UCC21550BDWR vs UCC21550ADWR Comparação
Comparação detalhada lado a lado de UCC21550BDWR por Texas Instruments e UCC21550ADWR por Texas Instruments. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AtivoTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ AtivoComparação de especificações
| Parâmetro | UCC21550BDWR | UCC21550ADWR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,88 | $1,19 |
| Configuração de saída | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DISABLE pin) |
| Junction Temperature Range | -40 C to +150 C | -40C to +150C |
| Encapsulamento | 16-SOIC (DW) | 16-SOIC (DW) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | Power MOSFET, SiC, GaN, IGBT |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Dead Time | — | Programmable |