K9LUGY8J7D-CCK0 vs K9KUGY8J7C-BCK0 Comparação
Comparação detalhada lado a lado de K9LUGY8J7D-CCK0 por Samsung Electronics e K9KUGY8J7C-BCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ AtivoSamsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ AtivoComparação de especificações
| Parâmetro | K9LUGY8J7D-CCK0 | K9KUGY8J7C-BCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $9,55 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Tipo de memória | NAND Flash (V-NAND) | NAND Flash (TLC V-NAND) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| Encapsulamento | BGA (surface mount) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Interface | [DATA_NEEDED: interface type / toggle DDR mode] | — |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size in KB] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Tensão de alimentação | [DATA_NEEDED: supply voltage (V)] | — |
| Temperatura de operação | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: temperature range in C] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Organização da memória | — | [DATA_NEEDED: page/block organization] |
| Cell Type | — | TLC (3 bits/cell) |
| Tipo de interface | — | [DATA_NEEDED: toggle DDR / ONFI mode] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range in V] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range in V] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Package Type | — | BGA |
| Package Code | — | [DATA_NEEDED: package code / ball count] |
| Grade Suffix | — | BCK0 |