IGB50N60TATMA1 vs IGB50N60T Comparação
Comparação detalhada lado a lado de IGB50N60TATMA1 por Infineon e IGB50N60T por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IGB50N60TATMA1 | IGB50N60T |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | IGBTs | IGBTs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,20 | $2,36 |
| Manufacturer | Infineon Technologies | — |
| Series | Trenchstop IGBT3 | — |
| Technology | Trench + Field-Stop | — |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 100 A | — |
| Continuous Collector Current (IC) at TC=100°C | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) | — |
| Tensão de saturação coletor-emissor (Vce(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) | — |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C | — |
| Temperatura de junção de operação | -40 °C to +150 °C | — |
| Encapsulamento | PG-TO263-3-2 (D2PAK / TO-263) | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) |
| Tipo de montagem | Surface Mount | Surface Mount (D2Pak tab acts as drain/collector) |
| Co-packaged Diode | Anti-parallel EmCon3 diode | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | — |
| Configuration | Single | — |
| Continuous DC Collector Current (IC, TC=100°C) | — | 50 A |
| Total Power Dissipation (Ptot, TC=25°C) | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | — | 5.0 V (typical), 4.5 V min / 6.5 V max |
| Gate-Emitter Voltage Maximum (VGES) | — | ±20 V |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | — | [DATA_NEEDED: VCE(sat) exact value] |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | — | [DATA_NEEDED: IC nominal] |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon value] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | — | 1.7 mJ (typical) |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | — | 10 µs (typical) |
| Faixa de temperatura de junção de operação | — | -40 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Technology Family | — | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode |