Tiristores e TRIACs
Produtos (14)
5SGA06C2501 - 2500V Asymmetric GTO Thyristor | ABB
The ABB 5SGA06C2501 is an asymmetric gate turn-off (GTO) thyristor rated at 2500 V off-state voltage and 600 A average on-state current, packaged in an industry-standard press-pack (hockey puck) disc housing. It is a member of ABB's 5SGA GTO family designed for high-voltage, high-current traction, industrial drives, and HVDC converter applications where forced commutation via the gate is required. A GTO (Gate Turn-Off) thyristor is a four-layer PNPN semiconductor device capable of being switched both ON and OFF by a gate control signal, unlike a conventional SCR which only latches on. The 'asymmetric' designation means the reverse blocking capability is intentionally limited (typically a few hundred volts) because GTOs are normally used with an anti-parallel diode, allowing the device to be optimized for low on-state voltage drop and fast turn-off in forward-conduction applications. GTOs sit within the thyristor hierarchy (thyristor -> power semiconductor -> discrete semiconductor) and remain relevant where very high surge currents and short-circuit withstand are required. Key specifications include a repetitive peak off-state voltage (VDRM) of 2500 V, an RMS on-state current (IT(RMS)) up to 940 A, a typical on-state voltage of 3.2 V at the rated current, and a turn-off time in the order of 20-25 µs. The disc package supports double-sided cooling via matched heatsink clamps, enabling symmetrical thermal performance and straightforward series stacking for higher voltage converters. Integrated gate and cathode auxiliary connections simplify the snubber, gate-drive, and protection network layout. Typical applications include three-level NPC traction inverters for rail propulsion, large AC drives for rolling mills and mine hoists, static VAR compensators (SVC) and HVDC valve groups, soft-starters for very large motors, and pulse-power supplies. Designers select the 5SGA06C2501 when an established, field-proven GTO platform is required, when the system voltage exceeds 2000 V series stacking, or when replacement of an aging press-pack device must fit the existing heatsink and clamping hardware. Design consideration: the GTO requires a sizable RC snubber across the device and a well-defined dv/dt and di/dt limit at turn-off; a clamp circuit with MOV or RCD plus a low-impedance gate-cathode return is essential for reliable commutation. Mounting torque, heatsink flatness, and double-sided clamping pressure must follow the manufacturer guideline to achieve the published thermal resistance and to avoid contact wear. This page synthesizes distributor availability, drop-in alternatives, and practical design notes for the 5SGA06C2501 that are not consolidated in the manufacturer datasheet alone.
BT134-600D,127 - 600V 4A Logic-Level TRIAC SOT-82 | WeEn
The WeEn Semiconductors BT134-600D,127 is a planar passivated, very sensitive gate, four-quadrant logic-level TRIAC rated at 600 V off-state (VDRM) and 4 A RMS on-state current (IT(RMS)), housed in a through-hole SOT-82 (SOT-82-3 / TO-126 variant) plastic package with three leads. Designed for direct logic-interface triggering, it features a maximum gate trigger voltage VGT of 1.5 V at 10 mA IGT, enabling direct drive from microcontrollers, optocouplers, and low-voltage logic outputs without external driver stages. A TRIAC (TRIode for Alternating Current) is a bidirectional semiconductor switch belonging to the thyristor family. Internally equivalent to two back-to-back SCRs with a shared gate, a TRIAC conducts in both halves of the AC waveform once triggered, making it the workhorse device for low-to-medium-power AC load control. Within the broader semiconductor taxonomy, the TRIAC sits as a sub-category of thyristors, which are themselves members of the power-management discrete-semiconductor family used wherever AC mains must be switched or phase-controlled. The BT134 series targets sub-10 A applications where sensitive-gate triggering simplifies interface design. Key specifications include 4 A continuous RMS on-state current, 27 A non-repetitive surge current (ITSM) for half-cycle transients, 600 V repetitive peak off-state voltage, 1.5 V maximum gate trigger voltage, 10 mA maximum gate trigger current, and 5 W maximum power dissipation. The planar passivated glass junction construction provides long-term stability and high dv/dt immunity, while the SOT-82 through-hole package offers robust mechanical mounting suitable for PCB designs and clip-mount heatsinks in appliance and industrial control environments. Typical applications include low-power AC lamp dimmers, fan motor speed controllers, solenoid drivers, and small appliance heater controls. The logic-level gate sensitivity allows direct microcontroller interfacing in solid-state relay (SSR) input stages, eliminating the need for gate-driver transistors or pulse transformers. Its four-quadrant triggering capability ensures reliable operation in phase-control circuits regardless of load polarity or trigger mode (I, II, III, IV). A primary design consideration is thermal management: at full 4 A RMS conduction, total power dissipation reaches approximately 5 W, requiring the SOT-82 tab to be soldered to a minimum 50 mm x 50 mm copper land or a clip-on heatsink to maintain junction temperature below 125 degrees C. A snubber RC network (typically 100 ohm + 100 nF) across MT1-MT2 is recommended for inductive loads to prevent false triggering from dv/dt transients. This page synthesizes distributor pricing, SOT-82 drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
BT136-600D,127 - 4A 600V Sensitive Gate TRIAC | WeEn Semiconductors
The WeEn Semiconductors BT136-600D,127 is a planar passivated four-quadrant sensitive-gate TRIAC rated at 600 V blocking voltage (VDRM) and 4 A RMS on-state current (IT(RMS)), housed in a 3-pin TO-220AB through-hole package (SOT78 / SC-46). The "D" suffix denotes a very sensitive gate with 10 mA maximum gate trigger current (IGT) in all four quadrants, plus 1 V peak gate trigger voltage (VGT) and 5 W power dissipation, making it ideal for low-power logic-level control of AC loads. A TRIAC (triode for alternating current) is a bidirectional thyristor that conducts in both halves of an AC waveform, effectively functioning as two SCRs wired in anti-parallel within a single die. It belongs to the thyristor family within discrete power semiconductors, used wherever AC mains must be switched or phase-controlled by a low-power control signal. TRIACs sit in the hierarchy: thyristor -> discrete semiconductor -> power device. The four-quadrant symmetric gating of the "D" series enables the same low gate drive to fire the device in Quadrants I, II, III, and IV, simplifying MCU-driven phase-control and zero-cross switching designs. Key specifications include 600 V repetitive peak off-state voltage (VDRM), 4 A RMS on-state current (IT(RMS)), 25 A non-repetitive surge current (ITSM), 10 mA maximum gate trigger current (IGT), 1 V maximum gate trigger voltage (VGT), and 5 W power dissipation (PG(AV)). The TO-220AB package exposes a metal tab that doubles as the main terminal (MT2) and serves as a heatsink mounting interface. Planar passivated die construction yields stable blocking characteristics and long-term reliability under thermal cycling. Typical applications include AC lamp dimmers (leading-edge phase control), fan and small motor speed regulators, solid-state relays, heater control, and general-purpose AC switching in white goods. Logic-level IGT allows direct drive from microcontroller GPIO pins, eliminating the need for a dedicated gate driver circuit.
BTA16-600B - 16A 600V Standard TRIAC | STMicroelectronics
The STMicroelectronics BTA16-600B is a 16 A standard TRIAC rated at 600 V repetitive peak off-state voltage, supplied in an insulated TO-220AB (BTA) package for general-purpose AC power switching. As part of the ST BTA/BTB16 glass-passivated PNPN family, it is engineered for applications where high surge current capability is required. A TRIAC (triode for alternating current) is a three-terminal bidirectional thyristor that conducts current in both directions once triggered by a gate pulse, making it the foundational switching device of the thyristor family for AC phase control. In the power-control hierarchy, the TRIAC sits alongside the SCR and AC switch, enabling direct switching of AC mains loads with a single semiconductor rather than back-to-back SCRs. Key features include a 16 A RMS on-state current rating, 600 V blocking capability suitable for 230 VAC and 120 VAC mains, and the fully insulated TO-220AB package, which allows mounting directly to a grounded heatsink without an external isolation pad, improving thermal performance and safety. The glass-passivated die construction provides robust surge immunity. The BTA16-600B is a standard (not snubberless) TRIAC with a gate sensitivity class denoted by the B suffix. Designers trigger it via negative or positive gate current relative to A1 using optocouplers or direct drive circuits. Four-quadrant triggering supports conventional phase-control topologies. Typical applications include static relays, heating regulation, AC motor control, light dimmers, and general ON/OFF mains switching in appliances and industrial equipment. A key design consideration: standard TRIACs require RC snubber networks when driving inductive loads such as motors, because the snubberless W variants (e.g., BTA16-600BW) trade commutation capability for noise immunity; verify gate sensitivity against your drive circuit. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet, as of 2026-09-10.
BTA16-600BWRG - 600V 16A Snubberless TRIAC | STMicroelectronics
The STMicroelectronics BTA16-600BWRG is a Snubberless TRIAC (alternistor) rated for 600 V repetitive peak off-state voltage (VDRM) and 16 A RMS on-state current, housed in an insulated through-hole TO-220AB package. It is designed for general purpose mains power AC switching and ON/OFF control functions. A TRIAC is a three-terminal bidirectional thyristor that conducts current in either direction once triggered by a small gate current, making it the core switching element in AC power control. Within the power semiconductor hierarchy, the TRIAC sits alongside SCRs and AC switches as a member of the thyristor family, and the BTA16-600BWRG targets medium-current AC switching in the 16 A class. Key features include the Snubberless (3Q) commutation capability, which provides very high dI/dt commutation performance without requiring an external RC snubber network, and low thermal resistance achieved through clip bonding technology. The insulated BTA construction uses a low thermal resistance ceramic pad to electrically isolate the tab from the silicon, allowing direct mounting to a grounded heatsink. The BTA series is UL1557 certified. Architecturally, the Snubberless BWRG grade is engineered for applications with demanding commutation conditions, such as inductive loads and motor control, where standard 4Q TRIACs would require snubber networks to prevent false re-triggering. Clip bonding reduces thermal resistance between the die and the package, improving current handling and junction temperature margins compared to wire-bonded alternatives. Typical applications include AC motor speed control, resistive and inductive heater regulation, solid-state relays, light dimmers for inductive loads, and home appliance power switching on 110/230 VAC mains. The 600 V rating provides ample margin for 230 VAC lines with transient excursions. Design-wise, choose an adequate heatsink based on on-state power dissipation (approximately 1.55 V x IT average), and respect the 50 mA gate trigger current requirement when sizing the gate drive. Estimate junction temperature using the TO-220 thermal resistance with the ceramic isolation accounted for. This page synthesizes distributor pricing, drop-in alternatives within the BTA16 family, and practical design notes not consolidated in the manufacturer datasheet.
BTA425Y-800BT - 25A 800V 3Q Hi-Com Triac, TO-220AB | WeEn
The WeEn Semiconductors BTA425Y-800BT is a planar passivated high-commutation three-quadrant (3Q) Triac in an internally insulated SOT78D (TO-220AB) plastic package, rated for 800 V (VDRM) and 25 A RMS on-state current. The series-BT commutation design allows the device to switch the full RMS current at the maximum rated junction temperature (Tj max = 150 °C) without a snubber circuit, simplifying gate drive and reducing BOM cost in high-temperature designs. The 3Q (three-quadrant) triggering architecture suppresses spurious triggering in quadrant IV, making the part robust in noisy AC line environments where inductive or back-EMF transients are common. A Triac is a bidirectional thyristor that integrates two SCR structures in anti-parallel within a single die, allowing AC load control with a single gate terminal. Triacs sit within the thyristor family -> power semiconductors -> discrete semiconductors. Three-quadrant (3Q) Triacs are an evolution of the classic four-quadrant (4Q) Triac: they retain triggering in quadrants I (MT2+, gate+), II (MT2+, gate-) and III (MT2-, gate+), but deliberately disable quadrant IV (MT2-, gate-), which is the operating region most susceptible to false triggering from high dV/dt or commutating dI/dt on AC mains. Snubberless 3Q parts are widely deployed in motor drives, solid-state relays, heating regulators and AC phase-control dimmers. Key features of the BTA425Y-800BT include 800 V repetitive peak off-state voltage (VDRM), 25 A RMS on-state current (IT(RMS)), a high static dV/dt rating, a non-insulated tab variant, and planar passivated die technology for stable leakage and high-temperature operation. The device is suitable for high static and dynamic dV/dt and high dI/dt circuits, and operates across the standard -40 °C to +150 °C junction-temperature range demanded by industrial motor and heater applications. The BTA425Y-800BT is part of WeEn's BT series, characterized by the same die and identical TO-220AB (SOT78D) pinout across voltage grades. Voltage classes in the family include 600 V (BTA425Y-600B), 800 V (BTA425Y-800B) and 1000 V (BTA425Y-1000B), giving designers a scalable platform where PCB layout can stay constant while only the VDRM rating changes. The 800 V grade covers universal 230 V AC mains with generous transient margin. Typical applications include solid-state relays (SSR), AC motor soft-start and reversing controls, heating regulation (HVAC, induction cookers, soldering stations), professional phase-angle dimmers, and universal-motor speed controllers in power tools and white goods. The 25 A RMS rating also enables direct drive of small compressors and pumps without an interposing relay. When designing with this part, observe the thermal resistance of the TO-220AB package and provide an adequate heatsink for currents above ~10 A continuous. Place the gate resistor (typically 100 Ω to 330 Ω) close to the MT1/G pin to limit di/dt into the gate, and keep the gate-MT1 loop short to minimize noise pickup that could otherwise cause unwanted firing. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not consolidated in the WeEn datasheet alone.
BTA425Y-800BT - 800V 25A 3Q Hi-Com Triac | WeEn Semiconductors
The WeEn Semiconductors BTA425Y-800BT is a planar passivated, high-commutation three-quadrant (3Q) Hi-Com Triac rated at 800 V blocking voltage and 25 A on-state RMS current, housed in a TO-220AB (SOT78D) internally insulated plastic package. It is engineered for AC switching applications where high static and dynamic dV/dt combined with high dI/dt can occur, and the three-quadrant triggering architecture eliminates the need for a fourth-quadrant trigger to improve noise immunity. A TRIAC (triode for alternating current) is a bidirectional thyristor that conducts current in both AC half-cycles from a single gate signal, making it the workhorse of low-frequency AC power control. Triacs sit in the thyristor family (thyristor > TRIAC > 3Q Hi-Com Triac) and the broader discrete semiconductor hierarchy. The 'Hi-Com' designation refers to high-commutation variants optimized to withstand fast voltage transitions (high dV/dt) at line-frequency zero-crossings without parasitic retriggering. Key features include 800 V repetitive peak off-state voltage (VDRM), 25 A RMS on-state current (IT(RMS)), a non-insulated tab package variant option, and a gate trigger current optimized for microcontroller-compatible logic-level triggering. The TO-220AB package offers a low thermal resistance path to a clip-on or PCB-mounted heatsink, enabling continuous high-current switching in motor and heater loads. The BTA prefix denotes an isolated tab; the BTY/BTB prefix variants share the same silicon. Technically, the device uses a planar passivated die structure with an internal ceramic-isolated mounting base, providing 2500 V RMS isolation between the metal tab and the heat sink pad. The 3Q Hi-Com architecture suppresses commutating dV/dt failures common in inductive loads (motors, transformers, solenoids), allowing designers to omit snubber networks in many applications and reduce BOM cost. Typical applications include AC motor speed controls, solid-state relays (SSRs), heating regulation, light dimmers, and general-purpose AC static switches in industrial white goods, HVAC controls, and home appliances. The 25 A rating makes it suitable for direct switching of 1-3 HP universal motors and up to 5 kW resistive heater loads on 230 V mains. When designing with this device, derate the on-state current by at least 25% when using a small heatsink, and ensure the gate drive provides sufficient pulse current (>50 mA) at the desired firing angle. Avoid mounting the tab to a grounded heatsink without an insulating pad if the package variant is non-isolated; the BTA-insulated variant of the BTA425Y simplifies single-screw mounting. This page synthesizes the WeEn datasheet (Rev.03, 19 February 2024), live distributor pricing from DigiKey/Mouser/Octopart, drop-in alternative cross-references, and design guidance beyond what is found on the manufacturer product page.
CMPP6027R - 40V 150mA Programmable UJT SOT-23 | Central Semiconductor
The Central Semiconductor CMPP6027R is a surface mount silicon programmable unijunction transistor (PUT) rated for 40V anode-to-cathode voltage and 150mA peak output current, housed in a SOT-23 (TO-236-3 / SC-59 / SOT-23-3) package with 167 mW power dissipation. Its trip parameters - peak current (IP), valley current (IV), and intrinsic standoff ratio (eta) - are programmable through an external resistor divider on the gate. A programmable unijunction transistor (PUT) is a four-layer PNPN threshold switching device whose anode-gate-cathode terminals resemble a small thyristor. Unlike a fixed-ratio UJT, a PUT fires when the anode voltage exceeds the gate voltage plus one PN junction drop, and because the gate is externally accessible, designers set the trigger threshold, peak current, valley current, and standoff ratio with two resistors. PUTs therefore occupy the same functional niche as neon lamps and Schmitt triggers in low-frequency relaxation oscillators, timing circuits, and voltage-detection latches within the broader thyristor and semiconductor family. Key differentiating features of the CMPP6027R include its 40V anode-cathode rating for headroom on industrial rails, 150mA pulse output capability sufficient to drive optocoupler LEDs or thyristor gates directly, fully adjustable IP and IV characteristics, and the compact SOT-23 surface mount footprint that lets designers retrofit through-hole PUT designs such as the 2N6027 into modern PCBs. The device complements Central Semiconductor's CMPP6028R, which offers a different intrinsic standoff ratio binning within the same package. Architecturally, the CMPP6027R is an anode-gate thyristor: forward biasing the anode-gate junction injects gate current, regeneratively turns on the PNPN structure, and latches the anode-cathode path into conduction until the anode current falls below the programmable valley current. This negative-resistance switching behavior is the basis of its use in relaxation oscillators and level-sensitive triggers. Typical applications include sawtooth and pulse relaxation oscillators, time-delay timers, thyristor and triac gate triggering, overvoltage crowbar sensing, and voltage-monitoring alarm circuits where a precise, adjustable threshold is required at minimal BOM cost. Design consideration: because IP, IV, and eta are set by the external R1-R2 gate divider, resistor tolerance directly shifts the trip point; use 1% resistors and confirm the divider current comfortably exceeds the datasheet peak current at the lowest operating temperature. This page adds value beyond the datasheet by consolidating distributor availability, drop-in alternative analysis, application guidance, and pricing context for the CMPP6027R in one reference.
CMPP6028R - 40V, 150mA Programmable UJT, SOT-23 | Central Semiconductor
The Central Semiconductor CMPP6028R is a silicon programmable unijunction transistor (PUT) rated at 40 V and 150 mA, housed in a surface-mount SOT-23 package. Unlike a conventional unijunction transistor, a PUT allows designers to program key characteristics - valley current (IV), peak current (IP), and the intrinsic standoff ratio (eta) - through two external resistors. A programmable unijunction transistor is a four-layer PNPN device belonging to the thyristor family. It behaves as a voltage-triggered switch: when the anode voltage exceeds a threshold set by the gate divider network, the device fires and conducts from anode to cathode. PUTs are widely used as relaxation oscillators, timing circuits, voltage detectors, and SCR trigger devices, occupying the low-power end of the power-management and discrete-semiconductor hierarchy. Key features of the CMPP6028R include a 40 V anode-to-cathode voltage rating, a 150 mA maximum current capability, and a compact SOT-23 surface-mount package suitable for automated assembly. The programmability of IP, IV, and eta gives it flexibility that fixed-parameter UJTs cannot offer, allowing one part number to serve many oscillator and timing designs. Architecturally, the CMPP6028R implements the anode-gate-cathode structure of a PUT with the gate accessible on a package pin. The intrinsic standoff ratio and peak/valley currents are set externally: increasing the gate divider resistance raises the standoff ratio and reduces peak current, tuning oscillator frequency and triggering thresholds. Maximum power dissipation for this family is 167 mW per the manufacturer data. Typical applications include relaxation oscillators, long-duration timers, overvoltage detectors, lamp flashers, and gate-trigger circuits for SCRs and triacs in low-power industrial and consumer designs. Design consideration: keep total dissipation within the 167 mW package limit and ensure the external divider current substantially exceeds the valley current so oscillation does not stall. This page synthesizes distributor availability data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
CS223-4M - 4A 600V Surface Mount SCR | Central Semiconductor
The Central Semiconductor CS223-4M is a 4 A surface mount silicon controlled rectifier (SCR) rated at 600 V blocking voltage, housed in the SOT-223 (TO-261AA) epoxy molded package. According to the manufacturer datasheet, the CS223 family covers 600 V through 800 V grades in a 4.0 A rating, and the CS223-4M is specifically the 600 V member of that family. An SCR, or silicon controlled rectifier, is a three-terminal thyristor that acts as a latching switch: once a small gate trigger current is applied between gate and cathode, the device conducts from anode to cathode and remains on until the anode current falls below the holding current. In the power-electronics hierarchy, the SCR sits among thyristors alongside TRIACs and DIACs, and is the workhorse of half-wave and full-wave controlled rectification, crowbar overvoltage protection, and phase-control circuits. Key features of the CS223-4M include a 4.0 A average on-state current rating, 600 V repetitive peak off-state voltage, a compact surface mount SOT-223 case with a thermally conductive tab, and epoxy molded construction designed for sensing circuit applications and control systems. The SOT-223 tab (which is electrically common to the anode) provides a low-resistance thermal path to the PCB copper, allowing several watts of dissipation without an external heatsink. The device uses standard-recovery silicon thyristor technology optimized for line-frequency (50/60 Hz) applications rather than high-frequency switching. Its latching behavior makes it well suited to crowbar circuits that dump fault energy into a shunt path, overvoltage sensing, and gating of loads driven from rectified AC mains. Typical applications include AC power control, overvoltage crowbar protection in linear power supplies, sensing and alarm latch circuits, and industrial control systems where a robust, low-cost latching switch is required. When designing with this SCR, ensure the gate trigger current is available under worst-case cold-temperature conditions, and verify that latching current is reached before the trigger pulse ends; a snubber across anode-cathode suppresses dv/dt false triggering. This page synthesizes distributor data, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
CS223-4M-TR-PBFREE - 600V 4A SOT-223 SCR | Central Semiconductor
The Central Semiconductor CS223-4M-TR-PBFREE is a 600V, 4A (RMS) surface mount silicon controlled rectifier (SCR) rated for 30A surge current, housed in a 4-pin (3+tab) SOT-223 epoxy-molded package supplied on tape and reel. It is a lead-free, Pb-free device designed for sensing circuit applications and control systems. An SCR (silicon controlled rectifier), also called a thyristor, is a four-layer semiconductor device that acts as a latching switch: once triggered by a small gate current, it conducts from anode to cathode until the current falls below the holding level. Within the power-semiconductor hierarchy, the thyristor family sits alongside MOSFETs and IGBTs as a power switching device, and SCRs remain the preferred solution for AC line-controlled latching functions due to their ruggedness and low conduction loss. Key features of the CS223-4M include a 600V off-state voltage rating, a maximum gate trigger voltage (Vgt) of 800 mV, and a very sensitive maximum gate trigger current (Igt) of 200 uA. This high gate sensitivity allows direct driving from low-power sensing circuits, microcontroller ports, or optocoupler outputs without an external gate driver stage, reducing bill-of-material cost and board area. The epoxy-molded SOT-223 construction provides good thermal performance for a compact surface-mount footprint; the tab (pin 4) is electrically part of the anode path and solders to the PCB copper area for heat spreading. The device is a standard-recovery SCR, suited to 50/60 Hz line-frequency phase control and crowbar circuits rather than high-frequency switching. Typical applications include overvoltage crowbar protection in power supplies, AC line latching control, sensing and alarm trip circuits, and industrial control systems where a small signal must latch a larger load current. Design consideration: because the gate is highly sensitive (200 uA max Igt), keep the gate trace short and add a gate-to-cathode resistor (typically 1k ohm) to prevent false triggering from leakage or noise pickup. This page synthesizes distributor availability data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
TA200616 - Phase Control SCR 1800A 2200V | Powerex
The Powerex TA200616 is a phase control SCR (silicon controlled rectifier) rated for 1600-1800 amperes average on-state current and blocking voltages spanning 100 to 2200 volts, intended for high-power AC line commutated conversion applications. A phase control SCR is a thyristor family device that switches from a blocking state to a conducting state when a small gate current pulse is applied at a controlled phase angle of the AC mains cycle. Within the power semiconductor hierarchy, it sits as a discrete thyristor, a sibling of the TRIAC and GTO, and a foundational building block of power conversion systems such as rectifiers, controlled bridges, and soft starters. Because conduction is latched, the device turns off only when the anode current falls below the holding threshold at each AC zero crossing, making it exceptionally rugged for line-frequency power control. The headline specifications of the TA200616, per the Powerex datasheet, are its very high average current class of 1600-1800 A and its wide repetitive peak voltage coverage from 100 V up to 2200 V. This voltage span allows one mechanical and thermal design to serve multiple line-voltage standards by selecting the appropriate voltage-code suffix. Devices in this class are typically supplied in press-pack (hockey-puck) housings with double-side cooling, which maximizes surge current capability, a critical parameter for failure-tolerant rectifier stacks and DC transmission valves. Phase control SCRs of this rating rely on a diffusion gate structure optimized for high di/dt immunity and low on-state voltage, which reduces conduction losses at thousands of amperes. Thermal design dominates: the heatsink, clamp force, and snubber network must be engineered around the surge (I2t) rating and gate trigger specifications published by the manufacturer. Typical applications include high-current DC power supplies, electrochemical rectifiers (chlorine, aluminum smelting), controlled DC motor drives, welding power sources, soft starters for large induction motors, and AC power controllers for furnace heating. When integrating this SCR, verify the exact voltage code of the ordered suffix against the datasheet, and apply RC snubbers sized to the manufacturer dv/dt limits to prevent unwanted triggering from line transients. This page consolidates verified distributor data, stock indications, and datasheet references for the TA200616, adding sourcing and application context not present in the manufacturer datasheet alone.
VS-50TPS12LHM3 - 50A 1200V Phase Control SCR TO-247AD | Vishay
Vishay VS-50TPS12LHM3 is a 50 A high-voltage phase-control silicon controlled rectifier (SCR) rated at 1200 V Vrrm in a 3-pin TO-247AD through-hole package with isolated mounting tab (HM3 suffix denotes high-voltage isolation). The part belongs to Vishay's 50TPS12 high-voltage series designed for medium-power switching and phase-control applications. A silicon controlled rectifier (SCR) is a four-layer (PNPN) three-terminal thyristor that latches into conduction when its gate receives a sufficient trigger current, and remains ON until the load current drops below the holding threshold. The SCR sits in the thyristor hierarchy: SCR -> thyristor -> discrete semiconductor -> power semiconductor. Phase-control SCRs are optimized for line-frequency AC applications where the device is fired at a controlled phase angle to regulate power delivered to resistive or inductive loads such as heaters, motor fields, and battery chargers. Key features include 1200 V repetitive peak off-state voltage (Vrrm), 79 A RMS on-state current, 630 A non-repetitive peak on-state current for surge handling, and a typical 150 mA gate trigger current (Igt). The HM3 isolated package allows direct heatsink mounting without insulating hardware, reducing assembly cost and thermal resistance. AEC-Q101 qualification supports automotive and heavy-industrial environments. Technically, the device uses a center-fired all-diffused silicon die with a glass-passivated junction for stable blocking and long-term reliability. The TO-247AD isolated tab provides typical RthJC of approximately 0.45 C/W, supporting 120 mA continuous operation at case temperatures up to 105 C with proper heatsinking. The 1200 V class voltage rating provides ample margin on 480 V and 600 V industrial line-rectified buses. Typical applications include AC phase-angle dimming and heater control, soft-start circuits for large motors, industrial battery chargers, static switches in power conversion, and welding power supplies. The 1200 V rating also makes it suitable for 690 V renewable-energy inverter input rectification and crowbar protection. When designing with this part, ensure the heatsink is sized for the worst-case RMS current times the on-state voltage drop. The isolated HM3 tab eliminates the need for a mica spacer, but the mounting torque must follow Vishay's guidelines to avoid thermal-cycle fatigue. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found on a single manufacturer datasheet page.
VS-P105W - 25A 1200V SCR Power Module PACE-PAK | Vishay
The Vishay VS-P105W is a 25 A, 1200 V single-phase thyristor bridge power module with integrated passivated SCRs and diodes in a chassis-mount PACE-PAK (8-pin) housing. According to the Vishay VS-P100 series datasheet (document 93754), the module contains 2 SCRs and 2 diodes arranged in a bridge (Layout 1) configuration, delivering 25 A average on-state current (IT(AV)) and a peak repetitive off-state voltage VDRM of 1200 V. The peak non-repetitive surge current ITSM is 357 A (50 Hz), and the maximum gate trigger current IGT is 60 mA. A power module is a packaged assembly of two or more discrete power semiconductors (thyristors, diodes, MOSFETs, IGBTs) integrated into a single isolated, base-plate-cooled housing. Compared with discrete through-hole TO-220/TO-247 designs, a power module simplifies mechanical assembly, eliminates individual insulator pads, and provides a uniform thermal interface for a single heatsink. Within the broader taxonomy, the VS-P105W sits in the SCR module branch of thyristors, which itself belongs to the discrete semiconductor family of power management components. Key features of the VS-P105W include glass-passivated junctions for long-term reliability, an electrically isolated base plate (2500 V RMS isolation typical), high dv/dt dynamic characteristics, and a wide voltage range up to 1200 V VRRM/VDRM. The PACE-PAK package combines a robust mechanical housing with convenient screw-type power terminals, simplifying both PCB-free power conversion and thermal management. The integrated bridge topology makes the VS-P105W suitable for AC-DC controlled rectification, soft-start circuits, and motor phase control. The 1200 V rating provides ample margin for 480 V three-phase rectified bus operation, and the 25 A continuous current supports kilowatt-class industrial loads. The 357 A surge rating absorbs inrush during motor startup and transformer energization. Typical applications include industrial motor drives, welding power supplies, battery chargers, UPS input rectifiers, temperature-controlled heating, and large DC power supplies. The isolated base plate allows direct mounting to a chassis or heatsink without additional insulating hardware. When designing with the VS-P105W, ensure the heatsink thermal resistance is sized to keep the junction below 125 C under worst-case load. Mount torque on the power terminals must follow the datasheet specification to avoid thermal cycling fatigue, and a properly rated snubber or MOV is recommended for inductive loads. This page synthesizes distributor pricing, cross-reference alternatives, and practical thermal/design notes beyond what the manufacturer datasheet alone provides - assembled from DigiKey, Mouser, and Vishay official documentation for power-electronics engineers.