IPD082N10N3GATMA1 vs IPD038N06NF2SATMA1 Comparação
Comparação detalhada lado a lado de IPD082N10N3GATMA1 por Infineon e IPD038N06NF2SATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IPD082N10N3GATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,14 | $0,95 |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperatura de junção de operação | -55°C to +175°C | -55°C to +175°C |
| Encapsulamento / Caixa | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Nível MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Continuous Drain Current (ID) at TA=25°C | — | 20 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 3.85 mΩ max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Typical Gate Charge (Qg) at VGS=10V | — | 68 nC |
| Input Capacitance (Ciss) | — | 6700 pF |
| Output Capacitance (Coss) | — | 670 pF |
| Reverse Transfer Capacitance (Crss) | — | 43 pF |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| Encapsulamento | — | PG-TO252-3 (DPAK) |
| Channel Mode | — | Enhancement |