BSZ060NE2LSATMA1 vs BSC0504NSIATMA1 Comparação
Comparação detalhada lado a lado de BSZ060NE2LSATMA1 por Infineon e BSC0504NSIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSZ060NE2LSATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,27 | $0,00 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Faixa de temperatura de operação | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Encapsulamento | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | unknown |
| Nível MSL | 1 | — |
| Shipping Packaging | Tape & Reel | — |
| Tipo de transistor | — | N-channel MOSFET |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| Número de pinos | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| Tensão de limiar de gate | — | [DATA_NEEDED: gate threshold voltage] |
| Resistência térmica | — | [DATA_NEEDED: thermal resistance] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |