IPD50R380CEAUMA1 vs IPD60R380C6ATMA1 Comparação
Comparação detalhada lado a lado de IPD50R380CEAUMA1 por Infineon e IPD60R380C6ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IPD50R380CEAUMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,34 | $0,41 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | — |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| Temperatura de junção de operação | -55C to +150C | — |
| Technology | CoolMOS CE (super-junction) | CoolMOS C6 Superjunction |
| Channel Type | N-Channel | — |
| Encapsulamento | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| FET Type | — | N-Channel |
| Nível MSL | — | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |