ISC016N08NM8ATMA1 vs IPTG025N15NM6ATMA1 Comparação
Comparação detalhada lado a lado de ISC016N08NM8ATMA1 por Infineon e IPTG025N15NM6ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | ISC016N08NM8ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,02 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg value] |
| Faixa de temperatura de operação | -55 C to +150 C (junction) | -55 C to +175 C (typical for OptiMOS 6) |
| Encapsulamento | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-HSOG-8-1 (TOLG) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 6 150 V (N-channel trench) |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Nível MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |