IRF7105PBF vs IRF7105TRPBF Comparação

Comparação detalhada lado a lado de IRF7105PBF por Infineon e IRF7105TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRF7105PBF IRF7105TRPBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,61 $0,30
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET (IR MOSFET, fifth generation)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
Encapsulamento / Caixa 8-SOIC (SO-8) —
Tipo de montagem Surface Mount Surface Mount
Contagem de pinos 8 8
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial —
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Encapsulamento — 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) — 2 W
Faixa de temperatura de operação — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant

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