IQE031N08LM6CGSCATMA1 vs IQE036N08NM6CGATMA1 Comparação
Comparação detalhada lado a lado de IQE031N08LM6CGSCATMA1 por Infineon e IQE036N08NM6CGATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IQE031N08LM6CGSCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,74 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 (40 V to 100 V) | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Encapsulamento | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55 C to +175 C (junction, typical for OptiMOS 6) | -55 C to +175 C (junction, Tj) |
| Avalanche Tested | 100% avalanche tested | — |
| Nível MSL | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |