ISZ028N03LF2SATMA1 vs BSC019N08NS5ATMA1 Comparação
Comparação detalhada lado a lado de ISZ028N03LF2SATMA1 por Infineon e BSC019N08NS5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | ISZ028N03LF2SATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,49 | $1,78 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Encapsulamento | PG-TSDSON-8 FL (FL = flat lead) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +175C (junction, typical) | -55 C to +150 C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |