BSC123N08NS3GATMA1 vs IAUC64N08S5L075ATMA1 Comparação
Comparação detalhada lado a lado de BSC123N08NS3GATMA1 por Infineon e IAUC64N08S5L075ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,71 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Temperatura de junção de operação | -55C to +150C | -55 °C to +175 °C |
| Encapsulamento | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant with exemption | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| Número de pinos | — | 8 |