IRL3705NPBF vs IRFB3207ZPBF Comparação
Comparação detalhada lado a lado de IRL3705NPBF por Infineon e IRFB3207ZPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRL3705NPBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,92 | $1,62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc | 89 A | — |
| Corrente de dreno pulsada | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc | 170 W | — |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | 65.3 nC | — |
| Maximum Junction Temperature | 175 C | — |
| Technology | HEXFET (planar cell, fifth generation) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Encapsulamento | TO-220AB (3-pin through-hole) | TO-220AB (3-lead through-hole) |
| Tipo de montagem | Through Hole | Through Hole |
| Gate Drive Level | Logic-level | — |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | Yes (improved Z-variant ruggedness) |
| Lead-Free (PBF suffix) | Yes | — |
| Status RoHS | Compliant (per PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperatura de junção de operação | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Nível MSL | — | N/A (through-hole) |