2EDN7524GXTMA1 vs 1EDN7146GXTMA1 Comparação
Comparação detalhada lado a lado de 2EDN7524GXTMA1 por Infineon e 1EDN7146GXTMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ AtivoComparação de especificações
| Parâmetro | 2EDN7524GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,82 | $1,05 |
| Product Type | Low-side gate driver IC | — |
| Number of Channels | 2 (dual) | — |
| Drive Current (Source/Sink) | 5 A peak | — |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible | — |
| Input Voltage Tolerance | -10 V to +20 V on logic pins | — |
| Supply Voltage (VCC) | 4.5 V to 20 V [DATA_NEEDED: exact range] | 4.5 V to 20 V |
| Propagation Delay | 20 ns typical [DATA_NEEDED: exact figure] | — |
| Channel-to-Channel Delay Matching | 1 ns | — |
| Tempo de subida | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| Tempo de descida | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| Output Stage | Rail-to-rail, separate source/sink | — |
| UVLO Protection | Yes | — |
| Temperatura de operação | -40 C to +125 C | -40 C to +125 C |
| Encapsulamento | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad | PG-VSON-10-4 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs | — |
| Driver Type | — | High-side, single-channel |
| Number of Drivers | — | 1 |
| Logic Type | — | Non-Inverting |
| Input Type | — | TDI (Truly Differential Inductor) |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |