BSC040N10NS5ATMA1 vs IPT015N10N5ATMA1 Comparação
Comparação detalhada lado a lado de BSC040N10NS5ATMA1 por Infineon e IPT015N10N5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC040N10NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,93 | $2,78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| Encapsulamento | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-HSOF-8-1 (TOLL) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT015N10N5ATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| Configuration | — | Single |
| Temperatura de operação | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |