IPC70N04S5L4R2ATMA1 vs IPC100N04S51R7ATMA1 Comparação
Comparação detalhada lado a lado de IPC70N04S5L4R2ATMA1 por Infineon e IPC100N04S51R7ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPC70N04S5L4R2ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,78 | $0,82 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Encapsulamento | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (SS08 leadless) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (up to 260°C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% (60 A production test) | 100% tested |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Tipo de transistor | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperatura de junção de operação | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Built-in Body Diode | — | Yes |