MRF8S9102NR3 vs MRF8S9202NR3 Comparação

Comparação detalhada lado a lado de MRF8S9102NR3 por NXP Semiconductors e MRF8S9202NR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ Ativo
NXP Semiconductors
MRF8S9202NR3 MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP

MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP

MRF8S9202NR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF8S9102NR3 MRF8S9202NR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $24,10 $64,80
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Family MRF8S9102N / HV8 series —
Tipo de transistor N-Channel Lateral Enhancement-Mode MOSFET N-Channel Lateral MOSFET
Application RF Power Amplifier, W-CDMA base station —
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 920 MHz 920 MHz
Drain-Source Operating Voltage (VDS) 28 V (typical test condition) —
Drain-Source Breakdown Voltage (VDSS) 70 V (max) —
Average Output Power (POUT) 28 W —
Drain Current (ID) at bias 750 mA —
Power Gain (Gp) 23.1 dB —
Modulation Format Single W-CDMA (also Class AB/C capable) —
Encapsulamento OM-780-2 (3-pin ceramic, flange mount) —
Tipo de montagem Chassis / flange mount with bolt-down thermal pad Surface Mount
Contagem de pinos 3 —
Status RoHS [DATA_NEEDED: rohs compliance] Compliant
Operating Mode Class AB or Class C Class AB and Class C
Part Status — Active
Configuration — Single
Frequency Range — 920 MHz to 960 MHz
Output Power (W-CDMA Average) — 58 W
Power Gain (typ) — 19 dB at 920 MHz
Drain Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 1300 mA
Drain Current (operating) — 1.3 A
Min Drain-Source Breakdown Voltage — 70 V
Encapsulamento / Caixa — OM-780-2 (ceramic air-cavity)
Modulation Support — Single W-CDMA, CDMA, GSM/EDGE

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