IPD082N10N3GATMA1 vs IPB072N15N3GATMA1 Comparação
Comparação detalhada lado a lado de IPD082N10N3GATMA1 por Infineon e IPB072N15N3GATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IPD082N10N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,14 | $2,84 |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperatura de junção de operação | -55°C to +175°C | — |
| Encapsulamento / Caixa | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Nível MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 300 W |
| R_DS(on) typical at VGS=10V | — | 7.2 mOhm |
| R_DS(on) max at VGS=10V | — | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | — | +/-20 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Faixa de temperatura de operação | — | -55 C to +175 C |
| Encapsulamento | — | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Avalanche Energy Rated | — | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | — | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | — | GATMA1 (tape and reel, 1000 pcs) |