K9LUGY8J7D-BCK0 vs K9MUGY8R4A-CCQ0 Comparação

Comparação detalhada lado a lado de K9LUGY8J7D-BCK0 por Samsung Electronics e K9MUGY8R4A-CCQ0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9LUGY8J7D-BCK0 K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 ✓ Ativo
Samsung Electronics
K9MUGY8R4A-CCQ0 K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 ✓ Ativo

Comparação de especificações

Parâmetro K9LUGY8J7D-BCK0 K9MUGY8R4A-CCQ0
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory —
Memory Technology V-NAND (3D NAND flash) V-NAND (vertical NAND flash)
Density [DATA_NEEDED: density] [DATA_NEEDED: total density]
Cell Type [DATA_NEEDED: cell type (MLC/TLC/QLC)] [DATA_NEEDED: cell type (MLC/TLC)]
Organização da memória [DATA_NEEDED: organization] [DATA_NEEDED: page/block organization]
Interface [DATA_NEEDED: interface type] —
Tensão de alimentação [DATA_NEEDED: VCC range] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Read Time (typ) [DATA_NEEDED: tR] —
Endurance [DATA_NEEDED: P/E cycles] —
Temperatura de operação [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Encapsulamento [DATA_NEEDED: package type and dimensions] —
Tipo de montagem Surface Mount Surface Mount
Status RoHS unknown [DATA_NEEDED: RoHS status]
Product Family — K9 V-NAND (NAND Flash)
Tipo de interface — [DATA_NEEDED: interface (Toggle DDR/ONFI)]
Maximum I/O Speed — [DATA_NEEDED: data transfer rate]
Supply Voltage - VCC — [DATA_NEEDED: VCC range]
Supply Voltage - VCCQ — [DATA_NEEDED: VCCQ range]
Page Program Time (typ) — [DATA_NEEDED: tPROG]
Block Erase Time (typ) — [DATA_NEEDED: tBERS]
Endurance (P/E cycles) — [DATA_NEEDED: endurance]
Package Type — [DATA_NEEDED: package type and pin count]

Fichas técnicas e recursos

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