RTAX2000DL-1CQ352V vs RTAX2000D-1CQ352V Comparação

Comparação detalhada lado a lado de RTAX2000DL-1CQ352V por Microchip Technology e RTAX2000D-1CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX2000DL-1CQ352V RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V ✓ Ativo
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Ativo

Comparação de especificações

Parâmetro RTAX2000DL-1CQ352V RTAX2000D-1CQ352V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $2.950,00 $3.950,00
Family RTAX-DSP (RTAX2000DL) —
Equivalent System Gates 2,000,000 (approx.) —
Logic Cells 29,568 29,568
CLBs 19,712 19,712
Core Supply Voltage 1.425 V to 1.575 V (nominal 1.5 V) 1.425 V to 1.575 V (nominal 1.5 V)
Technology Digital CMOS Digital CMOS, antifuse (nonvolatile)
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (RTAX-DSP) —
Configuration Live at power-up, no external boot memory Live at power-up, single-chip, no external configuration device
Speed Grade -1 -1
Encapsulamento CQ352 (352-pin ceramic QFP) CQFP-352 (CQ352), ceramic
Tipo de montagem Surface Mount Surface Mount
Application Domain Space-flight systems —
Special Features DSP multiply-accumulate blocks (DL variant) —
Status RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Temperatura de operação [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: Operating Temperature]
Embedded SRAM [DATA_NEEDED: Embedded SRAM capacity] —
Equivalent Gates — 2,000,000
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits with optional EDAC protection
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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