BSZ0501NSIATMA1 vs BSC0501NSIATMA1 Comparação
Comparação detalhada lado a lado de BSZ0501NSIATMA1 por Infineon e BSC0501NSIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSZ0501NSIATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,29 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | OptiMOS 5 25V/30V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| Encapsulamento | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg typical] |
| Faixa de temperatura de operação | [DATA_NEEDED: Tj max] | — |
| Status RoHS | Compliant | Compliant |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Temperatura de junção de operação | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Technology | — | Trench-gate OptiMOS 5 |