IPC100N04S51R7ATMA1 vs IPC100N04S5L1R5ATMA1 Comparação
Comparação detalhada lado a lado de IPC100N04S51R7ATMA1 por Infineon e IPC100N04S5L1R5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPC100N04S51R7ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,82 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Temperatura de junção de operação | -55 °C to +175 °C | — |
| Encapsulamento | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (260 °C peak reflow) | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | Yes |
| Avalanche Tested | 100% tested | 100% |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Faixa de temperatura de operação | — | -55C to +175C |