MRF5S9101NR1 vs MRF5S9101MR1 Comparação
Comparação detalhada lado a lado de MRF5S9101NR1 por NXP Semiconductors e MRF5S9101MR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ AtivoComparação de especificações
| Parâmetro | MRF5S9101NR1 | MRF5S9101MR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Obsolete |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $61,40 | $49,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S9101NR1 | — |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | GSM / GSM EDGE / N-CDMA base station final-stage PA |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 17.5 dB at 960 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Faixa de temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Encapsulamento / Caixa | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | TO-270 WB-4 (Case 1486-03, Style 1) |
| Tipo de montagem | Surface / Flange Mount (through-board thermal pad) | Chassis / Flange Mount (through-hole flange) |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Technology | — | RF Power Field Effect Transistor |
| Test Voltage | — | 26 V |
| Test Current (Quiescent) | — | 700 mA |
| Power Output (POUT) | — | 100 W (CW) |
| Drain-Source Voltage (Rated) | — | 68 V |
| Drain Current Rating | — | [DATA_NEEDED: maximum continuous drain current] |
| Supplier Device Package | — | TO-270 WB-4 |
| Lead Free Status | — | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) |
| Status RoHS | — | Compliant (lead-free N-suffix variants) |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Thermal Resistance Junction-to-Case | — | [DATA_NEEDED: RθJC value] |