IPD060N03LGATMA1 vs BSC0902NSIATMA1 Comparação
Comparação detalhada lado a lado de IPD060N03LGATMA1 por Infineon e BSC0902NSIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPD060N03LGATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,20 | $0,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 30V | OptiMOS 30V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, TC=25C) | 50 A | — |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | 200 A | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| On-State Resistance (RDS(on), VGS=10V) | 6.0 mOhm (typ) / 7.5 mOhm (max) | — |
| On-State Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg, typ) | 21 nC | — |
| Output Charge (Qoss, typ) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Power Dissipation (PD, TC=25C) | 56 W | — |
| Temperatura de junção de operação | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC, max) | 2.5 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | 62 C/W | — |
| Encapsulamento / Caixa | PG-TO252-3 (DPAK) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Packing | Tape & Reel (T/R), 2500 per reel | — |
| AEC-Q101 / Automotive Grade | Not qualified | — |
| Technology / Generation | OptiMOS 30V, trench MOSFET | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Faixa de temperatura de operação | — | -55C to +150C (junction) |
| Encapsulamento | — | PG-TDSON-8-6 (TDSON-8) |
| Built-in Diode | — | Yes (single with built-in diode) |
| Lead-Free | — | Yes |
| Livre de halogênio | — | Yes |