K9FGGY8J5A-BCK0 vs K9DVGY8J5M Comparação
Comparação detalhada lado a lado de K9FGGY8J5A-BCK0 por Samsung Electronics e K9DVGY8J5M por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9FGGY8J5A-BCK0 ✓ AtivoComparação de especificações
| Parâmetro | K9FGGY8J5A-BCK0 | K9DVGY8J5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $1,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 Series NAND Flash | — |
| Technology | 3D V-NAND | — |
| Tipo de memória | NAND Flash (non-volatile) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: die density (Gb)] |
| Organização da memória | [DATA_NEEDED: organization] | — |
| Cell Type | [DATA_NEEDED: cell type TLC/MLC] | — |
| Supply Voltage VCC | [DATA_NEEDED: supply voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ] | — |
| Interface | [DATA_NEEDED: interface type/toggle mode] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Encapsulamento | [DATA_NEEDED: package and ball count] | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tipo de montagem | Surface Mount | Surface Mount |
| Speed Grade Suffix | BCK0 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Nível MSL | [DATA_NEEDED: MSL level] | — |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Tipo de interface | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Read Time (tR) | — | [DATA_NEEDED: tR typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |