UCC21530DWKR vs SI8273AB-IM Comparação

Comparação detalhada lado a lado de UCC21530DWKR por Texas Instruments e SI8273AB-IM por Skyworks Solutions. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Texas Instruments
UCC21530DWKR UCC21530DWKR - 4A/6A Dual-Channel Isolated Gate Driver | TI

UCC21530DWKR - 4A/6A Dual-Channel Isolated Gate Driver | TI

UCC21530DWKR ✓ Ativo
Skyworks Solutions
SI8273AB-IM SI8273AB-IM - 4A ISOdriver Isolated Gate Driver | Skyworks

SI8273AB-IM - 4A ISOdriver Isolated Gate Driver | Skyworks

SI8273AB-IM ✓ Ativo

Comparação de especificações

Parâmetro UCC21530DWKR SI8273AB-IM
Marca Texas Instruments Skyworks Solutions
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,95 $1,62
Driver Configuration Half-Bridge (dual independent outputs) —
Number of Channels 2 2 (High-Side / Low-Side)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Voltage (RMS) 5.7 kVRMS (reinforced, per UL 1577) —
Common-Mode Transient Immunity (CMTI) >=125 V/ns (minimum) Industry-leading (per datasheet)
Channel-to-Channel Spacing 3.3 mm —
Maximum Switching Frequency 5 MHz —
VDD Supply Range (logic side) 3 V to 5.5 V —
VDDA / VDDB Range (drive side) 8 V to 18 V (up to 25 V per TI part details) —
Propagation Delay [DATA_NEEDED: propagation delay in ns] 60 ns (typical)
Dead-Time Control Programmable via DT pin resistor —
Pino de habilitação Yes (EN, active-high; pulls LOW to disable both outputs) —
Input Logic Compatibility CMOS / TTL —
Faixa de temperatura de operação -40C to +125C -40C to +125C
Encapsulamento 14-SOIC (DWK) with 3.3 mm channel spacing 14-pin LGA (5x5 mm)
Tipo de montagem Surface Mount Surface Mount
Approximate Datasheet Length 47 pages (per third-party datasheet archive) —
Status RoHS Compliant Compliant
Product Type — Isolated Gate Driver (ISOdriver)
Isolation Technology — Silicon RF capacitive isolation
Isolation Withstand Voltage — 2500 Vrms (per UL1577)
Peak Output Current — 4 A source/sink
Input Configuration — Single PWM or dual digital inputs (VIA, VIB)
Input Supply Voltage (VDD) — 2.5 V to 5.5 V
UVLO Threshold — 3 V (programmable on some variants)
Configuração de saída — Independent HS and LS drivers

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