IPL60R285P7AUMA1 vs IKD15N60RFATMA1 Comparação
Comparação detalhada lado a lado de IPL60R285P7AUMA1 por Infineon e IKD15N60RFATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPL60R285P7AUMA1 | IKD15N60RFATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | IGBTs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,88 | $1,35 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) |
| Drain-to-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 285 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Output Capacitance (Coss) typ | [DATA_NEEDED: Coss value] | — |
| Maximum Power Dissition (PD) at Tc=25C | 59 W | — |
| Faixa de temperatura de operação | -55C to +150C (junction) | — |
| Encapsulamento / Caixa | PG-VSON-4 (surface mount) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration | Single N-channel, 4 pins (Gate, Drain, Source, Tab) | — |
| Status RoHS | Compliant | — |
| Gate ESD Protection | Integrated | — |
| Nível MSL | 1 (per Infineon PG-VSON-4 family) | — |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC at TC=25C) | — | 30 A |
| Continuous Collector Current (IC at TC=100C) | — | 15 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Gate-Emitter Voltage (VGES) | — | +/-20 V |
| Gate-Emitter Threshold (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| VCE(sat) at IC=15A, VGE=15V | — | 1.5 V (typical) |
| Maximum Power Dissipation (Ptot) | — | 250 W |
| Temperatura de junção de operação | — | -40C to +175C |
| Integrated Anti-Parallel Diode | — | Yes (RC-Drives Fast, co-packaged) |
| Encapsulamento | — | PG-TO252-3 (DPAK), 3 pins (2 + tab) |
| Switching Speed Class | — | Hard-switching, RC-Drives Fast |
| Target Application | — | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) |
| RoHS Compliance | — | Compliant |