MRF5S21045NBR1 vs MRF6S18100NBR1 Comparação

Comparação detalhada lado a lado de MRF5S21045NBR1 por NXP Semiconductors e MRF6S18100NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S21045NBR1 MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP

MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP

MRF5S21045NBR1 Obsolete
NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete

Comparação de especificações

Parâmetro MRF5S21045NBR1 MRF6S18100NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Obsolete Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $25,20 $68,90
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 2110 MHz to 2170 MHz —
Test Frequency 2.12 GHz 1.99 GHz
Output Power (Avg) 10 W —
Power Gain 14.5 dB (typical at 2.12 GHz, 28 V) —
Drain-Source Voltage (Max Rated) 68 V —
Test Supply Voltage (Vdd) 28 V —
Test Current 500 mA —
Encapsulamento TO-272 WB-4 (over-molded plastic) —
Supplier Device Package TO-272 WB-4 TO-272 WB-4
Tipo de montagem Surface Mount Surface Mount / Flange Mount
Operating Mode Class AB Class AB / Class C (per design)
Application W-CDMA base station, TDMA/CDMA, multicarrier amplifier RF Power Amplifier (GSM/GSM EDGE base station)
Technology Laterally Diffused MOS (LDMOS) —
Compliance RoHS (status per distributor listing - confirm at order) —
Manufacturer NXP USA Inc. (formerly Freescale Semiconductor) —
Frequency Range — 1805 MHz to 1990 MHz
Drain-Source Voltage (V(BR)DSS) — 68 V
Test Supply Voltage (VDD) — 28 V
Test Drain Current — 900 mA
Output Power (Pout) — 100 W
Power Gain (Gps) — 14.5 dB (typical at 1.99 GHz)
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Encapsulamento / Caixa — TO-272 WB-4
Configuration — Single, common-source
Status RoHS — Compliant (per NXP product page)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação