IQE013N04LM6ATMA1 vs IQE013N04LM6SCATMA1 Comparação
Comparação detalhada lado a lado de IQE013N04LM6ATMA1 por Infineon e IQE013N04LM6SCATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AtivoInfineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IQE013N04LM6ATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,71 | $1,02 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Encapsulamento | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad |
| Faixa de temperatura de operação | -55 °C to +175 °C | [DATA_NEEDED: T_J min/max] |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 1.35 mΩ |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | — | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | — | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | — | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | — | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | — | 3800 pF |
| Packaging | — | Tape & Reel |
| Part Family | — | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN |