IRFR220NPBF vs IRFR220NTRLPBF Comparação

Comparação detalhada lado a lado de IRFR220NPBF por Infineon e IRFR220NTRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ Ativo

Comparação de especificações

Parâmetro IRFR220NPBF IRFR220NTRLPBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,74 $0,22
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Tipo de montagem Surface Mount Surface Mount
Encapsulamento / Caixa TO-252AA (DPAK) —
Technology HEXFET (Planar) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge Qg]
Faixa de temperatura de operação -55C to +150C (junction) -55C to +150C (junction)
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Contagem de pinos 3 (Gate, Drain, Source) plus tab —
Nível MSL 1 (per JEDEC J-STD-020) 1
Polarity — N-Channel
Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 200 V
Continuous Drain Current (Id) at Tc=25C — 5 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 0.800 ohm (max)
Gate-to-Drain Charge (Qgd) — Low (per datasheet - HEXFET design)
Power Dissipation (Pd) at Tc=25C — 43 W
Encapsulamento — TO-252AA (DPAK), 2 Leads + Tab, SC-63
Status RoHS — Compliant (Pb-free PBF suffix)
Packaging — Tape & Reel (Left orientation - TRLPBF)
Avalanche Rated — Yes (HEXFET ruggedized design)
Technology Family — HEXFET, Planar, Generation 3

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