IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Comparação
Comparação detalhada lado a lado de IPC90N04S5L3R3ATMA1 por Infineon e IPD90N04S403ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IPC90N04S5L3R3ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,96 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Temperatura de junção de operação | -55°C to +175°C | -55C to +175C |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Encapsulamento | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3-313 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | 100% avalanche-tested |
| RoHS Compliance | Compliant (Green Product) | Compliant (Green Package) |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Nível MSL | — | MSL1 (peak reflow up to 260C) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Technology | — | Trench MOSFET (OptiMOS-T2) |