ISK057N04LM6ATLA1 vs IQE020N04LM6CGATMA1 Comparação
Comparação detalhada lado a lado de ISK057N04LM6ATLA1 por Infineon e IQE020N04LM6CGATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | ISK057N04LM6ATLA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,52 | $1,75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Trench (OptiMOS 6) | OptiMOS 6, TrenchFET-class |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Faixa de temperatura de operação | -55 °C to +150 °C | -55°C to +150°C |
| Encapsulamento / Caixa | PG-VSON-6-1 (PQFN 2x2) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Encapsulamento | — | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Configuration | — | Single N-Channel, source-down |