BSF134N10NJ3GXUMA1 vs BSC019N08NS5ATMA1 Comparação
Comparação detalhada lado a lado de BSF134N10NJ3GXUMA1 por Infineon e BSC019N08NS5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSF134N10NJ3GXUMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,78 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| Encapsulamento | MG-WDSON-2 (CanPAK M) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| Faixa de temperatura de operação | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | -55 C to +150 C |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 |
| Technology | Trench-gate OptiMOS planar | OptiMOS 5 (N-channel trench) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |