrap diodes that would otherwise be discrete components. Key features include a wide logic supply range of 3.3 V to 5 V for direct MCU interface, 650 V blocking voltage suitable for 230 V AC / 400 V rectified-bus systems, integrated bootstrap diodes for all three high-side drivers, dedicated FAULT output and per-phase enable/shutdown control, plus OCP input that can be tied to a shunt or DESAT network. The TSSOP-25 footprint is compact for power-driver ICs, allowing small PCB real estate in motor control modules. Operating junction temperature is rated from -40 C to +125 C, with built-in thermal shutdown. The architecture uses a level-shifted high-side channel with bootstrap supply, ensuring 100% duty-cycle capability on the high side. The integrated bootstrap diodes reduce BOM count and PCB area, and the matched propagation delays across the three phases minimize current distortion in field-oriented control (FOC) loops. Per-channel UVLO prevents the power switches from operating in their linear region, which is critical for efficiency and reliability. Typical applications include three-phase motor drives for HVAC compressors, refrigerator compressors, washing-machine pumps, industrial fans and pumps, e-bike and small-EV traction inverters, and uninterruptible power supplies (UPS) up to the 400 V class. The compact form factor also makes it suitable for appliance inverter boards where PCB area is constrained. When designing with the 6EDL04I065PRXUMA1, the bootstrap capacitor value must be sized to supply gate charge during the high-side on-time without dropping below UVLO; a 1 uF to 4.7 uF ceramic is a common starting point. PCB layout should keep the low-side return loop compact, and the OCP filter RC should be placed close to the OCP pin to avoid false tripping in noisy switching environments. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet - giving an engineer a faster path from datasheet to working inverter prototype.
6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon
The Infineon 6EDL04N02PRXUMA1 is a 200 V three-phase gate driver IC with integrated bootstrap diodes, over-current protection, enable input, and fault reporting, housed in a 28-pin TSSOP (PG-TSSOP-28) package. It uses Infineon's thin-film Silicon-On-Insulator (SOI) level-shifter technology to drive six discrete power MOSFETs or 180 V IGBTs in a 3-phase inverter bridge, delivering up to 0.375 A source and 0.75 A sink gate drive current per channel with a maximum blocking voltage of +180 V. A gate driver IC is a specialized power management semiconductor that sits between a low-power microcontroller/MCU and a high-power switching transistor stage, translating 3.3 V or 5 V logic-level PWM signals into high-current gate drive signals capable of rapidly switching MOSFETs or IGBTs. Gate drivers belong to the broader hierarchy of power management ICs, then PMIC > driver > half/full/three-phase gate driver, and are critical building blocks in motor drives, solar inverters, and switched-mode power supplies. Key features of the 6EDL04N02PRXUMA1 include integrated bootstrap diodes (BSD) for the three high-side drivers - eliminating the need for external bootstrap diodes and reducing BOM cost and PCB area - plus a dedicated fault output pin (nFAULT) that signals desaturation/over-current events to the host MCU. Each phase pair includes hardware interlocking to prevent shoot-through cross-conduction, and a single EN pin enables clean start-up sequencing. CMOS/LSTTL-compatible inputs accept 3.3 V logic directly, simplifying interface to modern MCUs. The device is built on Infineon's proprietary thin-film SOI process, which provides excellent negative VS transient immunity (a critical spec for high-side switching in motor drives), latch-up immunity, and low power dissipation. The maximum junction temperature is +150 °C and the operating supply range is 10 V to 20 V VCC, with a separate logic-level supply on VBS for each high side. Typical applications include 3-phase brushless DC (BLDC) motor drives for home appliances and HVAC fans, low-voltage (24 V to 96 V) industrial servo drives, e-bike and e-scooter traction inverters, and small solar/string inverter stages. The integrated bootstrap diode simplifies PCB layout and improves long-term reliability by reducing the part count. When designing with this driver, ensure the VCC decoupling is sized for the total gate charge of all six switches switched simultaneously, and keep the bootstrap capacitor loop area minimal. The over-current protection uses a single shunt resistor on the low-side return path; place the RC filter on the ITRIP/CIN pin within 10 mm of the IC to avoid false tripping. This page synthesizes distributor pricing across six sources, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
6EDL04N03PRXUMA1 - 3-Phase Gate Driver, 25V/0.24A | Infineon
The Infineon 6EDL04N03PRXUMA1 is a 200 V/600 V three-phase gate driver IC with integrated bootstrap diodes, over-current protection (OCP), fault output, and enable (EN) function, supplied in a 25-pin PG-TSSOP package. It delivers 0.24 A source/0.375 A sink gate-drive current per channel and operates from a supply range of 10 V to 25 V (VDD) with logic input levels referenced to 3.3 V/5 V VSS. A three-phase gate driver is a specialized power-management IC that controls the six switching transistors (three high-side + three low-side) of a 3-phase inverter used in motor drives and DC/AC converters. Within the broader semiconductor hierarchy, this device is a sub-category of gate drivers, which in turn belong to the power management IC family. By integrating six half-bridge channels, three bootstrap diodes, and protection logic in a single package, the 6EDL04N03PRXUMA1 replaces a discrete driver + bootstrap-diode + comparator solution, reducing PCB area and BOM count. Key differentiating features include a 60 ns typical rise time and 26 ns typical fall time at 1 nF load, integrated charge-pump-less bootstrap with low-ohmic current-limiting resistors for fast recharge at small duty cycles, over-current shutdown with adjustable threshold, an EN pin for hardware interlocking, and an open-drain FAULT output for diagnostic feedback to the MCU. The device also provides built-in dead-time generation and shoot-through protection, eliminating the risk of cross-conduction in the driven half-bridge. The 6EDL04N03PRXUMA1 is built on Infineon's high-voltage SOI (silicon-on-insulator) gate-driver process, which provides excellent negative transient immunity on the VS node (-VS transient robustness) and allows operation in harsh motor-drive environments. Logic inputs are 3.3 V/5 V VSS-compliant, eliminating the need for external level shifters when interfaced with low-voltage MCUs. Typical applications include BLDC and PMSM motor drives for home appliances, ceiling fans, pumps, and HVAC blowers, as well as 3-phase solar inverters, industrial servo drives, and e-bike/e-scooter traction controllers. The integrated OCP and EN/FAULT pins also suit safety-critical designs requiring functional shutdown on detection of short-circuit or over-temperature events. When designing with this part, pay close attention to the bootstrap capacitor selection and to PCB layout of the VS floating supply traces to prevent ground bounce. A low-ESR ceramic or tantalum capacitor (1 uF to 4.7 uF) on each CBOOT node is recommended, with the high-side gate-drive loop kept as short as possible. This page synthesizes distributor pricing, drop-in alternatives from the same Infineon 6ED family, and practical design notes not aggregated on the manufacturer datasheet landing page.