K9KUGY8J7C-CCK0 vs K9LUGY8J7D-BCK0 Comparação

Comparação detalhada lado a lado de K9KUGY8J7C-CCK0 por Samsung Electronics e K9LUGY8J7D-BCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9KUGY8J7C-CCK0 K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 ✓ Ativo
Samsung Electronics
K9LUGY8J7D-BCK0 K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 ✓ Ativo

Comparação de especificações

Parâmetro K9KUGY8J7C-CCK0 K9LUGY8J7D-BCK0
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-Series V-NAND —
Tipo de memória NAND Flash —
Cell Type TLC (Triple-Level Cell) [DATA_NEEDED: cell type (MLC/TLC/QLC)]
Technology Samsung V-NAND (3D NAND) —
Density [DATA_NEEDED: total device density] [DATA_NEEDED: density]
Organização da memória [DATA_NEEDED: page/block/plane organization] [DATA_NEEDED: organization]
Interface [DATA_NEEDED: asynchronous/synchronous toggle interface mode] [DATA_NEEDED: interface type]
Tensão de alimentação [DATA_NEEDED: VCC supply voltage range] [DATA_NEEDED: VCC range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Program/Erase Cycles [DATA_NEEDED: endurance rating] —
Package Type BGA —
Temperatura de operação Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Tipo de montagem Surface Mount Surface Mount
Status RoHS Lead free / RoHS (per Samsung K9-family product pages) unknown
Nível MSL [DATA_NEEDED: moisture sensitivity level] —
Product Type — 3D V-NAND Flash Memory
Memory Technology — V-NAND (3D NAND flash)
Block Size — [DATA_NEEDED: block size]
Program Time (typ) — [DATA_NEEDED: tPROG]
Erase Time (typ) — [DATA_NEEDED: tBERS]
Read Time (typ) — [DATA_NEEDED: tR]
Endurance — [DATA_NEEDED: P/E cycles]
Encapsulamento — [DATA_NEEDED: package type and dimensions]

Fichas técnicas e recursos

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